MILSTD750 Search Results

TY 2016 thyristor

Abstract: Toshiba thyristors TOSHIBA Thyristor
Contextual Info: 5. R ELIA BILITY OF SEM ICONDUCTOR 5.1 to pro ducts are evaluated and when quality and reliability are confirm ed, next step o f the trial mass production proceeds. At the trial mass production step, stability of m anufacturing processes is evaluated p repo n­

ues704

Contextual Info: RECTIFIERS UES704 UES705 UES706 UES704HR UES705HR UES706HR High Efficiency, 20A FEATU RES DESCRIPTIO N • • • • • • The UES704 series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 KHz.

high temperature reverse bias

Abstract: METHOD-1032 1N6535 JAN
Contextual Info: SCREENING GUIDE FOR HIGH RELIABILITY APPLICATIONS The following screening guide for discretes and assemblies is suggested for high reliability applications, and can be adjusted or modified to suit your requirements. This is taken from Table IV in MIL-PRF-19500, JANTX screening.

6045pt

Abstract: MBR6050PT-60100PT PT-60 MBR60XXPT
Contextual Info: MBR6035PT - MBR60100PT CREAT BY ART Pb 60.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD RoHS COMPLIANCE Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

MARKING A1G

Abstract: marking code A1G
Contextual Info: UF4001 - UF4007 1.0AMP. Glass Passivated High Efficient Rectifiers DO-41/DO-204AL Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Glass passivated chip junction Low cost Ultrafast recovery time for high efficiency High efficiency, low VF

MBR40200

Abstract: MBR 40150 MBR40150 4045 pt
Contextual Info: MBR4035PT - MBR40200PT CREAT BY ART Pb 40.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD RoHS COMPLIANCE Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

MUR360S

Abstract: 320s
Contextual Info: MUR305S - MUR360S CREAT BY ART Pb RoHS 3.0 AMPS. Surface Mount Ultrafast Power Rectifiers SMC/DO-214AB COMPLIANCE Features — For surface mounted application — Glass passivated junction chip — Low profile package — Built-in strain relief — Qualified as per AEC-Q101

MBRF1535CT

Contextual Info: MBRF1535CT - MBRF15150CT CREAT BY ART 15.0 AMPS. Isolated Schottky Barrier Rectifiers ITO-220AB Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

3040PT

Abstract: SR3050PT-3060PT SR-3090 SR3090PT SR30100
Contextual Info: SR3020PT - SR30150PT CREAT BY ART 30.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD Pb RoHS COMPLIANCE Features — UL Recognized File # E-326243 — Dual rectifier construction, positive center-tap — Plastic package has Underwriters Laboratory Flammability Classifications 94V-0

TS4148C

Abstract: A12 smd
Contextual Info: TS4148C RCG 200mW High Speed SMD Switching Diode Small Signal Diode 0603 A B Features —Designed for mounting on small surface. —Extremely thin/leadless package C —High mounting capability,strong surage with stand, high reliability. D —Pb free version and RoHS compliant

Contextual Info: MBR545 5.0 AMPS. Schottky Barrier Rectifiers Voltage Range 45 Volts Current 5 Amperes TO-220A Features a a a a a a a a Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon rectifier, majority carrier conduction Low power loss, high efficiency

MBR10H100

Contextual Info: MBR1035 THRU MBR10H100 10.0 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 100 Volts Current 10.0 Amperes TO-220A Features .185 4.70 .175(4.44) Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction

953B

Abstract: marking code 953b 956B
Contextual Info: 1SMB5926 - 1SMB5956 CREAT BY ART Pb RoHS 3.0 Watts Surface Mount Silicon Zener Diodes SMB/DO-214AA COMPLIANCE Features — For surface mounted applications in order to optimize board space — Low profile package — Built-in strain relief — Glass passivated junction

A12 diode

Abstract: diode 0450
Contextual Info: TESDQ5V0ULC Ultra Low Capacitance ESD Protection Diode Small Signal Diode 0402 DFN1006 Features Cell Phone Handsets and Accessories Microprocessor based equipment Personal Digital Assisitants(PDA's) Notebooks,Desktops,and Servers Pb free version, RoHS compliant, and Halogen free

Contextual Info: TESDQ5V0 Bi-directional ESD Protection Diode Small Signal Diode DFN1006 0402 Features —Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) —Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) —100W Peak Pulse Power per Line (tp=8/20 s) —Protects one birectional I/O line

mcc 6v8c

Abstract: marking CODE MCC SMBJP6KE150 DEVICE MARKING CODE 150A marking code 150a 16A marking code DO214AA SMBJP6KE16A
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features For surface mount applicationsin in or der to optimize board space Available in both unidirectional and bidirectional construction

3060ct

Abstract: 30150CT 30100C 30100CT MBRF3090CT-30100CT
Contextual Info: MBRF3035CT - MBRF30150CT CREAT BY ART 30.0 AMPS. Isolated Schottky Barrier Rectifiers ITO-220AB Pb RoHS COMPLIANCE Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

47CA

Abstract: 1.5 33ca 440C 51a marking 350CA marking CODE 91A TP 170A 15CA diode 47c diode 6v8a
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414 1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com P6SMB SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

2n7612

Abstract: 4.5V to 100v input regulator
Contextual Info: PRELIMINARY PD-97178 2N7612M1 IRHLG77110 100V, Quad N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE MO-036AB TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHLG77110 100K Rads (Si) 0.22Ω IRHLG73110 300K Rads (Si) 0.22Ω

LTST-C190KSKT

Abstract: LTSTC190KSKT 859-LTST-C190KSKT
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * Meet ROHS, Green Product. * Extra thin 0.80H mm Chip LED * Ultra bright AlInGaP Chip LED. * Package In 8mm Tape On 7" Diameter Reels. * EIA STD package. * I.C. compatible. * Compatible With Automatic Placement Equipment.

HMB11GP

Abstract: HMB12GP HMB13GP
Contextual Info: HMB11GP CHENMKO ENTERPRISE CO.,LTD THRU MINIATURE GLASS PASSIVATED SINGLE-PHASE SURFACE MOUNT BRIDGE RECTIFIER VOLTAGE RANGE 50 - 200 Volts HMB13GP CURRENT 0.5 Ampere FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Contextual Info: 30KPA SERIES DATA SHEET TRANSIENT VOLTAGE SUPPRESSOR – 30KPA SERIES FEATURE — — — — — — — — Plastic package. Glass passivated junction. 30000W Peak Pulse Power capability on 10/1000µs waveform. Excellent clamping capability. Repetition rate duty cycle :0.05%.

Contextual Info: P6KE SERIES DATA SHEET TRANSIENT VOLTAGE SUPPRESSORS – P6KE SERIES FEATURE Plastic package. Glass passivated chip junction in DO-15 Package 600W peak pulse power capability on 10/1000 s waveform. Excellent clamping capability. Low zener impedance. Fast response time: typically less than 1.0ps from 0 Volts to BV min.

Contextual Info: SBT1560VS UlTRA LOW VF SCHOTTKY RECTIFIER VOLTAGE 60 Volt 15 Ampere CURRENT 1.0 25.4 MIN. FEATURES • Ultra low forward voltage drop, low power loss • High efficiency operation 0.052(1.3) 0.048(1.2) 0.360(9.1) 0.340(8.6) • Lead free in compliance with EU RoHS 2011/65/EU directive