MILITARY PART MARKING SYMBOLS JAN Search Results

DIODE 1N649

Abstract: diode 1N645 JANTX markings on diode marking 332 1N649 JANTX 1N647 military part marking symbols jan 1N647-1 JANTX 1N647-1 1N645-1 JANS
Contextual Info: MIL SPECS I C | 0 D D 0 1 2 S 0001574 4 | T-of-cy \ NOTICE I IOF VALIDATION ! INCH-POUND MIL-S-19500/240E NOTICE 1 24 August 1988 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, TYPES 1N645, 1N647, 1N649, JAN AND JANTX; 1N645-1, 1N647-1

military part marking symbols jan

Abstract: jan1n538 1n538 JAN1N540 1N538 JAN JAN-1N540M 1N538M in547 JAN-1N538 JAN-1N547M
Contextual Info: MIL SPECS iclooooias 0002300 L> f MIL-S-19500/2021 AMOEDMOrr 2 14 December 1964 supebsedS g D C K »T 1 3 December 1963 MILITARY SPECIFICATl« SEMICONDUCTOR DEVICES, DIODES, SILICCB, POWER BECTLFTEBS, TYPES JAN-1 N538, JAN-1#540 AMD JAI-1*547 This amendment forms a part of Military Specification MIL-S-19500/2C2A,

mc 4011

Abstract: working of 4011 IC 220L3 cd 4011 be ic 4016 military part marking symbols jan 1n251 mc 4016 B ic
Contextual Info: NIL SPECS IC|0DDD125 0002204 T | MIL-S-19500/188A AMENDMENT 1 20 September 1979 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE JAN-1N251 This amendment forms a part o f M ilita r y S p e c ific a tio n MIL-S-19500/188A, dated 9 October 1963, and i s approved fo r use by a ll Departments and

1N1149

Abstract: 1N1149 JAN 1N1147 1N1147 JAN
Contextual Info: INCH-POUND MIL-S-19500/254B 21 March 2005 SUPERSEDING MIL-S-19500/254A EL 6 February 1968 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, TYPES 1N1147 AND 1N1149, JAN Inactive for new design after 7 June 1999. This specification is approved for use by all Departments

CD74ACT86-EP

Contextual Info: CD54ACT86, CD74ACT86 QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES SCHS322 – JANUARY 2003 D D D D D D CD54ACT86 . . . F PACKAGE CD74ACT86 . . . E OR M PACKAGE TOP VIEW Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption

Contextual Info: SN74AHCT1G86 SINGLE 2-INPUT EXCLUSIVE-OR GATE SCLS324L – MARCH 1996 – REVISED JANUARY 2003 D D D D D D D DBV OR DCK PACKAGE TOP VIEW Operating Range of 4.5 V to 5.5 V Max tpd of 8 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V

Contextual Info: SN74AHCT1G86 SINGLE 2-INPUT EXCLUSIVE-OR GATE SCLS324L – MARCH 1996 – REVISED JANUARY 2003 D D D D D D D DBV OR DCK PACKAGE TOP VIEW Operating Range of 4.5 V to 5.5 V Max tpd of 8 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V

Contextual Info: 2N1483 – 2N1486 Qualified Levels: JAN and JANTX NPN Silicon Medium Power Transistor Available on commercial versions Qualified per MIL-PRF-19500/180 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. Important: For the latest information, visit our website http://www.microsemi.com.

JANKCAR2N7389

Abstract: 2N7426 IRHC7360SE JANKCAF2N7389 IRHC9Y130 JANKCAR2N7268 2n7391 2n7425 JANKCAR2N7261 2n7389
Contextual Info: INCH-POUND MIL-PRF-19500/657A 22 February 2000 SUPERSEDING MIL-PRF-19500/657 23 December 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N and P-CHANNEL, SILICON VARIOUS TYPES JANHC, AND JANKC This specification is approved for use by all Departments

Contextual Info: SN54AS756, SN74AS756, SN74AS757 OCTAL BUFFERS AND LINE DRIVERS WITH OPENĆCOLLECTOR OUTPUTS SDAS040B − DECEMBER 1983 − REVISED JANUARY 1995 SN54AS756 . . . J PACKAGE SN74AS756, SN74AS757 . . . DW OR N PACKAGE TOP VIEW Open-Collector Outputs Drive Bus Lines or

Contextual Info: SN54AS756, SN74AS756, SN74AS757 OCTAL BUFFERS AND LINE DRIVERS WITH OPENĆCOLLECTOR OUTPUTS SDAS040B − DECEMBER 1983 − REVISED JANUARY 1995 SN54AS756 . . . J PACKAGE SN74AS756, SN74AS757 . . . DW OR N PACKAGE TOP VIEW Open-Collector Outputs Drive Bus Lines or

4026 IC

Abstract: CI 4016 in276 1N276 IR411 ic 4081 ci 4081
Contextual Info: niL SPECS IC | G D D D 1 5 S □□57Bclb 1 | I INCH-PQ1JND~T MIL-S-19500/192B 6 October 1989 superseding-MIL-S-19500/192A 19 April 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N276, JAN, JANTX, ANO JANTXV This specification 1s approved for use by all Departments and

CD54ACT86F3A

Abstract: CD74ACT86-EP
Contextual Info: CD54ACT86, CD74ACT86 QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES SCHS322 – JANUARY 2003 D D D D D D CD54ACT86 . . . F PACKAGE CD74ACT86 . . . E OR M PACKAGE TOP VIEW Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption

jantx diodes

Abstract: MIL-STD-1241 1n6497 1N6503 1N6505 1N6504 574b 1N6499 JANTX 1N6498 1N6499
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 January 1999 MIL-PRF-19500/574B 30 October 1998 SUPERSEDING MIL-S-19500/574A USAF 1 December 1994 PERFORMANCE SPECIFICATION SHEET

m19500483

Abstract: 483-03 483-01
Contextual Info: 483-01 – 483-04 Available Qualified Level: JANTX 3 Phase 25 Amp Rectifier Bridge Qualified per MIL-PRF-19500/483 DESCRIPTION This series of high-current three-phase bridge rectifiers are constructed with hermetically sealed rectifiers built with the same design and construction techniques used in military

Contextual Info: SN54AS756, SN74AS756, SN74AS757 OCTAL BUFFERS AND LINE DRIVERS WITH OPENĆCOLLECTOR OUTPUTS SDAS040B − DECEMBER 1983 − REVISED JANUARY 1995 SN54AS756 . . . J PACKAGE SN74AS756, SN74AS757 . . . DW OR N PACKAGE TOP VIEW Open-Collector Outputs Drive Bus Lines or

Contextual Info: The documentation process conversion measures necessary to comply with this revision shall be completed by 17 January 1999 INCH-POUND MIL-PRF-19500/168E 17 October 1998 SUPERSEDING MIL-PRF-19500/168D 15 October 1997 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, THYRISTORS CONTROLLED RECTIFIERS , SILICON

Contextual Info: 1N7039CCT1 Silicon Dual Schottky Power Rectifier 35 Amp, 150 Volt Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/737 DESCRIPTION This Dual Schottky rectifier device is military qualified up to a JANTXV level for high-reliability

Contextual Info: 1N5186 thru 1N5188, 1N5190 Available on commercial versions Qualified Levels: JAN, JANTX and JANTXV VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS Qualified per MIL-PRF-19500/424 DESCRIPTION This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability

Contextual Info: 1N7039CCU1 Silicon Dual Schottky Power Rectifier 35 Amp, 150 Volt Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/737 DESCRIPTION This Dual Schottky rectifier device is military qualified up to a JANTXV level for high-reliability

Contextual Info: SN74AHCT1G86 SINGLE 2-INPUT EXCLUSIVE-OR GATE SCLS324L – MARCH 1996 – REVISED JANUARY 2003 D D D D D D D DBV OR DCK PACKAGE TOP VIEW Operating Range of 4.5 V to 5.5 V Max tpd of 8 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V

IRHC7260SE

Abstract: JANKCAR2N7389
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 April 2011. INCH-POUND MIL-PRF-19500/657B 26 January 2011 SUPERSEDING MIL-PRF-19500/657A 22 February 2000 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE,

s13001

Abstract: 11n120 IC 4011 pin DETAIL HA 4016 IC 4011 14 PIN 1N1202A 1N1204A 1N1206A 1N3671A 1N3673A
Contextual Info: NIL S P E C S I I I I GOO IC • 0 0 0 0 1 2 5 O O E T S T S The documentation and process conversion measures necessaryto comply with this revision shallbe completed by 2 January 1990_ I I I | 4 Ii n c h - p o u n d T MIL-S-19500/260D 21 April 1989 SUPERSEDING-MIL-S-19500/260C

1n5190

Contextual Info: 1N5186 thru 1N5188, 1N5190 Available on commercial versions Qualified Levels: JAN, JANTX and JANTXV VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS Qualified per MIL-PRF-19500/424 DESCRIPTION This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability