MIL-STD-883 RANDOM Search Results

hm 6164

Abstract: 65162 hm165162 harris HM1-65162 equivalent
Contextual Info: 33 HM-65162/883 2K x 8 Asynchronous CM OS S tatic RAM January 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random

Contextual Info: HM-65162/883 & W A « 2K x 8 Asynchronous CMOS St3tÌC RAM January 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random

Contextual Info: HM-6516/883 MARIRIS S E M I C O N D U C T O R 2K x 8 CMOS RAM January 1992 Features Description • This Circuit Is Processed In Accordance to Mil-Std-883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6516/883 is a CMOS 2048 x 8 Static Random Access Memory.

Contextual Info: Lattice pLSI 1016/883 programmable Large Scale Integration High-Density Programmable Logic Features Functional Block Diagram • PROGRAMMABLE HIGH-DENSITY LOGIC — — — — — MIL-STD-883 Version of the pLS11016 High-Speed Global Interconnects 32 I/O Pins, Four Dedicated Inputs

MIL-STD-883 Method 2019

Contextual Info: Quality Standards and Military Screening Amplifonix is qualified to support both MIL-STD-883 * screening as well as parts that conform to MIL-PRF-38534 Class H. All screening is performed on site, including Groups A, B, C and D. Environmental Screening Test

smd marking g23

Abstract: 5962-9084703MXA smd marking JD JD smd RAS 0910 g23 SMD Transistor marking g23 SMD SMJ44400 jdm 11
Contextual Info: DRAM SMJ44400 Austin Semiconductor, Inc. 1M x 4 DRAM PIN ASSIGNMENT Top View DYNAMIC RANDOM-ACCESS MEMORY 20-Pin DIP (JD) 20-Pin Flatpack (HR) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-90847 • MIL-STD-883 DQ1 DQ2 W\ RAS\ A9 A0 A1 A2 A3

g23 SMD Transistor

Abstract: smd marking JD SMJ44400
Contextual Info: DRAM SMJ44400 Austin Semiconductor, Inc. 1M x 4 DRAM PIN ASSIGNMENT Top View DYNAMIC RANDOM-ACCESS MEMORY 20-Pin DIP (JD) 20-Pin Flatpack (HR) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-90847 • MIL-STD-883 DQ1 DQ2 W\ RAS\ A9 A0 A1 A2 A3

SMD Transistor g25

Abstract: smd marking JD 21D0 g23 SMD Transistor SMJ44400
Contextual Info: DRAM SMJ44400 Austin Semiconductor, Inc. 1M x 4 DRAM PIN ASSIGNMENT Top View DYNAMIC RANDOM-ACCESS MEMORY 20-Pin DIP (JD) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS DQ1 DQ2 W\ RAS\ A9 A0 A1 A2 A3 Vcc • SMD 5962-90847 • MIL-STD-883 FEATURES • Organized 1,048,576 x 4

MT42C4256

Contextual Info: MT42C4256 883C 256K x 4 VRAM AUSTIN SEMICONDUCTOR, INC. Limited Supply - Consult Factory 256K x 4 DRAM WITH 512 x 4 SAM VRAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-89497 • MIL-STD-883 28-Pin DIP (400 MIL) FEATURES •

Z313

Contextual Info: 4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS040D - JANUARY 1991 - REVISED JUNE 1995 JD/JDB PACKAGES TOP VIEW * Processed to MIL-STD-883, Class B « Organization . . . 4194304 x 1 * Single 5-V Power Supply (±10% Tolerance) ! '* Performance Ranges:

SMJ44400

Abstract: smd marking JD 5962-9084703MXA
Contextual Info: DRAM SMJ44400 1M x 4 DRAM PIN ASSIGNMENT Top View DYNAMIC RANDOM-ACCESS MEMORY 20-Pin DIP (JD) 20-Pin Flatpack (HR) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-90847 • MIL-STD-883 DQ1 DQ2 W\ RAS\ A9 A0 A1 A2 A3 Vcc FEATURES • Organized 1,048,576 x 4

smd marking JD

Contextual Info: DRAM SMJ44400 1M x 4 DRAM PIN ASSIGNMENT Top View DYNAMIC RANDOM-ACCESS MEMORY 20-Pin DIP (JD) 20-Pin Flatpack (HR) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-90847 • MIL-STD-883 DQ1 DQ2 W\ RAS\ A9 A0 A1 A2 A3 Vcc FEATURES • Organized 1,048,576 x 4

Contextual Info: SMJ4C1024 1048576-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS023D - DECEMBER 1BBS - REVISED JUNE 1995 Organization . . . 1048576 x 1 Processed to MIL-STD-883, Class B Single 5-V Supply 10% Tolerance Performance Ranges: ACCESS ACCESS ACCESS TIME TIME TIME '4C1024-80

6516

Contextual Info: m HM-6516/883 HARRIS S E M I C O N D U C T O R 2K x 8 CMOS RAM January 1992 Description Features • This Circuit Is Processed In Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power Standby. 275^W Max.

SMJ27C010A

Abstract: UVEPROM SMD MARKING CODE A12 SMD MARKING CODE A10 smd code a12 AS27C010A 5962-8961419QXA SMJ27C010A-12JM marking code a8 SMD Marking Code SMD A12
Contextual Info: UVEPROM SMJ27C010A AS27C010A 1 MEG UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 32-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-89614 • MIL-STD-883 VPP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1

432T

Contextual Info: SMJ4C1024 1048576-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS023E - DECEMBER 1988 - REVISED MARCH 1996 Organization . . . 1048576 x 1 HJ PACKAGE TOP VIEW Processed to MIL-STD-883, Class B — 1 w E 2 RASH 3 Performance Ranges: ACCESS ACCESS ACCESS TIME TIME TIME

4C1024-15

Abstract: 4c1024 ram 4C1024
Contextual Info: SMJ4C1024 1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY 8QMSH83E - DECEMBER 1968 - REVISED MARCH 1886 Organization. . . 1048576 x 1-Blt HJ PACKAGE TOP VIEW Processed to MIL-STD-883, Class B Single 5-V Supply (10% Tolerance) Performance Ranges: ACCESS ACCESS ACCESS

Contextual Info: SMJ44400 1048 576 BY 4-BIT DYNAMIC RANDOM-ACCiSS MEMORY _SGMS0A1D - JANUARY 1891 - REVISED JUNE 1985 • • Processed to MIL-STD-883, Class B Organization . . . 1 048 576 x 4 Single 5-V Power Supply ±10% Tolerance Performance Ranges: ACCESS ACCESS ACCESS

27c256-20 TEXAS INSTRUMENTS

Abstract: 27C256 27c256-15 TEXAS INSTRUMENTS 27C256-15 27C256-17 27C256-25 77261 fd179x ti 27c256 27C256-20
Contextual Info: SMJ27C256 262144-BIT UV-ERASABLE PROGRAMMABLE READ-ONLY MEMORY ^ _ SGMSOQ5E - MAY 1986 - REVISED JUNE 1995 • Organization . . . 32K x 8 J PACKAGE • MIL-STD-883 Class B High-Reliability Processing TOP VIEW 28]VCC Vpp[ 1 27]A14

AS4C4256

Abstract: MAS 10 RCD MT42C4256 mt42c4256 -8
Contextual Info: AS42C4256 883C 256K x 4 VRAM AUSTIN SEMICONDUCTOR, INC. VRAM 256K x 4 DRAM WITH 512 x 4 SAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • MIL-STD-883 28-Pin DIP (400 MIL) FEATURES • • • • • • • • • • Industry standard pinout, timing and functions

smd transistor device marking p18

Abstract: 25 smd fuse marking code 25NSG vq80 42mx16 CQ208 A42MX36 marking
Contextual Info: Revision 11 40MX and 42MX FPGA Families Features HiRel Features High Capacity • Commercial, Industrial, Automotive, Temperature Plastic Packages • Commercial, Military Temperature, and MIL-STD-883 Ceramic Packages • Single-Chip ASIC Alternative • 3,000 to 54,000 System Gates

Contextual Info: Revision 12 40MX and 42MX FPGA Families Features HiRel Features High Capacity • Commercial, Industrial, Automotive, Temperature Plastic Packages • Commercial, Military Temperature, and MIL-STD-883 Ceramic Packages • Single-Chip ASIC Alternative • 3,000 to 54,000 System Gates

TS-2321

Contextual Info: SMJ44400 1 048 576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS041D - JANUARY 1991 - REVISED JUNE 1995 Processed to MIL-STD-883, Class B Organization. . . 1 048 576 x 4 Single 5-V Power Supply ±10% Tolerance Performance Ranges: A CCESS ACCESS A CCESS

31D0

Contextual Info: SMJ44100 4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS040D – JANUARY 1991 – REVISED JUNE 1995 D D D D Processed to MIL-STD-883, Class B Organization . . . 4 194304 x 1 Single 5-V Power Supply ±10% Tolerance Performance Ranges: SMJ44100-80