MIL GRADE TRANSISTOR ARRAY DATA SHEET Search Results

4 npn transistor ic 14pin

Abstract: MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA101B: Superior thermal dissipation due to studded 14-pin ceramic package

4 npn transistor ic 14pin

Abstract: lowest noise audio NPN transistor C10535E PA104 MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • 9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA104B: Studded ceramic package provides superior thermal dissipation

4 npn transistor ic 14pin

Abstract: 8 npn transistor ic 14pin C10535E UPA102G
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package

4 npn transistor ic 14pin

Abstract: C10535E PA103 lowest noise audio NPN transistor
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS:

4 npn transistor ic 14pin

Abstract: PA1032 8 npn transistor ic 14pin
Contextual Info: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIM ENSIONS Units in mm FEATURES • FIVE M O NO LITHIC 9 GHz fr T R A NSISTO R S: ¿fPA103 B Two of these use a common em itter pin and can be used as differential am plifiers

u101b

Contextual Info: DATA SHEET COMPOUND TRANSISTOR _ j f P A 101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS Units in mm • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)

ua104

Contextual Info: DATA SHEET COMPOUND TRANSISTOR _jfPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • • • OUTLINE DIMENSIONS Units in mm 9 GHz C O N FIG U RA BLE TRA NSISTO R BASED O R/NOR CIRCUITRY OUTSTANDING Kif e LINEARITY /iPA1 04B TW O PACKAGE O PTIO NS:

Contextual Info: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIMENSIONS Units in mm FEATURES • TW O BUILT-IN DIFFER EN TIA L AM PLIFIER CIRCUITS: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR _jfPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIMENSIONS Units in mm FEATURES • FIVE M O NO LITHIC 9 GHz fr T R A NSISTO R S: /iPA103 B Two of these use a common em itter pin and can be used as differential am plifiers

smd transistor HX

Abstract: TRANSISTOR SMD MARKING CODE TK TRANSISTOR SMD MARKING CODE MP smd transistor HX 45 cdp68hc68 hc221 TRANSISTOR SMD MARKING CODE WM intersil standard part marking HIP SMD TRANSISTOR MARKING by 4p TRANSISTOR SMD MARKING CODES
Contextual Info: Ordering Nomenclature Guides 2 2-3 Elantec TYPES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-4 5962 SMD/DSCC - QML TYPES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

IEI-1207

Abstract: PA1602 IC-3370 iso 1207 16PIN IC 3370
Contextual Info: DATA SHEET NEC COMPOUND äm m mFIELD m EFFECT POWER TRANSISTOR r „PAI 602 MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The ¡iPA1602 is Monolithic N-channel Power MOS FET Array that built CONNECTION DIAGRAM in 7 circuits designed for LED, Relay, Thermal Head, and so on.

MICRO-X TRANSISTOR MARK Q6

Abstract: C10535E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

IC-3368

Abstract: smd transistor 9j UPA1600GS iso 1207 PA-1600 20PIN MIL GRADE TRANSISTOR ARRAY PA1600 SMD transistor 6J U
Contextual Info: DATA SHEET NEC FIELD EFFECT POWER TRANSISTOR i COMPOUND — ¿¿PA1600 r MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The juPA1600 is M onolithic N-channel Pow er M O S FET A rray that built CONNECTION DIAGRAM in 8 circuits and Gate Protection Diode designed for LED, Relay,

transistor smd za

Abstract: smd transistor HX smd transistor HX 45 transistor smd xc transistor smd xb smd diode code T7 INTERSIL CROSS REFERENCE clocks ceramic pin grid array CPGA solder wire HMP CA3260
Contextual Info: Ordering Nomenclature I NTERSIL N OMENCLATURE GUIDE Intersil Nomenclatures ISL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 EL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

transistor smd za 28

Abstract: transistor smd za solder wire HMP 6 ld SOT-23 CA3260 nomenclatures CD4000 CDP65C51 X40015 transistor ZA 16
Contextual Info: Ordering Nomenclature 18 2006 P RODUCT S ELECTION GUIDE Intersil Nomenclatures ISL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18-2 EL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C10535E

Abstract: PA104
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

14pin npn transistor

Abstract: C10535E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

sot 23 code 27A

Abstract: cd4000 cmos TEPQFN CERAMIC LEADLESS CHIP CARRIER CLCC intersil cdp65C51 22-16 diode smd
Contextual Info: Ordering Nomenclature 22 2005 P RODUCT S ELECTION GUIDE Intersil Nomenclatures ISL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22-2 EL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C10535E

Abstract: PA103
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

mpa1601

Abstract: PA1601 IEI-1207 uPA1601GS transistor SMD 601 IEI-1213 Ua1601 UPA1601 16PIN NEC 1601 fet
Contextual Info: DATA SHEET NEC -Ä - V COMPOUND FIELD EFFECT POWER TRANSISTOR „PA1601 MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The ¿/PA1601 is M o n o lith ic N-channel Power MOS FET A rray th a t b u ilt in 7 circu its and resistance designed fo r LED, Relay, Therm al Head,

transistor A6I

Contextual Info: MHS electronic June 1992 HM 65262 HI-REL DATA SHEET_ 16 k x 1 VERY LOW POWER CMOS SRAM FEATURES ACCESS TIME : 70/85 ns . TTL COMPATIBLE INPUTS AND OUTPUTS VERY LOW POWER CONSUMPTION ACTIVE :1 10 mW typ STANDBY : 2.0 uW (typ) DATA RETENTION : 0.8 uW (typ)

smd transistor HX

Abstract: Mil JAN jm38510 Cross Reference CERAMIC LEADLESS CHIP CARRIER CLCC 28 jM38510 cross index ceramic pin grid array CPGA SmD TRANSISTOR SP cdp68hc68 CERAMIC LEADLESS CHIP CARRIER dsp radiation hard smd transistor HX 45
Contextual Info: Ordering Information 14 PRODUCT TREES ANALOG Device Category Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14-2 Ordering Nomenclature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

nec a1640

Abstract: transistor a1640 IC-3373 smd transistor yb a1640 IEI-1213 IPA1640GS MEI-1202 DD 127 transistor
Contextual Info: DATA SHEET nec Æmsmrnm COMPOUND FIELD EFFECT POWER TRANSISTOR r ßPM 640 MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The /¿PA1640 is M onolithic N-channel Power M O S FET A rray that built CONNECTION DIAGRAM in 8 circuits w ith 2 A N D GATE. In groups of 4 circuits and they each have ENABLE term inal.

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of