MICRON MT5C640 Search Results

chn 442

Abstract: chn 437 chn 439 chn 436 lz smd marking
Contextual Info: MICRON TE CHN OLOGY INC 3.7E- D • blllSMi 0001530 *} MICRON ■ MT5C6408 8830 t|CHt*MCtV MC MILITARY SRAM 8K X 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT (Top View • SMD 5962-85525, -89691 • JAN M38510/292 « RAD-tolerant (consult factory)

smd transistor marking A13C

Abstract: smd transistor A6t 12 smd transistor A6t A6T TRANSISTOR A6t smd a6t smd transistor smd transistor wc smd transistor A6t 50 C17E smd transistor wc dc
Contextual Info: MICRON TECHNOLOGY INC 17E J> • blllSMT 0001ÖS2 5 MICRON MT5C6404 883C MILITARY SRAM 16K X 4 SRAM 'T - M W - Z V i o AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86859, -89629 • JAN (consult factory for reference number)

smd transistor A6t

Abstract: A4U marking transistor A6t smd Transistor A6T TRANSISTOR smd transistor A4U smd transistor A6t 14 SMD TRANSISTOR MARKING A1 T46 smd transistor A6t 50 transistor A6t 45 smd transistor marking a7*c
Contextual Info: 1?E D MICRON TECHNOLOGY INC b l l l S 1^ MICRON « OOOiaiH b MT5C6401 883C HlhN-XCV'.V ISC MILITARY SRAM 64Kx1 SRAM -OS AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86105 • JAN M38510/292 « RAD-tolerance (consult factory)

Contextual Info: MICRON TECHNOLOGY INC 17E5 • tÌlÌS4"Ì 0001630 4 ■ MICRON i ■ MT5C6405 883C I d h i r t ' l . ' B*- 16K x 4 SRAM MILITARY SRAM WITH OUTPUT ENABLE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD (consult factory for reference number)

JMicron

Contextual Info: MICRON S E M I C O N D U C T O R INC b?E D WÊ b 1 1 1 5 4 T DDG'îETB 77G H I M R N MICRON B 16K SK.'i'ONOUCTOR l'JC MT5C6405 X 4 SRAM 16K x 4 SRAM SRAM FEATURES • High speed: 9 ,1 0 ,1 2 ,1 5 ,2 0 and 25ns • High-performance, low-power, CMOS double-metal

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

Contextual Info: MICRON TECHNOLOGY INC S5E D • blllSHT GG0334G 7bl ■ MRN piCZRON 64K MT5C6401 X 1 SRAM - 'T 4 C 7 - 2 .V O S T SRAM 64K X 1 SRAM • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply

Contextual Info: MICRON TECHNOLOGY INC c SSE ]> blllSM'ì GOOSbQS 1^4 B U R N MT5C6404 883C 16K X 4 SRAM IC Z R Q N 16K X 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86859, -89692 • MIL-STD-883, Class B • Radiation tolerant (consult factory)

AAA1M304

Abstract: tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A
Contextual Info: Cross Reference & Fast Static RAM Vendor Cypress Fujitsu Hitachi IDT ISSI Micron Mltsubish P/N Alliance P/N Description P/N Alliance P/N CY7C106 AS7C1028 256K x 4 MCM32A32 AS7M32D128 128K module CY7C185 AS7C164 8Kx8 MCM32A64 AS7M32D256 256K module CY7C188

Contextual Info: IT/AT/XT SPECIFICATION 64K SRAM FAMILY MICRON ABSOLUTE MAXIMUM RATINGS* ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-40°C < TA < 85°C; -40°C < TA < 125°C; -55°C < TA < 125°C; Vcc = 5V ±10% DESCRIPTION CONDITIONS SYMBOL MIN

Contextual Info: MICRON TECHNOLOGY INC 55E ] |v/ i i c : i = i o n SRAM • blllSHT 0003308 b 3 T * M R N MT5C6405 16K X 4 SRAM ' l - ' M L ' 77.-1 O 16K x 4 SRAM FEATURES • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

5C6408

Abstract: 1293-D
Contextual Info: OBSOLETE 8/31/94 MICRON I MT5C6408 8K x 8 SRAM SEMICONDUCTOR, INC. SRAM 8K x 8 SRAM FEATURES PIN ASSIGNMENT Top View • H igh speed: 9 ,1 0 ,1 2 ,1 5 ,2 0 and 25ns • H igh-perform ance, low -pow er, CM OS double-m etal process • Single +5V +10% pow er supply

aa ssr hen ev

Abstract: 1293-D 5C6401
Contextual Info: OBSOLETE 8/31/94 MICRON I MT5C6401 64K x 1 SRAM SEMICONDUCTOR, INC. SRAM 64K x 1 SRAM FEATURES PIN ASSIGNMENT Top View • H igh speed: 9 ,1 0 ,1 2 ,1 5 ,2 0 and 25ns • H igh-perform ance, low -pow er, CM OS double-m etal process • Single +5V +10% pow er supply

Contextual Info: MICRON TECHNOLOGY INC SSE ]> • b l l l S M T GQQSb4S Ö7Ü « f l R N MT5C6408 883C 8K X 8 SRAM I^ IC R Ü N . *—T"- Li i_-7 1 _1 " MILITARY SRAM 8K X 8 SRAM • • • • PIN ASSIGNMENT Top View) SMD 5962-38294, Class M JAN 5962-38294, Class B

Contextual Info: MICRON SEMICONDUCTOR INC L7E » • 000^340 IOS ■ MT5C6408 8K X 8 SRAM l^ iic n o N SRAM 8K X 8 SRAM • High speed: 9 ,1 0 ,1 2 ,1 5 ,2 0 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V +10% power supply • Easy memory expansion with CE1, CE2 and OE

Contextual Info: MICRON TECHNOLOGY INC SSE ]> b i l l 5 4 e! 0 0 0 3 3 0 0 |v iia = O N 16K SRAM 34Ö MT5C6404 X 4 SRAM 16K X 4 SRAM • High speed: 8’, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE option

micron MT5C640

Contextual Info: MICRON T E C H N O L O G Y M I C R O INC S5E D billig ÜODSSfll TEO • URN MT5C6401 883C 64K X 1 SRAM N MILITARY SRAM 64K X 1 SRAM PIN A SSIG N M E N T Top View SMD 5962-86015 JAN M38510,292 MIL-STD-883, Class B Radiation tolerant (consult factory) 22-Pin DIP

Contextual Info: MICRON TECHNOLOGY INC 3flE » ».»m u • b ill 5 ^ -Ü ' ? "Al LI QDOSRST O BiflRN '¿ 'i U Ü S REPLACES; MT66C3216 16Kx 32 SRAM SRAM MODULE FEATURES PIN ASSIGNMENT (Top View) High speed: 15ns, 20ns, 25ns, 30ns, 35ns and 45ns High-performance, low-power, CMOS process

Contextual Info: MICRON T E C H N O L O G Y INC SSE D • blllSMT □ 77T ■ URN MT8S1632 16K X 32 SRAM MODULE M IC R O N SRAM MODULE 16Kx 32 SRAM FEATURES • High speed: 10*, 15,20,25 and 35ns • High-performance, low-power, CMOS double-metal process _ • Single +5V ±10% power supply

MT5C6408

Contextual Info: AUSTIN S E M I C O N D U C T O R INC bOE ]> • T Ü U E 1 1 ? Ü D D D 3 0 2 ASM H A U S T MT5C6408 DIE 8K X 8 SRAM MICRON T - 4 b - 2 .S - ß _ MILITARY SRAM DIE 8K X 8 SRAM FEATURES • High speed: 1 2 ,15,20,25 and 35ns • High-performance, low-power, CMOS double-metal

Contextual Info: MICRON SEM ICONDUCTOR INC b?E D • blllSHT OOG'ìbHS 720 B U R N I^IIC R O N 16K SRAM MODULE X MT8S1632 32 SRAM MODULE 16Kx 32 SRAM FEATURES • High speed: 10*, 15,20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply

5C6401

Contextual Info: MICRON SEMICONDUCTOR INC b?E D • b!1154T DDDTBlfl flflfi B M R N unCRCHSI c^ MT,5g640l 64K X 1 SRAM SRAM 64K X 1 SRAM PIN ASSIGNMENT Top View • High speed: 9,10,1 2 ,1 5 , 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V +10% pow er supply

BTM marking

Contextual Info: MICRON SEMICONDUCTOR INC M • b7E » b i l l SH <3 []DDR2[,4 7bfi BIMRN IC R O N ,. 16K “ T,5 “ X « 4 SRAM 16K X 4 SRAM SRAM • High speed: 9 ,1 0 ,1 2 ,1 5 , 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply