MICRON MT42C Search Results

Contextual Info: 1 '- MICRON TECHNOLOGY INC 17E D • blllSMT 000177b E ■ ' MICRON ■ MT42C4064 883C TECHMOCOGY INC ■ T - H t- z v n MILITARY VRAM 64K X 4 DRAM with 256 X 4 SAM ! AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SM D 5962-89952 •

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

micron DRAM

Contextual Info: PRELIMINARY MT42C8255 256K X 8 VRAM MICRON 256K x 8 DRAM WITH 512 x 8 SAM VRAM FEATURES • • • • • • PIN ASSIGNMENT Top View Industry standard pinout, timing, and functions High-performance, CMOS silicon-gate process Single +5V ±10% power supply

Contextual Info: MICRON MT42C8127 VRAM 128Kx8 DRAM WITH 256 X 8 SAM • • • • • • • • • • • Industry standard pinout, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply Inputs and outputs are fully TTL and CMOS

Contextual Info: PRELIMINARY MICRON MT42C4256 883C AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-89497, Class M • JAN 5962-89497, Class B • MIL-STD-883, Class B 28L/400 CDIP SC [ 1 SDQ1 [ 2 FEATURES • • • • • • • • • •

Contextual Info: MICRON TECHNOL OGY INC 17E D biiisMT aooiôoa t • ADVANCE RON MT42C4256 883C MILITARY VRAM 256K X 4 DRAM with 512 X 4 SAM FEATURES • • • • Industry standard pin-out, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply

MT42C812

Contextual Info: MT42C8128 128K X 8 VRAM [MICRON VRAM 128Kx8 DRAM WITH 256 X 8 SAM FEATURES • • • • • • • PIN ASSIGNMENT Top View 40-Pin SOJ (Q-6) SPECIAL FUNCTIONS • • • • • • JEDEC Standard Function set PERSISTENT MASKED WRITE SPLIT READ TRANSFER

Contextual Info: PRELIMINARY MICRON MT42C4255 883C AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SM D 5962-89497, C lass M • JA N 5962-89497, Class B • M IL-STD -883, Class B 28L/400 CDIP SCI 1 28 1Vss FEATURES SDQ11 2 27 ISDQ4 SDQ2 [ 3 26 ISDQ3 •

Contextual Info: JM 2 8 W9i MICRON • MT42C4255 IIC H N O K X .Y INC VRAM 256K X 4 DRAM with 512 X 4 SAM FEATURES • • • • • • • • • • • Industry standard pin out, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

MT42C8128-12

Abstract: WCs MARKING vram dual port MT42C8128 MT42C812
Contextual Info: MICRON TECHNOLOGY INC SSE D • 1311134=] 00DS2SS 33*1 «FIRN MT42C8128 1 2 8 K x 8 VRAM M IC R O N ■ li CHNUIOUY l.'J. VRAM 128Kx8 DRAM WITH 256 X 8 SAM FEATURES • • • • • • • PIN ASSIGNMENT Top View 40-Pin SOJ (Q-6) SPECIAL FUNCTIONS •

mt42c4256

Abstract: T42C4256
Contextual Info: MICRO N T E C H N O L O G Y INC SSE » • b l l l S 4 1 00 05 10 7 MICRON I v VRAM 2 5 - - T 6 71S ■ MRN MT42C4256 K ' a x V 4 <0 ' 2 R A M 3 256K X 4 DRAM WITH 512x4 SAM FEATURES

Contextual Info: MICRON TECHNOLOGY INC SSE D b i l l 5 ^ DGD5 223 Sflb • URN SUPERSEDED BY MT42C8128 MT42C8127 128K x 8 VRAM M IC R O N B TECHNOLOGY. INC. T .% -rb -i£> _ VRAM 128Kx8 DRAM WITH 256 X 8 SAM FEATURES • • • • • • • • PIN ASSIGNMENT Top View

SDQ11

Abstract: vram dual port 256K X 16 MULTIPORT VIDEO RAM
Contextual Info: ADVANCE MT42C256K16A1 256K x 16 VRAM b l l l S M I D 0 D S 33 7 TS1 URN M IC R O N SSE D MICRON T E C H N O L O G Y INC VRAM 256Kx 16 DRAM WITH 512x16 SAM - 7 - 0 FEATURES Industry standard pinout, timing, and functions

Contextual Info: .¡AN a a ¡991 MICRON I M T42C8127 KCMHOIOCT ML 128K x 8 DRAM with 256 x 8 SAM VRAM FEATURES • • • • • • • • • • • Industry standard pin out, timing and functions High performance CMOS silicon gate process Single+5V ±10% power supply

MT42C4256Z

Contextual Info: l i f- V nib MICRON • 512K X MT20D51240 40 DRAM M O DULE 512K X 40 DRAM FAST PAGE MODE MT20D51240 LOW POWER, EXTENDED REFRESH (MT20D51240 L) FEATURES • • • • • • • • • 72-pin single-in-line package High-performance, CMOS silicon-gate process.

sc 8256

Abstract: Harris+8256
Contextual Info: M T42C 8256 256K X 8 VRAM MICRON 256K x 8 DRAM WITH 512 X 8 SAM VRAM PIN ASSIGNMENT Top View • Industry-standard pinout, tim ing and functions • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply (consult factory regarding 3.3V operation)

MAS 10 RCD

Abstract: marking CODE 7Ls Model MAS 10 RCD marking 7Ls W42C MT42C4064 MT4C4256 circuit diagram of o general split ac
Contextual Info: .¡AN a a ¡991 MICRON • M T42C8127 I t CMHOt OCT ML 128K x8 DRAM with 256 x 8 SAM VRAM FEATURES • • • • • • • • • • • Industry standard pin out, timing and functions High performance CMOS silicon gate process Single+5V ±10% power supply

MT42C4256

Abstract: micron DRAM
Contextual Info: MT42C4256 256K X 4 VRAM MICRON VRAM 256K X 4 DRAM WITH 512x4 SAM • Industry-standard pinout, tim ing and functions • High-perform ance, CM OS silicon-gate process • Single +5V ±10% pow er supply PIN ASSIGNMENT (Top View • In p u ts a n d o u tp u t s a r e fu lly l l ' L c o m p a tib le

64kx4 DRAM

Abstract: marking WMM IC-012 MT42C4064 T-46 00024B1 TS PQ4 24
Contextual Info: MICRON TECHNOLOGY INC 3ÔE D . li^ .i m blllSM^ 000247b b IMRN r~EV ¿ -2 3 - 3 ? n if i» g is is g l ¿ •ù -i 64Kx4 DRAM WITH 256 X 4 SAM VRAM • • • • Industry standard pinout, tim ing and functions H igh performance CMOS silicon gate process

Contextual Info: MICRON TECHNOLOGY INC 3ÖE D blllSHI G0G2S72 2 IMRN T -H & -2 Z -3 7 128Kx8 DRAM WITH 256 X 8 SAM VRAM • • • • • • • • • • • Industry standard pinout, tim ing and functions H igh perform ance CMOS silicon gate process Single +5V ±10% pow er supply

Micron MT42C

Contextual Info: PRELIMINARY M T42C8255 256KX 8 VRAM MICRON I n'—r ^*rr'y VRAM 256K x 8 DRAM WITH 512x8 SAM FEATURES • • • 40-Pin SOJ Q-6 Vec C 1 SC [ 2 SO I [ 3 S02 ( 4 SOS [ 5 S0 4 [ 6 TRiOE [ 7 • NONPERSISTENT M ASKED WRITE • BLOCK WRITE • SPLIT READ TRANSFER

Contextual Info: nllifriitr i~~*'TíiniimL—"-^ír niriaittT MICRON TECHNOLOGY INC 3fiE ]> • b l l l S M 6} DQQ5b44 1 « M R N PRELIMINARY TRIPLE PORT DRAM 256K X 4 DRAM WITH DUAL 512x4 SAMS • • • • • • • • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data access ports

Altra SAM

Abstract: SF 338 cwo JAGR
Contextual Info: MICRON TECHNOLOGY INC IME D t l l l S M I DQDllfl? S PRELIM IN A R Y T -% -2 3 -3 1 VRAM 128K X 8 DRAM with 256 X 8 SAM FEATURES • • • • • • • PIN ASSIGNMENT Top View Industry standard pin-out tim ing, an d functions H igh perform ance CMOS silicon gate process