MICRO TRANSISTOR 117 Search Results

"dual TRANSISTORs" pnp npn

Abstract: dual npn MLP832 ZXTDE4M832 ZXTDE4M832TA ZXTDE4M832TC power ic 5v 1A 034
Contextual Info: ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,

Transistor SSI 5504 175

Abstract: transistor b 1238 SSI 5504 175 0507 transistor 0235S2 BFP91A transistor d 1663
Contextual Info: Philips Semiconductors Product specification NPN 6 GHz wideband transistor philips international DESCRIPTION BFP91A SbE ]> 711002b G0453bb bG4 PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT 173X micro-stripline envelopes. It features

BFQ23C

Abstract: BFP91A t-31-21 537D UBB843 BFP91A NPN PHILIPS SOT173
Contextual Info: Philips Semiconductors Product specification NPN 6 GHz wideband transistor philips international DESCRIPTION BFP91A SbE ]> 711002b G0453bb bG4 PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT 173X micro-stripline envelopes. It features

pnp npn dual emitter connected

Abstract: ZETEX complementary transistor PRODUCT LINE design ideas MARKING 91A NPN MARKING 91A NPN transistor Surface mount NPN/PNP complementary transistor MLP832 TS16949 ZXTD4591AM832 ZXTD4591AM832TA
Contextual Info: ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A Description Packaged in the 3mm x 2mm MLP Micro Leaded

MLP322

Abstract: ZXT4M322 ZXTD4M322TA ZXTD4M322TC
Contextual Info: ZXT4M322 MPPSTM Miniature Package Power Solutions 70V PNP LOW SATURATION TRANSISTOR SUMMARY PNP— VCEO= -70V; RSAT = 117m ; IC= -2.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline, this new 4th generation low saturation PNP transistor offers extremely low on state

Contextual Info: Philips Sem iconductors bb53T31 0031477 00T tM APX Product specification NPN 6 GHz wideband transistor BFP91A N AMER PHILIPS/DISCRETE DESCRIPTION bRE D PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT173X micro-stripline envelopes. It features

TRANSISTOR c 5578 B

Abstract: 603 transistor npn transistor 3bn TRANSISTOR C 4460 AG TRANSISTOR BFP90A 1702 NPN transistor ic 7818 npn transistor dc 558 transistor 3568
Contextual Info: Philips Semiconductors Product specification -p3 ~l 7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE I • BFP90A 711062b 00KS3SS 538 H P H I N PINNING NPN transistor in hermetically sealed, sub-miniature SOT173 and SOT173X micro-stripline envelopes. It is

TRANSISTOR c 5578 B

Abstract: 603 transistor npn
Contextual Info: PhHjP^emjconductor^^ _ bbSBTBl 0 0 3 1 4 bT T3 E • A P X ^Productspecification NPN 5 GHz wideband transistor — DESCRIPTION BFP90A H AriER PHILIPS/DISCRETE blE ] PINNING NPN transistor in hermetically sealed, sub-miniature SOT173and SOT173X micro-stripline envelopes. It is

Contextual Info: OBSOLETE - PLEASE USE ZXTP722MA ZXT4M322 MPPSTM Miniature Package Power Solutions 70V PNP LOW SATURATION TRANSISTOR SUMMARY PNP— VCEO= -70V; RSAT = 117m ; IC= -2.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline,

AT-42035

Abstract: AT-42035G S21E
Contextual Info: AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago’s AT-42035 is a general purpose NPN bipolar transistor that offers excellent high ­frequency performance. The AT‑42035 is housed in a cost effective surface mount 100 mil micro-X

AT-42035

Abstract: AT-42035G
Contextual Info: AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42035 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42035 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron

1A10A

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTP722MA ZXT4M322 MPPSTM Miniature Package Power Solutions 70V PNP LOW SATURATION TRANSISTOR SUMMARY PNP— VCEO= -70V; RSAT = 117m ; IC= -2.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline,

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTD720MC ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package

MGF4963BL

Abstract: HEMT marking K GD-32 low noise Micro-X marking "K" MGF4963B
Contextual Info: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)

1 928 405 766

Abstract: GD-32 rogers 4403
Contextual Info: < Low Noise GaAs HEMT > MGF4941AL Micro-X type plastic package DESCRIPTION The MGF4941AL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.)

BA 5982

Abstract: 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 35 MICRO-X

Contextual Info: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTN620MA ZXTEM322 MPPSTM Miniature Package Power Solutions 80V NPN LOW SATURATION TRANSISTOR SUMMARY NPN —- VCEO= 80V; RSAT = 68m ; IC= 3.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package

Contextual Info: MICRO ELECTRONICS MIE LT» 1,0*11700 D 0000=10=1 3 HMEHK MEL709D NPN PLANAR PHOTO-TRANSISTOR The MEL709D Is silicon phototransistor with external base connection and built in a standard T-l 3/4 5mm0 light rejective filter epoxy package. This device is suitable for use in a light

Contextual Info: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 36 micro-X Package Features Description • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor

gaas fet micro-X Package

Abstract: ATF-26836 ATF-26836-STR ATF-26836-TR1 oscillator 77 GHZ atf26836tr1 ATF26836-STR
Contextual Info: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 36 micro-X Package Features Description • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor

log sheet air conditioning

Abstract: MLP832 ZXTD3M832 ZXTD3M832TA ZXTD3M832TC
Contextual Info: ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer

1128 marking

Abstract: MLP322 ZXTEM322 ZXTEM322TA ZXTEM322TC npn 2222
Contextual Info: ZXTEM322 MPPSTM Miniature Package Power Solutions 80V NPN LOW SATURATION TRANSISTOR SUMMARY NPN —- VCEO= 80V; RSAT = 68m ; IC= 3.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer

transistor NEC D 882

Abstract: 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST DESCRIPTION