MICRO ELECTRONICS LTD TRANSISTOR Search Results

BFG480W

Abstract: 0805CS BP317
Contextual Info: APPLICATION INFORMATION 2 GHz low noise amplifier with the BFG480W Philips Semiconductors 2 GHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400W series.

Contextual Info: MICRO E LE CT RONI CS LTD 41E D b G T I TÛ ê 0 0 0 0 cl ci2 3 MEHK T -3 3 "/^ 2N3055 NPN HIGH POWER SILICON PLANER TRANSISTOR MECHANICAL UUTblWE. GENERAL DESCRIPTION The 2N3055 is an NPN silicon planer power transistor. It is intended for use in class B

Contextual Info: IC 2N3417 NPN SILICON TRANSISTOR TO-92 2N3417 is NPN silicon planar transistor designed for general purpose power applications. AF medium ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCB0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Contextual Info: WA PN3568 NPN SILICON TRANSISTOR PN3568 is NPN silicon planar epitaxial transistor TO-92 designed for amplifier and switching applications for collector current up to 500mA. ABSOLUTE MAXIMUM RATINGS EBC Collector-Base Voltage vCB0 Collector-Emitter Voltage

Contextual Info: • r . BF423 % ~ i :h ï : - ‘. l'\ PNP SILICON TRANSISTOR TO-92 BF423 is PNP silicon plgnar epitaxial transistor designed for high voltage video amplifiers in colour television receivers including grid driver and in driv e r stages ot high voltage line deflection circuits.

TO92A

Contextual Info: CRO PN3565 PNP SILICON TRANSISTOR TO-92A DESCRIPTION PN3565 is PNP silicon planar transistor designed for AF small signal amplifier stages. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

Contextual Info: CRO CL117 NPN SILICON TRANSISTOR TO-92F LEAD FORM to MELF-002 DESCRIPTION CL117 is NPN silicon planar transistor designed for general purpose high voltage and video amplifier application. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage

Contextual Info: PN3641 PN3642 PN3643 NPN SILICON TRANSISTORS TO-92A PN3641, PN3642 & PN3643 are NPN silicon planar transistors designed for small signal general purpose amplifiers and switches. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: CRO DESCRIPTION 2N 5225 transistor is NPN SILICON TRANSISTOR CASE T 0 -9 2 A NPN use 2N5225 in silicon general ? p lan ar p u rp o se consum er and industrial am p lifier and sw itching applications. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCRO

Contextual Info: CRO MPS3569 NPN SILICON TRANSISTOR TO-92A DESCRIPTION MPS3569 is NPN silicon plapar epitaxial transistor designed fo r AF medium power am plifiers. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage V cbo 80V Collector-Emitter Voltage VcEO 40V Emitter-Base Voltage

Contextual Info: MICRO GENERAL DESCRIPTION : The BC143 Is a PNP silicon planar epitaxial transistor. It features low saturation voltage, low collector cutoff current a:nd high breakdown voltage. It is intended for use in driver stage of high power audio amplifiers. It can be supplied together with

Contextual Info: CRO DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in AF small amplifiers and direct coupled circuits. Their maximum power dissipation = 160mW at Ta=25°C. CASE T0-92Á MPS TYPES MPS/2N2923,4,5 and similar types NPN SILICON

Contextual Info: O L -O IO CRO CL314 SILICON TRANSISTORS D E S C R IP T IO N C L 313, C L314 are com plem entary silicon planar epitaxial transistors'for use A F sm all signal am plifiers and drivers. ABSOLUTE MAXIMUM RATINGS CL313. Collector-Base Voltage Collector-Emitter Voltage

2N2924

Contextual Info: iVlJrà/zrN j j y u m r u CRO ¿jyo and similar types NPN SILICON TRANSISTOR D E S C R IP T IO N The above types are NPN silicon planar epitaxial transistors for use in A F small amplifiers and direct coupled circuits. CASE T0-92A Their maximum power dissipation

hx- je

Contextual Info: 2N/PN2904A 2N/PN2905A ¡v' 'PNP SILICON TRANSISTORS 2N/PN2904A & 2N/PN2905A are PNP s il icon planar epitaxial transistors. TO-39 T0-92A It is intended for high speed medium power switching and general purpose amplifier applications. ! ABSOLUTE MAXIMUM RATINGS

WSI PSD 813

Abstract: free circuit Dvd eprom programmer intel 80c196 microcontroller 80c251 AD0-AD15 ZPSD211R ZPSD813F psd4xx psd5xx ra 8620
Contextual Info: PSD MCU Peripherals Return to Main Menu What is a ZPSD and why should I use It? 1 C1 68H A Zero-Power Programmable System Device ZPSD is a support chip used with low-cost microcontrollers (MCU) in embedded control applications. PSDXF 8X 31 80C PSDXF 8X 11

MAL100

Abstract: l217
Contextual Info: MICRO ELECTRONICS CORP nE ß b c m ? ô a 0GDQ7b3 T M L-217 INFRARED EMITTING DIODE _ rr-4 H 3 I Outline typ The ML-217 is a very high output infrared light emitting diode using GaAlAs chip. Its high output is equivalent to about 2 times than that of conventional products.

Contextual Info: 2SA928 PNP SILICON TRANSISTOR DESCRIPTION TO-92B 2SA928 is PNP silicon planar transistor dedesigned for audio power amplifier. ECB ELECTRO-OPTICAL CHARACTERISTICS SYMBOL PARAMETER BVCBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage BVCEO

Contextual Info: CRO BFX48 PNP SILICON TRANSISTOR DESCRIPTION BFX48 is PNP silicon transistor designed for general purpose, saturated switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous

Contextual Info: CRO 2N 2907 2N 2 9 07A PN 2907 PN2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY.

Contextual Info: CRO 2N4029 PNP SILICON TRANSISTOR 04.74 0.19 DESCRIPTION 2N4029 is PNP silicon planar epitaxial transistor for AF medium power drivers and outputs. 0 5 .3 ( 0 .8 1 ) 0,76 <0.03) 5 .56(0.2?) i ’ T: 45 1.04 (0 .0 4) 12.7<0.5>M1N 9 7 ( 0 .0 3 8 ) 0 2 .5 4 ( 0 .1 )

FN2222A

Abstract: RT2222
Contextual Info: 2N2222 PN 2 2 2 2 2N2222A PN2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.

PN 2n2222A

Abstract: 3n2222 2N2222 2K2222 3N2222A 2N2222-PN2222 ST 2n2222 2K222 pn 2N22 VBB-23
Contextual Info: 2N2222 PN 2 2 2 2 2N2222A PN2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.

Contextual Info: Al BF 173 NFN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EEEL— EE CD " T R O r s i I S CASE T0-72J THE BF173 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR USE IN VIDEO IF AMPLIFIERS AND PARTICULAR FOR THE OUTPUT STAGES. ABSOLUTE MAXIMUM RATINGS