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    MH8100 Search Results

    MH8100 Datasheets (4)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MH8100
    Micro Electronics EPITAXIAL TRANSISTORS FOR 3-5W AF OUTPUT Scan PDF 174.76KB 4
    MH8100
    Micro Electronics Semiconductor Device Data Book Scan PDF 58.16KB 1
    MH8100
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 131.17KB 1
    MH8100F
    Micro Electronics 5V NPN silicon power transistor Scan PDF 84.6KB 2

    MH8100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n6125

    Contextual Info: Power Transistors TYPE POLA­ NO. RITY M AXIM UM RATINGS CASE Pd IC VCEO mW (A) (V) H FE VCE(sat) min max IT CO M P L E ­ IC VCE max IC min MENTARY (mA) (V) (V) (A) (MHz) TYPE 0.5 0.2 0.2 1 0.5 2 2 2 2 2 0.8 0.5 0.5 0.8 0.8 2 0.5 0.5 2 2 30 50 50 5 30 MH8100


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    mh8100mh8106mh8108mh8700+4mh0810mh0816mh08182n6125 PDF

    BC238 h parameter

    Abstract: MH 0810C hFE Group 8100C ME8100 MH8100 MH0810 BC308 1I103 BC238
    Contextual Info: MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3 - 5 W AF OUTPUT MICRO ELECTRONICS The MH8100 NPN , MH0810 (PNP) are complementary silicon planar epitaxial transistors designed fo r the output stages of 3 - 5 watt audio amplifiers. They are also suitable for


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    mh8100mh0810o-220b10rns+10100-ohmsbc238bc338bc308bc238 h parametermh 0810chfe group8100cme81001i103 PDF

    MICRO ELECTRONICS ltd transistor

    Contextual Info: CRO MH8100F NPN SILICON POWER TRANSISTOR DESCRIPTION MH8100F is NPN silicon planar epitaxial transistor designed for the output stages of 3-5W audio amplifiers. It is also suitable for switches up to 3A collector current. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage VBE=0


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    mh8100fmay-96micro electronics ltd transistor PDF

    MH8100F

    Contextual Info: MH8100F NPN SILICON POW ER TRANSISTOR D ESC RIPTIO N MH8100F is NPN silicon planar epitaxial transistor designed for the output stages of 3-5W audio amplifiers. It is also suitable for switches up to 3A collector current. ABSOLUTE M AXIM UM RATINGS Collector-Emitter Voltage V BE=0


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    mh8100fmay-96 PDF

    BC238 h parameter

    Abstract: 5v 3w audio amplifier 5.5w
    Contextual Info: MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3-.5W AF OUTPUT IVIIGRO ELECTRONICS The MH8100 NPN , MH0810 (PNP) are complementary silicon planar epitaxial transistors designed fo r the output stages of 3 - 5 watt audio amplifiers. They are also suitable for


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    mh8100mh0810o-220b55khz+7440ma0i80hw00t8hhbc238bc238 h parameter5v 3w audio amplifier5.5w PDF

    MH0810

    Abstract: MH8100
    Contextual Info: MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3-.5W AF OUTPUT IVIIGRO ELECTRONICS The MH8100 NPN , silicon planar epitaxial MH0810 (PNP) are complementary transistors designed for the output stages of 3 - 5 watt audio amplifiers. They are also suitable for


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    mh8100mh08102343q181 PDF

    Contextual Info: CRO MH8100F NPN SILICON POWER TRANSISTOR DESCRIPTION MH8100F is NPN silicon planar epitaxial transistor designed for the output stages of 3-5W audio amplifiers. It is also suitable for switches up to 3A collector current. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage VBE=0


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    mh8100f300/xs PDF

    MH0810

    Abstract: MH8100
    Contextual Info: M MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3-.5W AF OUTPUT IVIICRO ELECTRONICS The MH8100 NPN , MH0810 (PNP) are complementary silicon planar epitaxial transistors designed for the output stages of 3—5 watt audio amplifiers. They are also suitable for


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    mh8100mh0810o-220bta-25+1box6m77 PDF

    042c1

    Abstract: 2S090 SSP62 mrf486 2S0882 2sc2906 2S0898 042C3 B0329 THA13
    Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 TRM5504 TRM5504 TRM5504 TRM6014 TRM6014 TRM6014 TRM6504 TRM6504 -:-~~~g~: 25 30 35 40 45 50 TRM7014 TRM7014 TRM7504 TRM7504 TRM7504 TRL8014 TRL8014 TRL8014 2:;C;3001 2SC2906AK 2SC2906AM 2S0141 2S0141


    Original
    2sc643a2sc1892s015302s0898+14trm2014trm2504trm3014trm3504trm4014042c12s090ssp62mrf4862s08822sc2906042c3b0329tha13 PDF

    2SA532

    Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
    Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G


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    057-2g1611g1620g1621-2g+161623g1641g1n40011n40021n40041n40052sa532bc109 bc184 bc549bc3172sc734 yms181abc159 82sc876ttp31aml78m06abc357 PDF

    2sc1061

    Abstract: 2SC1626 2N6108
    Contextual Info: Power Transistors TYPE POLA­ CASE NO. RITY U te min max Ic A V ce (V) max (V) fl COMPLE­ min MENTARY lc (A) (MHz) TYPE D45C12 MH0810 MH0816 MH0818 MH0870 P P P P P TO-220 TO-220 TO-220 TO-220 TO-220 30 12 10 10 30 4 3 1 1 4 80 30 60 80 50 20 40 40 40 40


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    d45c12mh0810mh0816mh0818+9mh0870mh8100mh8106mh8108mh8500mh87002sc10612sc16262n6108 PDF