MH 3212 Search Results

DQ05

Contextual Info: E D I8F 32123C ^ E D I t\iCTÎ!OHC DESIGNS. NC.I 128Kx32 Battery Backed SRAM Module ADVANCED Features 128Kx32 bit CMOS Static Random Access Memory with on-board battery backup • Access Times 70 and 85ns • Master Protected Module Enable • Ni-MH Battery Cell Backup

NEC 3P4MH

Abstract: NEC3P4MH 3P4M 3P4MH N E C 3P4MH P D X CIH7 3p6m D1353 ft-03 3p6mh
Contextual Info: rx 4 -H I * úí 4 S; s V T ïïlill Pîl 2- m ist m ûri [PII m m 9+ Xf >fr 8Í SI I Ii M +u K:, 4 M V T ÏÏlill & O X- M >i •X p| ^ 3ts IMI hr ijffl H nn * M m «■ /s mH- <1 » m «Ì 4n •4 ô» n Or 3 sí H H* 9tt ■4 S IIV I gty » S o ! + Ì +

MH1SS1

Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Contextual Info: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik

74S487

Abstract: information applikation cdb 4121 e CDB 447 FZH 195 mh 3212 applikation heft 74LS125N MH 74141 FZH195
Contextual Info: m ô D ^ n iœ lo M s n a n ilK Information Applikation INTERFACE SCHALTUNGEN RGW mit internationaler Typen­ übersicht ¿ kH KKÄÄÄÄAZJ, r in iO lk r t^ B lo lK b n a in H K I Information Applikation H a f t I N T E E F A C E E 4 8 » - S C G H A L T U N G E N

Contextual Info: ^E D I EDI9F321024C EI«dronie Designi Inc. • High Speed 32 Megabit SRAM Module iP iiy n o M m f 1Meg x 32 CMOS Static RAM Module Features The ED I9F321024C CMOS Static RAM Module is orga­ nized as 1Meg x 32 bits. The module is constructed from 32128Kx8 Static RAMs

Contextual Info: E in z e lte il / Part Werkstoff / M aterial Oberf l aeche / Surface Gehaeuse / Housing CuZn39 Pb3 Au 0,8/im Innenleiter / Centre Contact B erylco 33-25 I s o l i e r t e i l / Insulator Au I J / m PTFE „4x 0 2 , 6 m e r-^ oo CM □ 2:1 Steckbereich n a ch

MAS 10 RCD

Abstract: MSM54V32128 1DQ23
Contextual Info: O K I Semiconductor_ M SM 54V 32126/8_ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM54V32126/8 is a new generation Graphic D RAM organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM54V32126/8 is OKI's CM O S silicon gate

29027

Abstract: HD29026A HD29026AFP HD29026AP HD29027 HD29027FP HD29027P HD29028 HD29028P VX30
Contextual Info: ߅ቴ᭽ฦ૏ ⾗ᢱਛߩ‫ޟ‬ᣣ┙⵾૞ᚲ‫ޔޠ‬ ‫ޟ‬ᣣ┙:‫╬ޠ‬ฬ⒓ߩᩣᑼળ␠࡞ࡀࠨࠬ࠹ࠢࡁࡠࠫ߳ߩᄌᦝߦߟ޿ߡ ‫ޓ‬ᐕ᦬ᣣࠍએߞߡਃ⪉㔚ᯏᩣᑼળ␠෸߮ᩣᑼળ␠ᣣ┙⵾૞ᚲߩࡑࠗࠦࡦ‫ޔࠢ࠶ࠫࡠޔ‬

BUX 0715

Abstract: BUX 127
Contextual Info: M M O T O R O L A Military 10579 Look-Ahead Carry Block ELECTRICALLY TESTED PER: 5962-8774601 The 10579 is a high speed, low power, standard M E C L complex function that is designed to perform the look-ahead carry function. Th is device can be used with the 10581 4-bit A LU directly, or with the 10580 dual arithmetic unit in any

RF3242

Abstract: RF3132 RF3240 RF3202 RF3232 single one jk flipflop RF3250 RG3210 rg3300 RF3120
Contextual Info: Digital Circuits RAY III Serles TTL Available T Y P IC A L C H A R A C T E R IS T IC S Packages Tpd ns Toggle Avg. Pwr. Function DC Noise Fanout Rale (mW) Margin Function (Min) 5 0 % Duty (V) or Type1 Description Number Pins 14 24 —» S i o u o u □ RF3120

CO-6FPFA-SB-CX75

Abstract: CL331-0550-4
Contextual Info: COUNT DESCRIPTION OF REVISIONS BY COUNT DATE CHKD A A A A BY DESCRIPTION OF REVISIONS DATE CHKD APPLICABLE STANDARD OPERATING TEMPERATURE RANGE STORAGE TEMPERATURE -40 °C TO +90°C 90%RH MAX RANGE W RATING POWER -40 °C TO +90°C(90%RH MAX) CHARACTERISTIC

GP 026

Contextual Info: 5895 BiMOS n 8-BIT SERIAL INPUT, LATCHED SOURCE DRIVERS UCN5895A SHIFT S E R IA L I DA TA IN 1 STR O B E 'VD0 I6 S E R IA L DA TA OUT 15 LO G IC SU P PLY 0Ë \A O U TP U T EN A BLE 13 LOAD SU P PLY O U T1 12 OUT 8 OU T It OUT 7 OUT-, 10 O U T 6 O U T 4 VBB

Contextual Info: 5895 ; BiMOS n 8-BIT SERIAL INPUT LATCHED SOURCE DRIVERS The UCN5895A and UCN5895EP BiMOS II serial-input, latched source drivers are designed for applications emphasizing low output saturation voltages and currents to -250 mA per output. These smart high-side octal, driver ICs merge an 8-bit CMOS shift

2SC4552

Contextual Info: y ’ — • y — h - 1 > y U / \ ° 7 - Silicon Power Transistor 2SC4552 2SC 4552 i, isîÜ X 'f h 9 •/ y X ^ t'L o w VcE<sat T'hFE ^ ^ T ' ' D C / D C f-iX -^ c o L T A IÜ T -to ( M Ù l •’ mm) > n 10.0 + 0 .3 4.5 + 0.2 2.7 + 0.2 # m O hFE <( Î Ê VCE(sat) X ' " Ÿ o

TH 2190 Transistor

Abstract: 2SC4815
Contextual Info: X — £ • y — h NEC V y = 3> / \ °7 - h 7 > P N X f c f 'J = i> V ÿ ' s y X Ç ¡É M U Z I N 7 > VX 9 Ti& VCE „ l t'hFE W Jv>ntDC/DC a 2SC4815IÌ, HjitX-i if# ;? -f- .2. J E — ^ (7) K ' 7 ' /f yS' t L T Îx iS ^ '^ o ft O h p E ^ Î Ê V cE (s a t)

la 7630

Abstract: TD-7630 2SC4551 IC-20 D1559 1MH60 td7630
Contextual Info: NEC y\jz]> /\° 7 - h 7 > y x ^ Silicon Power Transistor 2SC4551 7 JIM V lJ =l > h 7 > V X £ NPNI Ü Ü JfX > f 2SC4551 ü , '^ X ^ T 'L o w tüiâx-f 7 f y mm L T W 5 è £ t ó ''ot7 - h 7 > ¥ i i : mm V c E (s a t)T 'h FE ^ 'it ;^ ( 7 ) T " D C / D C

MPC5676R

Abstract: bosch edc 17 MPC5676RRM st5027 MAC MTA E200 ssy 1920 8 pin bosch edc 17 calibration maps Power Diode 818 bosch injector driver SAE J2602-1
Contextual Info: MPC5676R Microcontroller Reference Manual Devices Supported: MPC5676R MPC5676RRM Rev. 3.1 13 October 2011 Preliminary—Subject to Change Without Notice How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed:

DIODE PK1N

Abstract: diode s453 eeprom s130 cx 2601 yx 801 ic pk1n diode s526 4419 power ic S432 DIODE schottky S134 .5A
Contextual Info: ST Sitronix ST7773 262K Color Single-Chip TFT Controller/Driver 1. Introduction ST7773 is a single-chip controller/driver for 262K-color, graphic type TFT-LCD. It consists of 528 source line and 220 gate line driver circuits. This chip can be connected to a microprocessor direct through Serial Peripheral Interface SPI or

SLAU049B

Abstract: MSP430 thermocouple k type
Contextual Info: MSP430x43x, MSP430x44x MIXED SIGNAL MICROCONTROLLER SLAS344A – JANUARY 2002 – REVISED FEBRUARY 2002 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D D D – Active Mode: 280 µA at 1 MHz, 2.2 V – Standby Mode: 1.1 µA

voltage regulator ana 618 -28239

Abstract: voltage regulator ana 618 21153 mdu 2657 voltage regulator ana 618 21156 MPC5674 MPC5674F MPC5674F manual mPC5764 MPC5674FRM ANA 618 21156
Contextual Info: MPC5674F Microcontroller Reference Manual Devices Supported: MPC5674F MPC5673F MPC5674FRM Rev. 4 8/2010 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc.

TDA1908A

Abstract: A 1908 transistor a830s BA810S 1908A
Contextual Info: S G S-THOMSON 07E » | 7=12^537 O O là S b â 0 | 7929225 S G S SEMICONDUCTOR CORP F ' ~ TDA1908 LINEAR INTEGRATED CIRCUITS 8W AUDIO A M P LIFIER The T D A 1908 is a monolithic integrated circuit in 12 lead quad In-line plastic package Intended for low

2SC2334

Abstract: 2SA1010 MP-25
Contextual Info: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SC2334 NPN エピタキシアル形シリコン・トランジスタ 高速度スイッチング用 工業用 ★ 2SC2334 は，高速度スイッチング用として開発されたモールド

2SA1069

Abstract: 2SA1069A MP-25 1069A mh 3212
Contextual Info: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SA1069, 1069A PNP エピタキシアル形シリコン・トランジスタ 高速度スイッチング用 工業用 ★ 2SA1069,1069A は，高速度スイッチング用として開発された

2SA1008

Abstract: 2SC233 2SC2331 MP-25 D1486
Contextual Info: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SA1008 PNP エピタキシアル形シリコン・トランジスタ 高速度スイッチング用 工業用 ★ 2SA1008 は，高速度スイッチング用として開発されたモール