MGFK39V4045 Search Results

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK39V4045 14.0 – 14.5 GHz BAND / 8W DESCRIPTION The MGFK39V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFK39V4045

Abstract: HIGH GAIN FET
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK39V4045 14.0~14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET DESCRIPTION The MGFK39V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0~14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFK39V4045

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK39V4045 14.0-14.5GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK39V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFK39V4045

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK39V4045 14.0-14.5GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK39V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK39V4045 14.0 – 14.5 GHz BAND / 8W DESCRIPTION The MGFK39V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> « s i s i.Ä = : MGFK39V4045 14.0~14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET DESCRIPTION The MGFK39V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK39V4045 14.0-14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET DESCRIPTION OUTLINE DRAWING U n it: m illim eters inches The M G FK39V4045 is an internally im pedance matched GaAs power FET especially designed for use in 14.0-14 .5

MGF2430A

Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

MGFK30M4045

Abstract: mgfx35v0510 MP6704 MGFX35V0005 MGFK35M4045 M-Typ MGFK33M4045 MGFK35V2228 MGFK35V2732 MGFK35V4045
Contextual Info: - 156 - M € *± € m 1* & a f ï t * 1 1/ h' ü V A * £ (V) 9t * të S P d /P c h (A) * * (W) MGFK30M4045 MW PA GaAs N D -14 GDO -14 0 1. 2 D 7.5 MGFK33M4045 MW PA GaAs N D -14 G DO -14 0 2.4 D 15 MW PA GaAs N D -14 GDO -14 0 4. 5 D 30 MGFK35V2228

3642G

Contextual Info: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m

MGFK37V4045

Contextual Info: Ku BAND INTERNALLY MATCHED GaAs FET MGFKxxVxxxx Series Typical Characteristics P ld i dBm G lp (dB) f (GHz) MGFK35V2228 3 5 .5 7 .0 1 2 .2 - 1 2 .8 •'nBQ« 3 5 .5 7 .0 1 2 .7 - 1 3 .2 3 8 .0 6 .0 3 8 .0 Type 3*» M Q fK a n r^ S MGFK38V2732 MGFK25V4045 *