MGFC42V7177 Search Results

Contextual Info: <C band Internally Matched Power GaAs FET> MGFC42V7177 7.1 - 7.7GHz BAND / 16W DESCRIPTION The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package

Contextual Info: <C band Internally Matched Power GaAs FET> MGFC42V7177 7.1 - 7.7GHz BAND / 16W DESCRIPTION The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V7177 7 . 1 - 7.7G Hz BAND 1 6W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 4 2 V 7 1 7 7 is an in te rn a lly im pedance-m atched G aAs p o w e r F E T especially designed fo r use in 7 . 1 —7 . 7 G H z band a m p lifie rs . T h e h e rm e tic a lly sealed m eta l-c e ram ic

MGFC47B3538B

Abstract: MGFC47B
Contextual Info: <C band Internally Matched Power GaAs FET> MGFC47B3538B 3.5 – 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 – 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package

mgfc30

Abstract: MGFC39V5964A
Contextual Info: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed

pp gf

Abstract: gfc42 M5M27C102
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC42V7177 7.1—7.7GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M GFC42V7177 is an internally impedance-matched GaAs power F E T especially designed for use in 7 .1 —7.7 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: <C band Internally Matched Power GaAs FET> MGFC47B3538B 3.5 – 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 – 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package