MG60 Search Results

Contextual Info: MG600Q1US41 HIGH POWER SW ITCHING APPLICATIONS. MOTOR CO N TRO L APPLICATIONS. High Input Impedance H ighspeed : tf= 0.5/iS Max. Low Saturation Voltage : V cE (sat) = 4.0V (Max.) Enhancement-Mode : TOSHIBA 2-109E1A Outline (See page 3 for the device outline)

Contextual Info: TO SH IBA MG600Q1US41 TO SH IBA G IR M O D U L E M G 6 SILICON N C H A N N EL IGBT Q 1 U S 4 1 HIGH POW ER SW ITCHING APPLICATIONS. M O T O R CONTRO L APPLICATIONS. • High Input Impedance • H ig h sp e e d : tf=0.5/us Max. • Low Saturation Voltage : V c jj(s a y = 4.0V (Max.)

MG60M1AL1

Abstract: TOSHIBA TRANSISTOR MG60M1AL1
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG60M1AL1 HIGH POWER SWITCHING APPLICATIONS. INDUCTION HEATING APPLICATIONS. Unit in FEATURES: , With Buult-in Free Wheeling Diode . High DC Current: Gain 4 ±0.2 04.5 : hjrE=100 Min. (Ic=60A) . Low Saturation Voltage : VcE(sat)*2V(Max.)(Iq = 60A)

MG60M1AL1

Abstract: 12G-V
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG60M1AL1 HIGH POWER S W I T C H I N G APPL IC AT I ON S. I NDUCTION HE A T I N G A P P LI CA TI O NS . FEATURES: . With B u u l t - i n F r e e Wheeling Diode . High DC C u r r e n t Gain : hpE=100 Min. (Ic=60A)

4000 watt power UPS circuit diagram

Abstract: 3000 watt ups circuit diagram 1000 watts ups circuit diagram with detail MG600Q2YS60A IGBT 600V 600A
Contextual Info: MG600Q2YS60A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD Compact IGBT Series Module 600 Amperes/1200 Volts A D H J K DETAIL "A" C2E1 E2 C1 B E F M W F G G #110 TAB (8 PLACES) X (4 PLACES) N Y (3 PLACES)

Contextual Info: MG600J1US51 TOSHIBA M G 6 0 0 J 1 US51 TOSHIBA GTR M O DU LE SILICON N CHANNEL IGBT HIGH POWER SW ITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed : ^ = 0 .3 0 /^ Max. (I0 = 6OOA)

MG600Q2YS60A

Contextual Info: MG600Q2YS60A MITSUBISHI IGBT Module MG600Q2YS60A High Power Switching Applications Motor Control Applications The electrodes are isolated from case. Enhancement−mode Thermal output terminal TH Equivalent Circuit TH1 C1 TH2 G1 Fo1 E1 E1/C2 G2 Fo2 E2 E2

VQE 23F

Abstract: MG600Q2YS60A
Contextual Info: TO SH IBA MG600Q2YS60A TOSHIBA IGBT MODULE SILICON N CHANNEL IGBT MG600Q2YS60A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. Enhancement-Mode Thermal Output Terminal TH EQUIVALENT CIRCUIT

Contextual Info: MG Series Metal Glaze Film Resistors • • • • • Resistances from 1kOhm to 2GOhms Power Rating to 2 Watts Resistance Tolerances to ±0.5% Max. working voltage to 10kV Convenient RN Type Package Styles SPECIFICATIONS Type DIN-44061 Type MG55 MG60 MG65

MG600J2YS60A

Contextual Info: MG600J2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG600J2YS60A 600V/600A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)

VQE 23F

Abstract: MG600Q2YS60A
Contextual Info: TO SH IBA MG600Q2YS60A TOSHIBA IGBT MODULE SILICON N CHANNEL IGBT MG600Q2YS60A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. Enhancement-Mode Thermal Output Terminal TH EQUIVALENT CIRCUIT

MG600Q2YS60A

Contextual Info: MG600Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q2YS60A High Power Switching Applications Motor Control Applications • The electrodes are isolated from case. • Enhancement−mode • Thermal output terminal TH Equivalent Circuit TH1 C1 TH2

Contextual Info: MG600J2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG600J2YS60A 600V/600A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)

mg600q1us51

Contextual Info: MG600Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG600Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max)

Toshiba bridge diode

Abstract: MG600Q1US51
Contextual Info: MG600Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG600Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (max) Enhancement-mode

diode 10000v

Abstract: MG50 MG55 MG60 MG65 MG75
Contextual Info: MG Series Film Resistors • • • • • Resistances from 50kOhm to 2GOhms Power Rating to 3Watts Resistance Tolerances to ±0.5% Max. working voltage to 10000V Convenient RN Type Package Styles SPECIFICATIONS Type MG50 MG55 MG60 MG65 Resistance Range

MG600J2YS61A

Contextual Info: MG600J2YS61A TOSHIBA IGBT Module Silicon N Channel IGBT MG600J2YS61A 600V/600A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)

MG600Q1US61

Abstract: TOSHIBA IGBT DATA BOOK
Contextual Info: MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications • High input impedance · High speed: tf = 0.3 µs max Unit: mm Inductive load · Low saturation voltage: VCE (sat) = 2.6 V (max)

Contextual Info: TOSHIBA MG600J1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 6 0 0 J 1 US51 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed : tf= 0.30^s Max. (Ic = 600A)

MG600Q1US51

Contextual Info: MG600Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG600Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode

MG600J2YS61A

Abstract: IC6001
Contextual Info: MG600J2YS61A MITSUBISHI IGBT Module MG600J2YS61A 600V/600A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)

5D03

Contextual Info: TOSHIBA MG600J1US51 TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT M G 6 0 0 J 1 US51 HIGH PO W E R SWITCHING APPLICATIONS. M OTO R CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • H ig h In p u t Im pedance • Enhancem ent-Mode • H ig h Speed : tf= 0.30/i<s M ax. ( I c = 600A)

Contextual Info: MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications • High input impedance • High speed: tf = 0.3 µs max Unit: mm Inductive load • Low saturation voltage: VCE (sat) = 2.6 V (max)

MG600Q1US51

Abstract: 10EFF
Contextual Info: TOSHIBA MG600Q1US51 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 6 0 0 Q 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3/*s Max. @Induetive Load Low Saturation Voltage