MG1014 Search Results

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

MG1140E

Abstract: 000GATES
Contextual Info: Tem ic Array MATRA MHS MG1RT : Radiation Tolerant 0.6|im CMOS Sea Of Gates Description TEMIC / MATRA MHS is the first European supplier for space application submicronic radiation tolerant CMOS ASICs. This is why TEMIC keeps offering a fluent way of moving up and down the quality and the space/radiation

atmel 738

Abstract: MG1070 ATMEL 706 MG1001 atmel 829
Contextual Info: MG1 0.6 Micron Sea of Gates Introduction The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using SCMOS 2/2, a 0.6 micron drawn, 3 metal layers CMOS

automatic water level controller 7400 circuit

Abstract: 7400 ecl inverter MATRA MHS MG1000E MG1004E MG1009E MG1014E MG1020E MG1033E MG1042E
Contextual Info: MG1RT MG1RT Sea of Gates Series 0.6 Micron CMOS Description The MG1RT series is a 0.6 micron 3 metal layers, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1RT is

diode smd marking BUF

Abstract: MG1140E CQCC2-F172 qml-38535 smd marking 1331 5962-00B0103
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 17 18 19 20 REV STATUS REV OF SHEETS SHEET PMIC N/A PREPARED BY 21 22 1 2 3 4 5 7 8 9 10 11 12 13 DEFENSE SUPPLY CENTER COLUMBUS Thomas M. Hess STANDARD MICROCIRCUIT DRAWING 6 COLUMBUS, OHIO 43216

Contextual Info: Temic MG1 S e m i c o n d u c t o r s MG1 Sea of Gates Series 0.6 Micron CMOS Description The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using

jtag 14

Contextual Info: MG1 0.6 Micron Sea of Gates Introduction The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using SCMOS 2/2, a 0.6 micron drawn, 3 metal layers CMOS

MQFPL160

Abstract: UD02 UD09 LCC100 QuickLogic Military FPGA Introduction UD10 atmel 336 20RA10 XC7000 PGA68
Contextual Info: Digital Integration Design done by Customer and TEMIC MATRA MHS Digital Integration Introduction When integrating the digital part of modern electronic system, various technical and financial criteria are considered. Over 10 years of ASIC experience have shown

amd 29050

Abstract: VHDL CODE FOR PID CONTROLLERS 20630 Xilinx XC2000 LCC100 UD09 LCC84 UD10 8251 uart vhdl MCT8
Contextual Info: Digital Integration Introduction When integrating the digital part of modern electronic systems, various technical and financial criteria must be considered. Over 10 years of ASIC experience have shown that no one methodology can meet all requirements at the same time.

84 LCC

Abstract: g1140 IC TTL 7400 input leakage current
Contextual Info: Tem ic MG1RT Semiconductors MG1RT Sea of Gates Series 0.6 Micron CMOS Description The MG1RT series is a 0.6 micron 3 metal layers, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1RT is

gunn diodes

Abstract: gunn diode datasheet MG1005-11 Gunn Diode gunn MG1001 MG1007-15 10 GHz gunn diode MG1061 MG1040-16
Contextual Info: GUNN Diodes Cathode Heat Sink TM MG1001 – MG1061 Discrete Frequency: Cathode Heatsink Features ● CW Designs to 500 mW ● Pulsed Designs to 10 W ● Frequency Coverage Specified from 5.9–95 GHz ● Low Phase Noise ● High Reliability Applications

Xtal Oscillators using 7400

Abstract: MG1RT 7400 datasheet 2-input nand gate atmel 846 M6207 TTL 7400 propagation delay MG1000E MG1004E MG1009E MG1014E
Contextual Info: MG1RT Radiation Tolerant 0.6 Micron Sea of Gates Description The MG1RT series is a 0.6 micron 3 metal layers, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1RT is

TRANSISTOR B737

Abstract: MD80C31 smd TRANSISTOR code marking 8K 67202FV PGA300 5962-8506401MQA ERC32SIM marking code RAD SMD Transistor npn ISO DIMENSIONAL certificate formats 67205E
Contextual Info: Integrated Circuits for Aerospace and Defense Short Form 1998 16 June 1998 Publisher: TEMIC Semiconductors La Chantrerie BP 70602 44306 Nantes Cedex 03 FRANCE Fax: +33 2 40 18 19 60 E:mail nantes.marcom@temic.fr World Wide Web: http://www.temic.de 16 June 1998

MG1000E

Abstract: MG1004E MG1009E MG1014E MG1020E MG1033E MG1042E M1553
Contextual Info: MG1RT Radiation Tolerant 0.6 Micron Sea of Gates Description The MG1RT series is a 0.6 micron 3 metal layers, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1RT is

MG1070

Contextual Info: MG1 MG1 Sea of Gates Series 0.6 Micron CMOS Description The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using

P-Channel Depletion-Mode

Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
Contextual Info: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

MG-1018-16

Contextual Info: GUNN Diodes Cathode Heat Sink TM MG1001 – MG1061 Discrete Frequency: Cathode Heatsink Features CW Designs to 500 mW Pulsed Designs to 10 W Frequency Coverage Specified from 5.9–95 GHz Low Phase Noise High Reliability Applications Motion Detectors Description

TSMC 0.18 um MOSfet

Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221
Contextual Info: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes

5962L0053605VYC

Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A