MG 82 E Search Results

Model 82 Material Declaration

Abstract: BI Technologies
Contextual Info: 10/3/2013 LF and non-LF option content are identical after 2/1/2005 Prepared by Eric Arnold 714 447-2565 No content is banned per E.U. RoHS. Average mass of 82 trimmer is 0.34 gram each. Weights above 1 milligram rounded to the nearest mg. Values less than 1 milligram given in scientific notation.

SRAM Cross References

Abstract: UT9Q512K8 SRAM SAMSUNG UT8Q512K8 36E-4 weibull test data 19E4
Contextual Info: Single Event Effects Qualification UT8Q512K8 RQ02 Lot 6ZVL04 4Mbit SRAM 7/21/03 Craig Hafer 719-594-8319 craig.hafer@aeroflex.com SUMMARY-Single event effects qualification testing was performed on the UTMC 4Mbit SRAM, (Samsung Rev C die), Lot 6ZVL04, at the Lawrence Berkeley Laboratory using

Contextual Info: SCA610-E28H1A Datasheet SCA610-E28H1A SINGLE AXIS ACCELEROMETER WITH ANALOG INTERFACE The SCA610 accelerometer consists of a silicon bulk micro machined sensing element chip and a signal conditioning ASIC. The chips are mounted on a pre-molded package and wire bonded to appropriate contacts.

Contextual Info: SCA620-EF8H1A Product Specification SCA620-EF8H1A SINGLE AXIS ACCELEROMETER WITH ANALOG INTERFACE The SCA620 accelerometer consists of a silicon bulk micro machined sensing element chip and a signal conditioning ASIC. The chips are mounted on a pre-molded package and wire bonded to appropriate contacts.

Contextual Info: SCA620-EF1V1B Datasheet SCA620-EF1V1B SINGLE AXIS ACCELEROMETER WITH ANALOG INTERFACE The SCA620 accelerometer consists of a silicon bulk micro machined sensing element chip and a signal conditioning ASIC. The chips are mounted on a pre-molded package and wire bonded to appropriate contacts.

Contextual Info: SCA630-EDCV1B Datasheet SCA630-EDCV1B SINGLE AXIS ACCELEROMETER WITH ANALOG INTERFACE The SCA630 accelerometer consists of a silicon bulk micro machined sensing element chip and a signal conditioning ASIC. The chips are mounted on a pre-molded package and wire bonded to appropriate contacts.

Contextual Info: SCA610-ECKH1A Datasheet SCA610-ECKH1A SINGLE AXIS ACCELEROMETER WITH ANALOG INTERFACE The SCA610 accelerometer consists of a silicon bulk micro machined sensing element chip and a signal conditioning ASIC. The chips are mounted on a pre-molded package and wire bonded to appropriate contacts.

Sca100t

Contextual Info: Doc.Nr. 82 1178 00 Data Sheet SCA100T-D07 2-AXIS HIGH PERFORMANCE ANALOG ACCELEROMETER Features Applications •      Measurement range ±12g Measurement bandwidth 400 Hz Low noise ratiometric analog voltage outputs Excellent bias stability over temperature and time

MCT12K

Abstract: MCR50K MCT29K
Contextual Info: Tem ic Semiconductors Gate Arrays TEMIC Semiconductors offers an extended gate array family providing full solutions to customers. Several technologies from 0.85 |n 2 metal to 0.6 ¡i 3 metal, offer speed and high levels of integration. MG2: CMOS Sea-of-Gates Family:

2E12

Abstract: FSGL033D1 FSGL033R3 FSGL033R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSGL033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

Contextual Info: FSGYE033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

Contextual Info: A B C L2 CACHE CONNECTORS 4 Int*[0.5] CLOCKA CLOCKB ModeClock ModeIn VccOk ColdReset* Reset* ScDOE* TAG_CLOCK ScTCE* ScMatch ScTOE* ScTDE* Int*[0.5] CLOCKA CLOCKB ModeClock ModeIn VccOk ColdReset* Reset* ScDOE* TAG_CLOCK ScTCE* ScMatch ScTOE* ScTDE* D E

Contextual Info: RoHS P55/CS32 Silicon Diodes with Silicon Oxide Passivation in Kovar Pill Package Product Environmental Data Sheet P55/CS32 Semiconductor Silicon Chip – Oxide Passivated Silicon with Boron Doping CAS 1E-10 Silicon Gold Plated Contact 7400-21-3 Contact P55/CS32 - Package

EZ 642

Abstract: EZ 644 9444S 61428
Contextual Info: /-y{y-/x/-y{y-+ 2030}896, /0./ 54;,6 6,1}< -A>KLIAJ S 5:@ jn`kZ_`e^ ZXgXY`c`kp.GE585EG/ S 9bS [`\c\Zki`Z jki\e^k_ .Y\kn\\e Zf`c Xe[ ZfekXZkj/ S Jfn _\`^_k> 642:dd S 5 gfc\ .GE585EG/0 6 gfc\j .GE585EC/ Zfe]`^liXk`fej XmX`cXYc\ S PfZb\kj XmX`cXYc\ S TXj_ k`^_k Xe[ ]clo giff]\[ kpg\j XmX`cXYc\

Contextual Info: RoHS CS32SP Silicon Diode with Silicon Oxide Passivation in a Copper Pill Package Product Environmental Data Sheet CS32SP Semiconductor Silicon Chip – Oxide Passivated Silicon with Boron Doping CAS 1E-10 Silicon Gold Plated Contact 7400-21-3 Contact CS32SP - Package

1E14

Abstract: 2E12 FSPYC164D1 FSPYC164R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSPYC164R, FSPYC164F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

2E12

Abstract: FSPJ160D1 FSPJ160R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSPJ160R, FSPJ160F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

Contextual Info: FSGJ063R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

Contextual Info: FSGS033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

fairchild reliability report transistor

Abstract: 2E12 FSGYE035D1 FSGYE035R3 FSGYE035R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSGYE035R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

2E12

Abstract: FSGS130D1 FSGS130R3 FSGS130R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSGS130R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

Contextual Info: FSGYC065R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

Contextual Info: FSGL130R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

FSGYE130R4

Abstract: Rad Hard in Fairchild for MOSFET 2E12 FSGYE130D1 FSGYE130R3
Contextual Info: FSGYE130R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both