MFM8 Search Results

Contextual Info: 128K x 8 FLASH MFM8126 - 70/90/12 Issue 4.3 : April 2001 Features • Fast Access Time of 70 / 90 / 120ns. • Operating Power Read 165mW Max Program/Erase 275mW (Max) Standby Power 5.5mW (Max) • JEDEC standard package. • Flexible Sector Erase Architecture - 16K byte sector

LM 7420

Contextual Info: 512K x 8 FLASH mosaic MFM8516-80/90/12/15 Issue 4.1: March 1997 semiconductor, inc. 524,288 bit FLASH EEPROM Features Description • 4 Megabit FLASH memory. The MFM8516 is a 4 Megabit CMOS 5.0V only FLASH Monolithic memory organised as 512K X 8. Access times of 80, 90,120 and 150 ns are

PA 0610 D5

Contextual Info: 128K x 8 FLASH MFM8126S - 70/90/12 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 4.2 : November 1998 Features • Fast Access Time of 70 / 90 / 120ns. • Operating Power Read 165mW (Max) Program/Erase 275mW (Max)

OHD7

Contextual Info: 512K x 8 FLASH MFM8516 - 55/70/90/12 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Description The MFM8516 is a 4M Bit CMOS 5V only Flash monolithic device organised : 512K x 8. The device

FT152

Abstract: ft152 circuit TVPA
Contextual Info: ÜUU 1 ' *4 ê moîaïc 512 K X 8 FLASH EEPROM MFM8512G/J/S/V/W-12/15/20 Issue 1.0 : September 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r r Features Access Times of 120/150/200 ns Operating Power 150 mW typ Read Low Power Standby TTL levels 55MW (max. @ 70°C)

TT 2146

Abstract: 8641 6 pin ic tt 2144
Contextual Info: Issue 1.1 : July 1989 MFM864V/J-25/30 MFM864V/J 64K x 8 CMOS FLASH EEPROM Sï u e '. ' : Ju ly 1989 ADVANCE PRODUCT INFORMATION 65,536 x 8 CMOS FLASH EEPROM Features ^ • Pin Definitions Package Type: 'V','J' FLASH™ Eraseable Non-Volatile Memory Access Times of 250/300 nS

Contextual Info: TRAILING EDGE PRODUCT - MINIMUM ORDER APPLIES. PRODUCT MAY BE MADE OBSOLETE WITHOUT NOTICE 128K x 8 FLASH MFM8126 - 70/90/12 Issue 4.3 : April 2001 Features • Fast Access Time of 70 / 90 / 120ns. • Operating Power Read 182mW Max Program/Erase 305mW (Max)

30H22

Contextual Info: 512KX 8 FLASH EEPROM molate MFM8512G/J/S/V/W-12/15/20 Issue 1.0 : September 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r S’ Pin Definition 524,288 x 8 CMOS FLASH EEPROM Memory Features Access Times of 120/150/200 ns Operating Power 150 mW typ Read

MFM8

Contextual Info: JAN fc 1 1992 512K x 8 FLASH EEPROM m o t a i e MFM8512G/J/S/V/W-12/15/20 Issue 1 .0 : J A N 1 9 9 2 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r -' Pin Definition Vpp A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DO D1 D2 GND 524,288 x 8 CMOS FLASH EEPROM Memory

Contextual Info: • 19g; 128K X 8 FLASH EEPROM molate MFM8128G/J/S/V/W-15/20 Issue 1.1 : JANUARY 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c t o r Pin D efinition Vpp A16 A15 A12 A7 A6 AS A4 A3 A2 A1 AO DO D1 D2 GND 131,072 x 8 CMOS FLASH EEPROM Memory Features Access Times of 150/200 ns

Contextual Info: MFM8T516-90/12/15 mosaic 512K x 8 FLASH Issue 4.2 June 1996 semiconductor, inc. 524,288 bit FLASH EEPROM Description Features The MFM8T516 is a 4 Megabit CMOS 5.0V only • FLASH Monolithic memory organised as 512K X 8. • Access times of 90 ,1 20 and 150 ns are available.

Contextual Info: 128K x 8 FLASH MFM8126 - 70/90/12 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Issue 4.2 : November 1998 Features • Fast Access Time of 70 / 90 / 120ns. • Operating Power Read 165mW (Max)

Contextual Info: 512K x 8 FLASH mosaic MFM8516 - 70/90/12/15 semiconductor, inc. 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230_ Issue 4.7 : November 1998 524,288 bit FLASH EEPROM Description The MFM8516 is a 4M Bit CMOS 5V only Flash Features

Contextual Info: molale 128Kx 8 FLASH EEPROM MFM8128G/J/S/V/W-15/20 Issue 1.1 : JANUARY 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r /•-Pin Definition inc. V « A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 AO DO D1

Contextual Info: MFM8128V/J-25/30 Issue 1.1 : July 1989 128K x 8 CMOS FLASH MFM8128V/J EEPROM ADVANCE PRODUCT INFORMATION 131,072 x 8 CMOS FLASH EEPROM Features FLASH™ Eraseable Non-Volatile Memory Access Times of 250/300 ns Operating Temperature Range -40 to +85°C Supply voltage range of 5V±10%

TT 2146

Contextual Info: Issue 1.1 : July 1989 MFM864V/J-25/30 64K x 8 CMOS FLASH MFM864V/J EEPROM ADVANCE PRODUCT INFORMATION 65,536 x 8 CMOS FLASH EEPROM Features z'- -

0C000H-0FFFFH

Contextual Info: TRAILING EDGE PRODUCT - MINIMUM ORDER APPLIES. PRODUCT MAY BE MADE OBSOLETE WITHOUT NOTICE 128K x 8 FLASH MFM8126 - 70/90/12 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Issue 4.3 : April 2001

Contextual Info: 512K x 8 FLASH MFM8516 - 70/90/12/15 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0 191 2930500 Fax. +44 (0) 191 2590997 Description The MFM8516 is a 4M Bit CMOS 5V only Flash monolithic device organised : 512K x 8. The device

Contextual Info: TRAILING EDGE PRODUCT - MINIMUM ORDER APPLIES. PRODUCT MAY BE MADE OBSOLETE WITHOUT NOTICE 512K x 8 FLASH MFM8516 - 55/70/90/12 Issue 5.0 : April 2001 524,288 bit FLASH EEPROM Description The MFM8516 is a 4M Bit CMOS 5V only Flash monolithic device organised : 512K x 8. The device

Contextual Info: 512K x 8 FLASH MFM8516 - 55/70/90/12 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Description The MFM8516 is a 4M Bit CMOS 5V only Flash monolithic device organised : 512K x 8. The device

code a7w

Abstract: a7w 82 a7w 97 a7w 83 A7W 88 A7w 50 645Q a7w 60 a7w 68 A7W 19
Contextual Info: t a »91 molate 128K x 8 FLASH Memory MFM8129-12/15/20 Issue 1.0 : October 1991 ADVANCE PRODUCT INFORMATION Semiconductor /p in Definitions 131,072 x 8 bit CMOS FLASH Memory. Vpp A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 AO DO D1 D2 GND Features Access times of 120/150/200 ns. 90ns in development

D316251

Abstract: MOSAIC SEMICONDUCTOR 100-MIL
Contextual Info: i s ’W 256K X 8 FLASH EEPROM molate MFM8256G/V-12/15/20 Issue 1.0 May 1992 ADVANCE PRODUCT INFORMATION Mosaic Semiconductor A Pin Definition 262,144 x 8 CMOS FLASH EEPROM Memory Features Access Times of 120/150/200 ns Operating Power 150 mW typ Read Low Power Standby

Contextual Info: TRAILING EDGE PRODUCT - MINIMUM ORDER APPLIES. PRODUCT MAY BE MADE OBSOLETE WITHOUT NOTICE 512K x 8 FLASH MFM8516 - 55/70/90/12 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Issue 5.0 : April 2001

Contextual Info: 128K x 8 FLASH MFM8126S - 70/90/12 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 4.2 : November 1998 Features • Fast Access Time of 70 / 90 / 120ns. • Operating Power Read 165mW (Max) Program/Erase 275mW (Max)