METAL DIODE Search Results

TQTRX

Contextual Info: Production Released Process TQRLC TQTRx Advanced PassivesFoundry Foundry Service Service GaAs MESFET Passivation Via Metal 3 Metal 3 - 5 um Features • • Metal 2 Dielectric Metal 1 Metal 1 Metal 2 - 2 um • Metal 1 - 2 um Dielectric MIM Metal Metal 0 MIM Capacitor

RF MESFET S parameters

Abstract: TQTRX
Contextual Info: Production Released Process TQTRp TQTRx Advanced Passives MESFETFoundry Foundry Service Service GaAs &MESFET Passivation Via Metal 3 Metal 3 - 5 um Metal 2 Dielectric Metal 1 Metal 1 Metal 2 - 2 um • • Dielectric MIM Metal NiCr Metal 0 N+ Isolation Implant

GaAs 0.15 um pHEMT

Abstract: RF TRANSISTOR 10GHZ microwave office RF TRANSISTOR 10GHZ low noise TRANSISTOR 10GHZ IDSS Semiconductors
Contextual Info: Production Process TQPHT 0.5 um pHEMT Foundry Service Features Metal 2 - 4um Metal 2 Dielectric Dielectric • Metal 1 - 2um Metal 1 Metal 1 • • Dielectric NiCr MIM Metal • • Metal 0 Nitride N+ Pseudomorphic Channel pHEMT Isolation Implant Isolation

Q302

Abstract: phemt Lithography
Contextual Info: Advanced Information TQPHT 0.5 um pHEMT Foundry Service Features Metal 2 - 4um Metal 2 Dielectric Dielectric • Metal 1 - 2um Metal 1 Metal 1 • • Dielectric NiCr MIM Metal • • Metal 0 Nitride N+ Pseudomorphic Channel pHEMT Isolation Implant Isolation

TQTRX

Abstract: TQ5M31 TQ3M31 79GHz 121GHz mesfet
Contextual Info: Production Process TQTRx GaAs MESFET Foundry Service Features Metal 2 - 4um Metal 2 • Dielectric Metal 1 • Dielectric Metal 1 - 2um Metal 1 • Dielectric NiCr MIM Metal Metal 0 N+ N+ Isolation Implant N-/P- Channel E,D,G MESFET NiCr Resistor MIM Capacitor

metal detector plans

Abstract: metal detector plans schematic digital metal detector Triquint TQPED PHEMT agilent ads TQPED metal detector metal detector schematic GaAs 0.15 um pHEMT agilent pHEMT transistor
Contextual Info: Pre-Production Process TQPED 0.5 um E/D pHEMT Foundry Service Features Metal 2 - 4um Metal 2 Dielectric Dielectric Metal 1 - 2um Metal 1 Metal 1 • • • • • Dielectric NiCr MIM Metal Metal 0 Nitride N+ Pseudomorphic Channel MIM Capacitor E-Mode / D-Mode

DIODE SD51

Abstract: 12v zener diode JEDEC 1N SD51
Contextual Info: 1N6097 1N6098 SD51 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers . . . using the platinum barrier metal in a large area metal-to-siiicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

DIODE SD51

Abstract: 5817 SOD-123 bly 83 Motorola Switchmode SD51
Contextual Info: 1N6097 1N6098 SD51 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers . . . using the platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

Contextual Info: SB16-100MA SB16-100AM SB16-100RM SEME LAB MECHANICAL DATA Dimensions in mm DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI–REL APPLICATIONS FEATURES • HERMETIC TO220 METAL PACKAGE • ISOLATED CASE • SCREENING OPTIONS AVAILABLE TO220 METAL PACKAGE

L279

Abstract: l6112 L1915
Contextual Info: Metal Package LEDs Metal package LEDs assure high reliability These infrared emitting diodes are hermetically sealed in a metal package that offer high reliability. The L2791 and L7560 series use a GaAlAs element with a microball lens directly cemented to

Rf detector HSMS 8202

Abstract: Waveform Clipping With Schottky schottky diode hsms8202 HSMP-2810 A7 diode schottky HSMP 2800 hsms2827 SCHOTTKY CROSS REFERENCE very high current schottky diode HSMP-281B
Contextual Info: Applications Information Schottky Diode Fundamentals The Schottky diode is a rectifying metal-semiconductor contact formed between a metal and n-doped or p-doped semiconductor. When a metal-semiconductor junction is formed, free electrons flow across the junction from the

Contextual Info: SB16-100MA SB16-100AM SB16-100RM SEME LAB MECHANICAL DATA Dimensions in mm DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI–REL APPLICATIONS FEATURES • HERMETIC TO220 METAL PACKAGE • ISOLATED CASE • SCREENING OPTIONS AVAILABLE TO220 METAL PACKAGE

circuit diagram of 60 LED bulbs in 230v

Abstract: 48V dc supply FROM 415VAC led lamp 230v simple circuit diagram 230v led lamp in watts circuit diagram VDE0660 led lamp 230v circuit diagram 415vac CIRCUIT DIAGRAM airpax 24v ac 230v operating power led driver ckt diagram 24V-415V
Contextual Info: Control Switches and Signaling Devices 22.5 mm Metal Series Control Switches and Signaling Devices, 22.5mm Metal Series 292 Non-Illuminated Operators, 22.5mm Metal Series 294 Illuminated Operators, 22.5mm Metal Series 296 Pilot Lights and Lens Assemblies,

M 4 3171 opto

Abstract: 9571 gh opto 3171 MBR6545 3171 opto SOT223 6 pin
Contextual Info: MOTOROLA MBR6535 MBR6545 SEMICONDUCTOR TECHNICAL DATA MBR6545 is a Motorola Preferred Device Switchmode Power Rectifiers . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.

Microwave power GaAs FET data

Abstract: TGA4510-EPU TGC1430F-EPU TGC1452-EPU pHEMT fet ft 25 GHZ
Contextual Info: 0.25-µm mmW pHEMT 3MI Process Data Sheet PROTECTIVE OVERCOAT 4.0 µm METAL 2 2.0 µm METAL 1 2000 Å NITRIDE 2 MIM METAL 500 Å NITRIDE 1 0.75 µm METAL 0 TaN RESISTOR 500 Å NITRIDE 0 T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE

640 t fet

Abstract: fet ft 20 GHZ fet ft 25 GHZ
Contextual Info: 0.25-µm XKu pHEMT 3MI Process Data Sheet PROTECTIVE OVERCOAT 4.0 µm METAL 2 2.0 µm METAL 1 2000 Å NITRIDE 2 MIM METAL 500 Å NITRIDE 1 0.75 µm METAL 0 TaN RESISTOR 500 Å NITRIDE 0 T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE

diode sy 164 dl

Abstract: diode sy 164 02N2222 b6045
Contextual Info: MOTOROLA MBR6035 MBR6045 • SEMICONDUCTOR TECHNICAL DATA Switchm ode Power Rectifiers MBR6045 Is a Motorola Preferred Device . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.

HBT transistor

Abstract: TQHBT3 5PAE HBT 01 05G schematic mans gummel
Contextual Info: Production Process TQHBT3 InGaP HBT Foundry Service Features • • Metal 2 - 4um • Dielectric • • Metal 1 - 2um Metal 1 - 2um Dielectric E B C Emitter MIM NiCr B Base Collector Metal 0 C • • • Sub Collector Isolation Implant Buffer & Substrate

D1010

Abstract: pspice model gate driver
Contextual Info: Production Process TQHiP Power MESFET Foundry Service Features Air Bridge - 4um • • Metal 1 Metal 1 – 2 um NiCr MIM Metal Metal 0 N+ N+ Isolation Implant N-/P- Channel D MESFET MIM Capacitor • • • • NiCr Resistor Semi-Insulating GaAs Substrate

HBT transistor

Abstract: gummel
Contextual Info: Production Process TQHBT InGaP HBT Foundry Service Features • Metal 2 - 4um • • • • Dielectric Metal 1 - 2um Metal 1 - 2um Dielectric E B C Emitter MIM NiCr B Base Collector Metal 0 C • Sub Collector Isolation Implant • Buffer & Substrate TQHBT Process Cross-Section

rca 2n3375

Abstract: 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor
Contextual Info: RF Power Transistors Featuring “overlay” Construction For HF-VHF-UHF Microwave Applications M olded-Silicone Hermetic Hermetic Hermetic Plastic Package Ceramic-Metal Ceramic-Metal Strip-L. Package Coaxial Package Small Ceramic-Metal Coaxial Package (Large)

Contextual Info: MBRAF360T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

DIODE B36

Abstract: part marking b36 diode Schottky Diode B36 marking B36 B36 Schottky Diode 1B marking semiconductor b36 b36 surface mount diode
Contextual Info: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

marking B13 diode SCHOTTKY

Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay