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    MESFET S PARAMETER DATA SHEET Search Results

    MESFET S PARAMETER DATA SHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D
    		Murata Manufacturing Co Ltd Data Line Filter, PDF
    54HC152J/B
    		Rochester Electronics LLC 54HC152 - 8 to 1 Line Data Selectors/Multiplexers PDF Buy
    54LS298/BEA
    		Rochester Electronics LLC 54LS298 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH STORAGE - Dual marked (M38510/30909BEA) PDF Buy
    54S153/BEA
    		Rochester Electronics LLC 54S153 - DATA SEL/MULTIPLEXER, DUAL 4-INPUT - Dual marked (M38510/07902BEA) PDF Buy
    54F257/BEA
    		Rochester Electronics LLC 54F257 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH 3-STATE OUTPUTS - Dual marked (M38510/33906BEA) PDF Buy

    MESFET S PARAMETER DATA SHEET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor NEC D 882 p

    Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor transistor NEC D 587 IMT-2000 NES1823P-100 615t 2C156
    Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear


    Original     		NES1823P-100 NES1823P-100 IMT-2000 transistor NEC D 882 p nec d 882 p datasheet nec d 882 p nec d 882 p transistor transistor NEC D 587 615t 2C156 PDF

    KGL4205

    Abstract: D flip flop IC
    Contextual Info: DATA SHEET O K I G a A s P R O D U C T S KGL4205 10-Gbps D-Flip Flop IC 0.2µm Gate Length GaAs MESFET Technology February 2000 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––


    Original     		KGL4205 10-Gbps KGL4205 10-GHz 24-pin D flip flop IC PDF

    T flip flop IC

    Abstract: KGL4216 t-flip flop ic 12 V T flip flop IC
    Contextual Info: DATA SHEET O K I G a A s P R O D U C T S KGL4216 10-Gbps T-Flip Flop IC 0.2µm Gate Length GaAs MESFET Technology February 2000 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––


    Original     		KGL4216 10-Gbps KGL4216 11-GHz. 24-pin T flip flop IC t-flip flop ic 12 V T flip flop IC PDF

    exor

    Abstract: KGL4203
    Contextual Info: DATA SHEET O K I G a A s P R O D U C T S KGL4203 10-Gbps EXOR/NOR IC 0.2µm Gate Length GaAs MESFET Technology February 2000 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––


    Original     		KGL4203 10-Gbps KGL4203 10-GHz 24-pin exor PDF

    KGL4208

    Abstract: KGL4209 KGL4210
    Contextual Info: DATA SHEET O K I G a A s P R O D U C T S KGL4208/KGL4209/KGL4210 10-Gbps GaAs Frequency Divider ICs February 2000 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––


    Original     		KGL4208/KGL4209/KGL4210 10-Gbps KGL4208, KGL4209, KGL4210 KGL4208 KGL4209 PDF

    2N3904

    Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM
    Contextual Info: 19-3985; Rev 0; 2/06 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A


    Original     		MAX11014/MAX11015 MAX11014 MAX11015 625mV transistors56L MAX11014/MAX11015 2N3904 MAX11014BGTM MAX11015BGTM PDF

    62095

    Contextual Info: DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are.power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal'input and output matching enables guaranteed performance to be achieved with


    OCR Scan     		NEZ1011-8E, NEZ1414-8E NEZ1011-8E NEZ1414-8E 62095 PDF

    99419

    Contextual Info: _ DATA SHEET_ _ N-CHANNEL GaAs MESFET NEZ1011-4E, NEZ1414-4E 4W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ101.1-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with


    OCR Scan     		NEZ1011-4E, NEZ1414-4E NEZ101 NEZ1414-4E NEZ1011-4E) NEZ1414-4E) 99419 PDF

    SW-243

    Contextual Info: Reflective GaAs SP4T Switch DC - 4 GHz Features • • • • SW-243 V3 Functional Schematic Low Insertion Loss: 0.7 dB Typical Fast Switching Speed: 4 nS Typical Ultra Low DC Power Consumption Small Package Size: 0.250” Square Description M/A-COM’s SW-243 GaAs MMIC SP4T switch is


    Original     		SW-243 SW-243 PDF

    MAAPGM0035-DIE

    Abstract: c-band 50 Watt power amplifier A 3020 8 pin
    Contextual Info: RO-P-DS-3020 - - MAAPGM0035-DIE 1.6W S/C-Band Power Amplifier 2.5–5.5 GHz Preliminary Information Features ♦ ♦ ♦ ♦ 2.5-5.5 GHz GaAs MMIC Amplifier 2.5-5.5 GHz Operation 1.6 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation


    Original     		RO-P-DS-3020 MAAPGM0035-DIE MAAPGM0035-Die c-band 50 Watt power amplifier A 3020 8 pin PDF

    NEC 2933

    Abstract: 2912 nec NEC 2705 72248 NEC 2705 L 107
    Contextual Info: DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high . output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with


    OCR Scan     		NEZ1011-2E, NEZ1414-2E NEZ1011-2E NEZ1414-2E NEZ1011-2E) NEZ1414-2E) NEC 2933 2912 nec NEC 2705 72248 NEC 2705 L 107 PDF

    MAAPGM0005-DIE

    Contextual Info: RO-P-DS-3035 - - MAAPGM0005-DIE 200 mW Ku-Band Power Amplifier 12.0-19.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ 12.0-19.0 GHz GaAs MMIC Amplifier 12.0 to 19.0 GHz Operation 200 Milliwatt Saturated Output Power Level Single Bias Operation 5-8V


    Original     		RO-P-DS-3035 MAAPGM0005-DIE MAAPGM0005-Die PDF

    smd transistor marking cf

    Abstract: transistor smd CF F 739 DC cf739 Q62702-F1215 F1215 CF 309 CF MARKING CODE gaas fet marking a MARKING CF
    Contextual Info: GaAs FET CF 739 Data Sheet • • N-channel dual-gate GaAs MESFET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,


    Original     		OT-143 Q62702-F1215 P-SOT143-4-1 EHT07329 GPS05559 smd transistor marking cf transistor smd CF F 739 DC cf739 Q62702-F1215 F1215 CF 309 CF MARKING CODE gaas fet marking a MARKING CF PDF

    MAAPGM0028-DIE

    Contextual Info: RO-P-DS-3015 - - MAAPGM0028-DIE 0.5W S/C-Band Power Amplifier 2.0-8.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ 2.0-8.0 GHz GaAs MMIC Amplifier 2.0 - 8.0 GHz Operation 0.5 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation


    Original     		RO-P-DS-3015 MAAPGM0028-DIE MAAPGM0028-Die PDF

    bc 574

    Abstract: bc 574 transistor GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz MASW4030G sharp reflective application
    Contextual Info: GaAs SPDT Switch DC - 4.0 GHz MASW4030G V3 Features • • • • • • Pad Layout Absorbtive or Reflective Excellent Intermodulation Products Excellent Temperature Stability Fast Switching Speed: 3 nS Typical Ultra Low DC Power Consumption Independent Bias Control


    Original     		MASW4030G MASW4030G bc 574 bc 574 transistor GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz sharp reflective application PDF

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor RF2123 TA0012 HBT transistor gsm cellular power amplifier trw rf transistors
    Contextual Info: TA0012   TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier         efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain GSM power amplifier IC is ideal for maximizing talk time – a key


    Original     		TA0012 RF2123: RF2123 16-lead trw RF POWER TRANSISTOR trw rf transistor TA0012 HBT transistor gsm cellular power amplifier trw rf transistors PDF

    P180

    Abstract: RO-P-DS-3053 MAPCGM0005-DIE
    Contextual Info: RO-P-DS-3053 - - MAPCGM0005-DIE 6-Bit Digital Phase Shifter 7.0-12.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ ♦ 7.0-12.0 GHz GaAs MMIC Phase Shifter 6 Bit Digital Phase Shifter 7.0-12.0 GHz Operation 360º Coverage, LSB = 5.6º TTL Control Inputs


    Original     		RO-P-DS-3053 MAPCGM0005-DIE MAPCGM0005-Die P180 PDF

    4304

    Abstract: P35-4304-000-200 NN12
    Contextual Info: Data sheet 6 Bit Digital Attenuator, 0.5 - 16GHz The P35-4304-000-200 is a high performance Gallium Arsenide monolithic 6 bit digital attenuator offering an attenuation range of 31.5dB in 0.5dB steps. It is suitable for use in broadband communications, instrumentation and


    Original     		16GHz P35-4304-000-200 P35-4304-000-200 462/SM/02427/200 4304 NN12 PDF

    Oki modulator

    Abstract: Oki EA modulator oki cross DC-10 KGL4115F Oki ea modulator 10 gbps
    Contextual Info: DATA SHEET O K I G a A s P R O D U C T S KGL4115F 10-Gbps EA Modulator Drive IC June 2000 –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– • ■


    Original     		KGL4115F 10-Gbps KGL4115F 20-pin 1-800-OKI-6388 Oki modulator Oki EA modulator oki cross DC-10 Oki ea modulator 10 gbps PDF

    TIA AGC application note

    Abstract: ATA06212D1C ATA06212A ATA06212AD1C
    Contextual Info: ATA06212A AGC Transimpedance Amplifier PRELIMINARY DATA SHEET- Rev 1.2 FEATURES • Single +5 Volt Supply • Automatic Gain Control • - 34 dBm Sensitivity • 0 dBm Optical Overload • 425 MHz Bandwidth Vdd2 Vdd1 GND GND APPLICATIONS • SONET OC-12/SDH STM-4 622 Mb/s


    Original     		ATA06212A OC-12/SDH ATA06212A OC-12/STM-4 TIA AGC application note ATA06212D1C ATA06212AD1C PDF

    TGF1350

    Contextual Info: Product Data Sheet May 17, 2001 Discrete MESFET TGF1350-SCC Key Features and Performance • • • • • • 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GHz 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GHz All-gold Metallization for High Reliability


    Original     		TGF1350-SCC TGF1350-SCC 0007-inch TGF1350 PDF

    VSWR Bridge

    Contextual Info: 8 Watt Bridge Power Amplifier MAAPSM0011 5.7 - 5.9 GHz Advance V3A MAAPSM0011 Functional Schematic Features • • • • 802.11a Ideal for Data Bridge Applications 38 dBm Saturated Power PSAT @ 7V 3% EVM @ POUT = 29 dBm, Dissipated Power (Pdiss) = 13 W using 54 Mbps OFDM Signal


    Original     		MAAPSM0011 VSWR Bridge PDF

    AT-255

    Abstract: AT-255TR M513 10ghz variable attenuator
    Contextual Info: 3 Volt Voltage Variable Attenuator 25 dB, DC-2.5 GHz Features • • • • • AT-255 V7 Functional Schematic 1 Single Voltage Control: 0 to -3 Volts 25 dB Attenuation Range at 0.9 GHz Low DC Power Consumption SOT-25 Plastic Package Tape and Reel Packaging Available


    Original     		AT-255 OT-25 AT-255 OT-25 AT-255TR M513 10ghz variable attenuator PDF

    M513

    Abstract: SW-393 SW-393SMB SW-393TR
    Contextual Info: GaAs SPST High Isolation Terminated Switch, 0.5 - 2.0 GHz SW-393 V 3.00 Features SOIC-8 ! Terminated RF Output ! High Isolation: 42 dB up to 2 GHz ! Single Positive Control ! CMOS Compatible Logic ! Low Cost SOIC 8 Plastic Package Description M/A-COM’s SW-393 is a GaAs monolithic SPST


    Original     		SW-393 SW-393 SW-393TR SW-393SMB M513 SW-393SMB SW-393TR PDF