MESFET LNB Search Results

TQP200002

Abstract: TQP200002 ESD Protection Device
Contextual Info: TQP200002 Advanced Data Sheet ESD Protection device Applications: Description: The TQP200002 ESD protection device is fabricated in GaAs MESFET technology and has been especially developed for high frequency applications. It delivers bidirectional protection with very low leakage currents

TQP200002

Abstract: TQP200002 ESD Protection Device
Contextual Info: TQP200002 Advanced Data Sheet ESD Protection device Applications: Description: The TQP200002 ESD protection device is fabricated in GaAs MESFET technology and has been especially developed for high frequency applications. It delivers bidirectional protection with very low leakage currents

Contextual Info: APPLICATION NOTE - AKD SERIES DOWNCONVERTERS AKD Series KU-Band GaAs MMIC Downconverters Surface Mount Devices Rev 7 Introduction The AKD Series of downconverters is intended for use in the outdoor LNB portion of DBS (Direct Broadcast Satellite) systems. These MMIC downconverters are fabricated using the ANADIGICS’ 0.5 pm GaAs MESFET

IR0208

Abstract: IR0218LC1 ir020 IR0204LC2 IR0812LC2
Contextual Info: IMAGE REJECTION MIXERS AND I/Q DEMODULATORS IR IF HYBRID VCC IR IR Image Rejection MODEL NUMBER IRF MESFET Image Rejection FREQUENCY RANGE IF RF AND LO GHz (GHz) (Note 1) NOMINAL LO POWER (dBm) (Note 2) IRB Biasable Image Rejection CONVERSION LOSS (dB) (Max.)

VP12* texas

Abstract: STD960 TGA1342-EPU VP12 VP22 Reliability VP12 3378M
Contextual Info: Advance Product Information 2 -20 GHz Wideband AGC Amplifier TGA1342-EPU September 13, 2001 Key Features and Performance • • • • • • 0.5 um MESFET Technology 9 dB Nominal Gain 3.5 dB NF Typical Midband 17.5 dBm Nominal Pout @ P1dB Bias 5-8V @ 60 mA

Contextual Info: Advance Product Information 2 -20 GHz Wideband AGC Amplifier TGA1342-EPU September 13, 2001 Key Features and Performance • • • • • • 0.5 um MESFET Technology 9 dB Nominal Gain 3.5 dB NF Typical Midband 17.5 dBm Nominal Pout @ P1dB Bias 5-8V @ 60 mA

IR022

Abstract: IR0618LC2
Contextual Info: IM AGE REJECTION M IX E R S A N D l / Q DEMODULATORS SECTION 2 IR Image Rejection MODEi NUMBER FREQUENCY RANGE IE HF AND LO i GHzi GHz Noie 1 IRF MESFET Image Rejection NOMINAL LO POWER KIBril iNnie ? IRB Biasable Image Rejection CONVERSION LOSS itBi i Max

mesfet lnb

Abstract: NE722S01 NE722S01-T1 NE722S01-T1B1
Contextual Info: C TO X BAND N-CHANNEL GaAs MESFET NE722S01 OUTLINE DIMENSION FEATURES • HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • OUTPUT POWER (at 1 dB comprehension): 15 dB TYP at f = 12 GHz 2.0 – 0.2 • LOW NOISE/HIGH GAIN:

mesfet lnb

Abstract: NE72118 NE72118-T1 NE72118-T2 13000 transistor
Contextual Info: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz • GATE LENGTH: Lg = 0.8 µm (recessed gate) 2.1 ± 0.2 • GATE WIDTH: Wg = 330 µm

SG 2368

Abstract: sg 2534 DELTA 0431 180/TTK SG 2368
Contextual Info: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz • GATE LENGTH: Lg = 0.8 • GATE WIDTH: Wg = 330 jim • 4 PINS SUPER MINI MOLD

transistor mesfet

Abstract: mesfet lnb NE72118 NE72118-T1 NE72118-T2 lnb schematic 12-GHz
Contextual Info: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm (1.3) 0.3 -0.05 +0.1 +0.1 4 1 PIN CONNECTIONS 1. Source 2. Gate 3. Source 4. Drain 0 to 0.1 NEC's stringent quality assurance and test procedures ensure

817 CN

Contextual Info: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz PACKAGE OUTLINE 18 ± 0.2 GATE LENGTH: Lg = 0.8 \im (recessed gate 2.1 GATE WIDTH: Wg = 330 \im

TGF1350

Contextual Info: Product Data Sheet May 17, 2001 Discrete MESFET TGF1350-SCC Key Features and Performance • • • • • • 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GHz 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GHz All-gold Metallization for High Reliability

k 1117 3k

Abstract: 317MAG
Contextual Info: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: PACKAGE OUTLINE 18 Gs = 5.5 dB T Y P a t f = 12 GHz LOW PHASE NOISE: 2.1 ± 0.2 -110 dBc/Hz TYP at 100 KHz off set at f = 11 GHz

FMCW Radar

Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
Contextual Info: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.

TQP200002 ESD Protection Device

Contextual Info: TQP200002 ESD Protection Device Applications •    Cellular Handsets Cordless Phone LNBs CATV set top boxes Product Features         Functional Block Diagram Snap-Back ESD protection Low clamp voltages 15 or 30 V Low trigger voltages 18, 25, or 41 V

raytheon dbs

Abstract: RMM9060-53
Contextual Info: Raytheon Electronics \ h - 950-2150 MHz GaAsMMIC DBS Twin IFSwitch Amplifier The Raytheon RMM9060-53 is intended for use in Direct Broadcast Satellite DBS applications within the Low Noise Block (LNB) downconverter for systems where at least two LNB outputs are required. It offers two

IR0104

Abstract: IR0208
Contextual Info: IMAGE REJECTION PRODUCTS This detailed image rejection mixer catalog summarizes the important input, output and transfer characteristics of these devices. A short-form catalog is also available, upon request, that describes three other special mixer product groups: double-sideband mixer

Contextual Info: PRELIMINARY DATA SHEET_ GaAs INTEGRATED CIRCUIT ¿XPG181GR GaAs MMIC DBS Twin IF Switch DESCRIPTION The ^¡PG181GR is intended for use in Direct Broadcast Satellite DBS applications within the Low Noise Block (LNB) down-converter for systems where at least two LNB outputs are required.

mixer lnb

Abstract: 26 GHz mixer AR34B09D
Contextual Info: MILLIMETER-WAVE PRODUCTS This detailed millimeter-wave mixer product catalog summarizes the important input, output and transfer characteristics of these devices. A short-form catalog is also available upon request, that describes three other special mixer product groups: doublesideband mixer products, single-sideband modulator products, and image rejection products. The short-form catalog is also

C10535E

Abstract: VP15-00-3 upg182
Contextual Info: PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT µPG182GR GaAs MMIC DBS Twin IF Switch Amplifier DESCRIPTION The µPG182GR is intended for use in Direct Broadcast Satellite DBS applications within the Low Noise Block (LNB) down-converter for systems where at least two LNB outputs are required.

DIELECTRIC COAXIAL RESONATOR

Abstract: MMIC Downconverter ku band AKD2400 design dielectric resonator oscillator AKD2705
Contextual Info: APPLICATION NOTE - AKD SERIES DOWNCONVERTERS AKD Series KU-Band GaAs MMIC Downconverters Surface Mount Devices Rev 7 Introduction The AKD Series of downconverters is intended for use in the outdoor LNB portion of DBS (Direct Broadcast Satellite) systems. These MMIC downconverters are fabricated using the ANADIGICS' 0.5

Mixers

Abstract: SME0104LC1B IRF67 SSB Modulator Direction Finding
Contextual Info: TABLE OF CONTENTS M O D E L PREFIX UNI QUE E X A M P L E PAGE NO. Single-, double- and triple­ balanced mixers for double­ sideband, up/down conversion, demodulation DB, DM, FDM, SBB, SBE, SBW, TB, TBR.TIM Model: TB0440LW1 Triple balanced LO/RF: 4 to 40 GHz

C10535E

Abstract: VP15-00-3 mesfet lnb IC 16pin log amplifier
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG181GR GaAs MMIC DBS Twin IF Switch DESCRIPTION The µPG181GR is intended for use in Direct Broadcast Satellite DBS applications within the Low Noise Block (LNB) down-converter for systems where at least two LNB outputs are required.