MD 243 DIODE Search Results

disadvantages of resistor

Abstract: an 3080 variable resistor 50k DS1859 Laser power supply abstract MAX3740A MAX4245 Schematic of 1K digital potentiometer MD 243 diode
Contextual Info: Maxim > App Notes > Communications Circuits Digital Potentiometers Optoelectronics Keywords: laser, laser power, laser power control, laser control circuit, laser power circuit, power control for laser Aug 24, 2004 APPLICATION NOTE 3080 Accurate Power Control of the MAX3740A Laser Driver

triangular generator ic

Abstract: BH6505K wave Generator IC
Contextual Info: Optical disc ICs PWM driver for CD and MD players BH6505K The BH6505K is a 4-channel PWM driver designed for CD and MD player motor and actuator drives. The power MOSFET output stage allows for applications with low power consumption. This IC also has a charge pump circuit and standard operational amplifier needed for power MOSFET gate drives , and so supports a wide spectrum of applications.

GE H21A1

Abstract: h21a io 49
Contextual Info: G E SOLID STATE □1 DE I 3 0 7 5 0 0 1 0011760 Optoelectronic Specifications T-Ml-73 1mm Aperture Photon Coupled Interrupter Module H21A1,H21A2,H21A3 The GE Solid State H21A Interrupter Module is a gallium arse­ nide infrared emitting diode coupled to a silicon phototransistor in

Contextual Info: • MbflbS2b GGGlbbS 307 M I X Y niXYS MCC56 ITav=2 x 60 A MCD56 VRRM=400-1800 v Thyristor Modules Thyristor/Diode Modules 500 700 900 1300 1500 1700 1900 i 1 > > > Vw V mm V 400 600 800 1200 1400 1600 1800* Type Version 1 B MCC56-06ÌO1 MCC56-08ÌO1 MCC56-12io1

G 50N60

Abstract: 50N60 igbt 100a 50n50 IXGH50N60B
Contextual Info: HiPerFAST IGBT with Diode V V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C 2 5 500 V 75 A 600 V 75 A ^ C E s a t 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 vCES V C GR VGES VGEM 'c o ' cm 50N60 Tj = 25°C to 150°C

yx 861

Contextual Info: P6SMB6V8 . P6SMB440A P6SMB6V8C . P6SMB300CA 600 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMB/DO-214AA Voltage 6.8 to 440 V Power 600 W / ms 0.15±0.1 2.2±0.3 0.2 -0.05 +0.1

LM-035VRA

Abstract: str 5763 LUM-512 LM035L SPR-325MVW SPR-505MVW SLR-40M LA-101LN
Contextual Info: Light Emitting Diodes LED Product Tables LED Product Tables • C h ip LEDs S M L-010 SML-020 S M L-210 S M L-310 series GaAIAs SML01 0LT /JT — SML2 1 0LT /JT SML310LT/JT Transparent clear GaAsP on GaP SML-01 OVT — SM L-210VT SML-31OVT O range 610nm

LA603V

Abstract: LM035L LB-402D LB-402DA LR-40M LA-603VP SLR-54-MG 020MVT LB-402VK LD404V
Contextual Info: t- - i i s — Y / Light Emitting Diodes • + -7 x ^ V ^ > t.M L E D SM L-010 y 'J - X * 3 tfe a±m m f S M L-020 ->'J - X * 3 tttÜ 4 SM L-010JT S » Ä *6 (660nm ) Ä ife iS W * fe (650nm ) Ü fe S iŒ fe - SM L-010U T — G aAsP on GaP SM L-010D T

Contextual Info: TVS DIODES P6SMBJ Series — 600 Watt Surface Mount P6SMBJ Series Features • 600 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor •

700v 4A mosfet

Abstract: sss6n70a
Contextual Info: SSS6N70A A d v a n c e d Power MOSFET FEATURES bvdss Low RDS on : 1.552 Ct (Typ.) 1.8 Q > • ^DS(on) = II Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 m A (Max.) @ Vos = 700V

Contextual Info: □ IXYS IXGK 50N60AU1 Hi Per FAST IGBT with Diode V C ES I C 25 VC E sat Combi Pack tn = = = = 600 V 75 A 2.7 V 275 ns ?C G OE Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20

DM 311 BG 40

Abstract: TVS AE
Contextual Info: TVS Diodes P6SMBJ Series — 600 Watt Surface Mount P6SMBJ Series Features • RoHS Compliance designated by suffix “F” • 600 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction

Contextual Info: Optical disc ICs PWM Driver for CD and MD Players BH6505K The BH 6505K is a 4-channel PW M driver designed for CD and MD player m otor and actuator drives. The power M O SFET output stage allows for applications with low power consumption. This 1C also has a charge pump circuit

TO264AA

Abstract: IXFK90N20Q IXFK90N20QS TO-264-aa
Contextual Info: ADVANCED TECHNICAL INFORMATION HiPerFETTM Power MOSFETs IXFK90N20Q IXFK90N20QS Q Class Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C

72N2

Abstract: diode 253 SMD-264 TO-264-aa 80N20
Contextual Info: OIXYS Preliminary data vDSS HiPerFET Power MOSFETs ^D25 RDS on 200 V 72 A 35 mQ 200 V 80 A 30 mQ t < 200 ns IXFK72N20 IXFK80N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t„ Symbol Test Conditions Maximum Ratings VDSS VDGR Tj = 25°C to 150°C

IRFP450FI

Abstract: GC507 7W53 GC508 IRFP450 C18070 IRFW450 IRFP450F
Contextual Info: 7 ^ 2 3 7 Q 0 M 5 7 4 b 1=17 « S G T H SGS-THOMSON ¡Li IT^MD éS IRFP450FI IRFW450 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTORS PRELIMINARY DATA TYPE IRFP450 IRFP450FI IRFW450 • . ■ . V dss R d S(o ii Id 500 V 500 V 500 V < 0.4 n < 0.4 O

IRFP450FI

Abstract: C18070
Contextual Info: 7 ^ 2 3 7 Q 0 M 5 7 4 b 1=17 « S G T H SGS-THOMSON ¡Li IT^MD éS IRFP450FI IRFW450 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTORS PRELIMINARY DATA TYPE IRFP450 IRFP450FI IRFW450 • . ■ . V dss R d S(o ii Id 500 V 500 V 500 V < 0.4 n < 0.4 O

Contextual Info: P6SMB6V8 . P6SMB300A P6SMB6V8C . P6SMB250CA 600 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMB/DO-214AA Voltage 6.8 to 300 V Power 600 W / ms R • Glass passivated junction

Contextual Info: P6SMB6V8 . P6SMB300A P6SMB6V8C . P6SMB250CA 600 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMB/DO-214AA Voltage 6.8 to 300 V Power 600 W / ms R • Glass passivated junction

Contextual Info: P6SMB6V8 . P6SMB300A P6SMB6V8C . P6SMB250CA 600 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMB/DO-214AA Voltage 6.8 to 300 V Power 600 W / ms R • Glass passivated junction

yx 861

Abstract: yx 5103 yx 861 a
Contextual Info: P6SMB6V8 . P6SMB440A P6SMB6V8C . P6SMB250CA 600 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMB/DO-214AA Voltage 6.8 to 440 V Power 600 W / ms 0.15±0.1 2.2±0.3 0.2 -0.05 +0.1

Contextual Info: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 85 A RDS on) max = 36 m Low RDSon, high VDSS Superjunction MOSFET D TO-264 G G  D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C EAS

85N60C

Abstract: UPS SIEMENS E72873 ID100
Contextual Info: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 85 A RDS on) max = 36 mΩ Low RDSon, high VDSS Superjunction MOSFET TO-264 D G G  D S E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C

Contextual Info: SM8610BV レーザースイッチングドライバ IC NIPPON PRECISION CIRCUITS INC. •概要 SM8610BV はポータブル CD/MD プレーヤのレーザー駆動 IC です。従来、ポータブル CD/MD プレーヤの レーザー駆動制御は定電流方式で行われていましたが、消費電力が大きくバッテリー駆動時間に制限を与えて