MCP 67 MV- A2 Search Results

JESD21-C

Abstract: E8870DH JESD79 mrf 245 E8870 JESD-21C 567-Ball
Contextual Info: Intel 82870DH DDR Memory Hub DMH Datasheet Product Features • ■ ■ ■ ■ Two independent DDR DIMM channels per DMH. — 4 DIMMs per DDR Channel. — Registered PC1600 DDR DIMMs. Write Buffers to minimize large turnaround times. Pass through architecture for Read and

PL127J

Abstract: Pl064j PL032J S71PL064JA0BAW0B S71PL064JA0 S71PL064JA0BAW07 S71PL064JA0BFW07 S71PL064JA0BFW0B mcp79
Contextual Info: S71PL064JA0 Stacked Multi-Chip MCP Flash Memory and pSRAM 64 Megabit (4M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Flash Memory and 16 Megabit (1M x 16-bit) CMOS Pseudo Static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS MCP Features „ Cycling endurance: 1 million cycles per sector

SAMSUNG MCP

Abstract: KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm
Contextual Info: Preliminary MCP MEMORY KAA00BB07M-DGUV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM / 256M Bit (4Mx16x4Banks) Mobile SDRAM Revision History Revision No. History 0.0 Draft Date Initial draft - 256Mb NAND C-Die_Ver 2.6

Flash MCp nand DRAM 107-ball

Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
Contextual Info: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM

SAMSUNG MCP

Abstract: 7a7l MCP MEMORY K5D1G58KCM-D090 nand sdram mcp
Contextual Info: Preliminary MCP MEMORY K5D1G58KCM-D090 Document Title Multi-Chip Package MEMORY 1G Bit 128Mx8 Nand Flash / 256M Bit (2Mx32x4Banks) Mobile SDRAM Revision No. History Draft Date 0.0 Initial issue. - 1Gb NAND A-Die_ Ver 0.3 - 256Mb Mobile SDRAM F-Die_Ver 1.1

SAMSUNG MCP

Abstract: Flash MCp nand DRAM 107-ball K5D5657DCM-F015 SAMSUNG 256Mb mcp Qualification Reliability dq15d samsung mcp 107-ball
Contextual Info: Preliminary MCP MEMORY K5D5657DCM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.0 June 2003 Preliminary MCP MEMORY K5D5657DCM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM

SAMSUNG MCP

Abstract: F407 KBE00D002M-F407 samsung "nor flash" sensing UtRAM Density 137FBGA
Contextual Info: Advance Preliminary MCP MEMORY KBE00D002M-F407 Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 128M Bit (2Mx16x4Banks) Mobile SDRAM*2 Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. - 512M NAND DDP C-Die_ ver 1.0

MCP 67 MV- A2

Abstract: SAMSUNG MCp samsung "nor flash" sensing nand mcp samsung ka SAMSUNG mcp Reliability spec Product Selection Guide samsung 2013 MCP NAND, DRAM, NOR SAMSUNG 256Mb mcp Qualification Reliability 14CLK UtRAM Density
Contextual Info: KAA00B209M-TGxx MCP MEMORY Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash/32M Bit(2Mx16) UtRAM/128M Bit(2Mx16x4Banks) MobileSDRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. January 15, 2002 Advance 0.1

kbe00f003m

Abstract: SAMSUNG MCP Flash MCp nand DRAM 107-ball NAND FLASH DDP samsung mcp 107-ball d411 KBE00G003M-D411 NNDD512512256256BBFF UtRAM Density MCP 1Gb 512Mb 130
Contextual Info: KBE00G003M-D411 MCP MEMORY NNDD512512256256BBFF NAND 512Mb*2 + Mobile SDRAM 256Mb*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

S29PL129J

Abstract: S71PL129JA0 S71PL129JB0 S71PL129JC0
Contextual Info: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION

Mcp90

Abstract: MCP78 032J mcp68
Contextual Info: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM

Contextual Info: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static

MARVELL PXA 930

Abstract: 88AP320 PXA320 88ap310 88AP300 PXA312 pxa310 88AP303 marvell pxa310 xscale PXA310
Contextual Info: Cover Marvell PXA3xx 88AP3xx Processor Family Electrical, Mechanical, and Thermal Functional Specification PXA30x Processor (88AP300, 88AP301, 88AP302, 88AP303) PXA31x Processor (88AP310, 88AP311, 88AP312) PXA32x Processor (88AP320, 88AP322) Doc. No. MV-S105156-00, Rev. 2.0 Version April 6, 2009 Released

INDEPENDENT INK 73X

Abstract: FTA073 S29JL064H mA109p
Contextual Info: S71JL128HC0/128HB0/064HB0/ 064HA0/064H80 Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and Static RAM/Pseudo-static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features

INDEPENDENT INK 73X

Abstract: FTA073 S29JL064H spansion pdip 32 marking format 3105P
Contextual Info: S71JL128HC0/128HB0/064HB0/ 064HA0/064H80 Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and Static RAM/Pseudo-static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

101110

Abstract: ws256n spansion S29WS064N S29WS128N S29WS256N WS128N 064N
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

M490000030

Abstract: SA158 PDL127 PDL127H PDL129 PDL129H SA139-SA142
Contextual Info: Am49PDL127BH/ Am49PDL129BH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

AM29PDL

Abstract: 70PL254J00BFWA2 70PL254J S29PL127J S70PL254J Spansion s29pl127j 70PL254 mbm29pdl TSOP package tray
Contextual Info: S70PL254J 256 Megabit 16 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Same-die Stack Flash Memory PRELIMINARY Distinctive Characteristics ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES „ Two 128 Mbit Page Mode devices — Page size of 8 words: Fast page read access from

SA266-4

Abstract: S71WS128JB0 S71WS128JC0 S71WS256JC0 S71WS-J FBGA 12x12 TRAY
Contextual Info: S71WS-J Based MCPs Stacked Multi-Chip Product MCP Package-on-Package (PoP) 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this

TLA064

Abstract: S71PL129JC0 S29PL129J S71PL129JA0 S71PL129JB0
Contextual Info: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION

71pl129hb0baw00

Abstract: 71pl127 SA159-SA162 INDEPENDENT INK 73X pl127 PDL127 PDL129H SA-266 71pl129 PDL640G
Contextual Info: S71PL127HB0/S71PL129HB0 Stacked Multi-Chip Package MCP Flash Memory and pSRAM 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2 M x 16-Bit) CMOS Pseudo Static RAM with Page Mode ADVANCE INFORMATION Distinctive Characteristics

71WS256NC0BAIAU

Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics

XPC750

Abstract: Midland G9 Nippon capacitors
Contextual Info: MPC750EC/D Motorola Order Number 3/23/2000 REV. 2.2 Technical Data MPC750A RISC Microprocessor Hardware Specifications This document is primarily concerned with the MPC750, however, unless otherwise noted, all information here applies also to the MPC740. The MPC750 and MPC740 are