MC CAPACITOR Search Results

Contextual Info: Aluminum Electrolytic Capacitors/MC Surface Mount Type Aluminum Electrolytic Capacitors Japan MC V Series: Type: Surface mount type Low profile • Features 85 ¡C 1000Hr Low profile MC ● Lifetime: 85 ûC 1000 h ↑ ■ Recommended Applications 85 ¡C 1000Hr

panasonic snap-in capacitor

Abstract: E CAP 250v 105 K capacitor PANASONIC CASE CODE
Contextual Info: Panasonic Series: Type: Aluminium Electrolytic Capacitors/MC MC TS Snap-in Aluminium Electrolytic Capacitors (Type Snap-in Series MC) Japan Over voltage guaranteed • Features • Lifetime: 105 "C 2000 h • Im proved sa fety for DC overvoltages up to 1.5

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB647 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CB647EFA, MC-458CB647PFA and MC-458CB647XFA are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.

4532

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532CD646 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CD646EF, MC-4532CD646PF and MC-4532CD646XF are 33,554,432 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 128M SDRAM: µPD45128841 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CB647 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CB647EF, MC-4516CB647PF and MC-4516CB647XF are 16,777,216 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 128M SDRAM: µPD45128841 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CA727 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CA727EF, MC-4516CA727PF and MC-4516CA727XF are 16,777,216 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 128M SDRAM: µPD45128841 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532CD647 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CD647EF, MC-4532CD647PF and MC-4532CD647XF are 33,554,432 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 128M SDRAM: µPD45128841 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532CC727 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CC727EF, MC-4532CC727PF and MC-4532CC727XF are 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 128M SDRAM: µPD45128841 are assembled.

mc 082

Abstract: capacitor 0.15 k 100
Contextual Info: Aluminium Electrolytic Capacitors/MC Aluminium Electrolytic Capacitors Type Snap-in Series MC Series: Type: Japan MC TS (Snap-in) Over voltage guaranteed • Features ● Lifetime: 105 ûC 2000 h ● Improved safety for DC overvoltages up to 1.5 times rated working voltage.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CB646 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CB646EF, MC-4516CB646PF and MC-4516CB646XF are 16,777,216 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 128M SDRAM: µPD45128841 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CA726 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CA726EF, MC-4516CA726PF and MC-4516CA726XF are 16,777,216 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 128M SDRAM: µPD45128841 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CA727 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CA727EF, MC-4516CA727PF and MC-4516CA727XF are 16,777,216 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 128M SDRAM: µPD45128841 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532CD647 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE EO Description The MC-4532CD647EF, MC-4532CD647PF and MC-4532CD647XF are 33,554,432 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 128M SDRAM: µPD45128841 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB646 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CB646EFB, MC-458CB646PFB and MC-458CB646XFB are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CA727 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE EO Description The MC-4516CA727EF, MC-4516CA727PF and MC-4516CA727XF are 16,777,216 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 128M SDRAM: µPD45128841 are assembled.

300a 1000v thyristor

Abstract: mc5001 D-68623 1800 IXYS mc 1732 IXYS M2000-200 thyristor
Contextual Info: IXYS Dual Thyristor Module Types MC#500-12io1 to MC#500-18io1 IXYS Date:- 5 Jan, 2004 Data Sheet Issue:- 1 Dual Thyristor Module Types MC#500-12io1 to MC#500-18io1 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1

MC-4532CC726

Abstract: MC-4532CC726EF-A10 MC-4532CC726EF-A80 MC-4532CC726PF-A10 MC-4532CC726PF-A80
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532CC726 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE EO Description The MC-4532CC726EF, MC-4532CC726PF and MC-4532CC726XF are 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 128M SDRAM: µPD45128841 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB647 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description EO The MC-458CB647EFA, MC-458CB647PFA and MC-458CB647XFA are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CB647 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE EO Description The MC-4516CB647EF, MC-4516CB647PF and MC-4516CB647XF are 16,777,216 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 128M SDRAM: µPD45128841 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CB646 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description EO The MC-4516CB646EF, MC-4516CB646PF and MC-4516CB646XF are 16,777,216 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 128M SDRAM: µPD45128841 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB647 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE ★ Description The MC-458CB647EFA, MC-458CB647PFA and MC-458CB647XFA are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.

MC-4532CD646

Abstract: MC-4532CD646EF-A10 MC-4532CD646EF-A80 MC-4532CD646PF-A10 MC-4532CD646PF-A80 MC-4532CD646XF-A10 MC-4532CD646XF-A80
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532CD646 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE EO Description The MC-4532CD646EF, MC-4532CD646PF and MC-4532CD646XF are 33,554,432 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 128M SDRAM: µPD45128841 are assembled.

MC-458CB647XFA-A75

Abstract: MC-458CB647 MC-458CB647EFA-A75 MC-458CB647PFA-A75 PD45128163
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB647 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description EO The MC-458CB647EFA, MC-458CB647PFA and MC-458CB647XFA are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.

MC-4532CD647

Abstract: MC-4532CD647EF-A75 MC-4532CD647PF-A75 PD45128841 45128
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532CD647 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE EO Description The MC-4532CD647EF, MC-4532CD647PF and MC-4532CD647XF are 33,554,432 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 128M SDRAM: µPD45128841 are assembled.