MC 140 TRANSISTOR Search Results

aaf marking sot23-5

Abstract: MCP73832 MCP7383X-2 MCP73831 "Charge Management Controller" marking code e2 sot23-5 DS21984B MCP7383X-5 SOT23 marking code AAR
Contextual Info: MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features: Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%

3DG 130

Abstract: MCP73832 MCP7383X MCP73831 MCP73831T aae sot-23 marking JC51-7 AAK marking code
Contextual Info: MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%

Contextual Info: MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%

P-8CM

Abstract: IC P605 8 pin DIODE P31A "triac protection" overcurrent MOV surge protection circuit diagram p31b DIODE P31B Teccor P0080SC MC marking code diode s4 do-214 P3100EB
Contextual Info: Data Book and Design Guide TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: techsalessidactor@littelfuse.com A Littelfuse company Teccor Electronics is the proprietor of the SIDACtor , Battrax®, and TeleLink®

NTC THERMISTOR 3470

Abstract: SMD MARKING CODE N03 zener diode marking 182 bd 222 smd varistors 1399 GE SMD zener diode AVX BAR code ON THE label SMD MARKING CODE zener diode 501 Midwest Components THERMISTOR ND03N00103J
Contextual Info: AVX NTC Thermistors Contents NTC Thermistors NTC THERMISTORS General Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Application Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

varistors 1399

Abstract: RHODORSIL RC 70 NF13 zener diode reference guide avx nf13 2001 ka 7542 THERMISTORS SCK 016 TH NF13 ntc nb12 diode NK20
Contextual Info: AVX NTC Thermistors Contents NTC Thermistors NTC THERMISTORS General Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Application Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

0f10v

Contextual Info: TELEDYNE COMPONENTS m äT17büa Q0üb577 3 EÒE D F O T O F ET SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR FF 108 G E O M E T R Y 282 • • • • • HIGH SENSITIVITY LOW D A R K CURRENT FAST RESPONSE PHOTOTUBE REPLACEMENT FLAT GLASS TOP FOR EXTERNAL OPTICS

uei 350

Abstract: K 3567 MMBT3568 MMBTA05 MMBTA06 MMBTA42 MMBTA43 mmbt
Contextual Info: Surface Mount Transistors Medium Power—NPN VCER* VCEO V Min V eb o (V) Min MMBT3568 TO-236 (49) 80 60 5 Its MMBT3700 TO-236 (49) 140 Type No. Case Style 80 7 »T Ic e s * C0b *oft NF VCE(SAT) V b E(SAT) Test Process (MHz) @ lc •cBOa VCB hre lc & VCE

MC1460r

Abstract: mc1461 2N3055 series voltage regulator Motorola Mc 1461 MC1561 MC1460 MC1560R 2n3055 voltage regulator MC1560G MC1561R
Contextual Info: MC1560, MC1561 MC1460, MC1461 MOf JOLITHIC . C LT/5 GE REGUL/ TOR P O S I T i 'V'- E - P O W E R - S U P P L Y , , . designed to d eliver c o n tin u o u s load c u rre n t up to 5 0 0 m A w ith o u t use o f an e x te rn a l p ow er transistor. V O LTAG E R E G O LA T O R

BUK455-600B

Abstract: BUK455 SB4030 BUK455-600A 600B BUK455 600B T0220AB 1725R
Contextual Info: Philips Components BUK455-600A BUK455-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended or use in Switched Mode Power Supplies (SMPS , motor control, welding,

2N558B

Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
Contextual Info: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265

TRANSISTOR 1FU

Abstract: BUK444 BUK444-200A BUK444-200B
Contextual Info: PHILIPS INTERNATIONAL bSE 3> • 7110fl2b 0Db3Rtil S3T ■ PHIN Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic full-pack envelope. The device is intended for use in

fr diode

Abstract: DIODE JS.6 P-T0251
Contextual Info: SIEMENS SPD21N05L SPU21N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/df rated • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type Vps b R DS on Package Ordering Code SPD21N05L 55 V

D1407

Abstract: BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406
Contextual Info: BUZ54 PowerMOS transistor N AMER PH IL IP S/ DISCR ET E — QbE D — — • ^53=131 D014717 5 7 31-13 ~ — - July 1987 QUICK REFERENCE DATA PARAMETER sym bo l Drain-source voltage VDS Drain current d.c. Id Total power dissipation Ptot Drain-source on-state resistance

Contextual Info: Provisional Data Sheet No. PD - 9.1716 International IO R Rectifier IRFE9130 dv/dt R A TED J ANTX2N6849U HEXFET TRANSISTOR JANTXV2N6849U JANS2N6849U [REF:M IL-PRF-19500/564] R E P E T IT IV E A V A LA N CH E A N D P-CHANNEL Product Summary -1 OOVolt, 0.30Q, HEXFET

OC171

Abstract: oc44 OC169 OC45 transistor oc44 2S60A The Transistor Manual 2sa GE Transistor Manual
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

2SK1719

Abstract: mos relay 719 irl 5a
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1719 Field Effect Transistor Industrial A p p lic a tio n s Unit in m m Silicon N Channel MOS Type l?-;t-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive

D0447

Abstract: K572 00M4 Scans-00501 BUK572 12VBS
Contextual Info: PHILIPS 5bE INTERNATIONAL D • 711002b 00M4704 DT3 ■ Philips Components_ Datasheet status Preliminary specification date of issue March 1991 Replaces BUK542-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

2SK1112

Abstract: S2-5V relay transistor 2sk1112
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1112 Field Effect Transistor Silicon N Channel MOSType L2-t>MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Fe a tu re s • 4-Volt Gate Drive • Low Drain-Source ON Resistance

IRFF130

Abstract: IRFF131 IRFF132 IRFF133 C 3259
Contextual Info: -Standard Power MOSFETs IRFF130, IRFF131, IRFF132, IRFF133 File Num ber 1564 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

LDR orp 60

Contextual Info: TOSHIBA Discrete Sem iconductors 2SJ240 Field Effect Transistor Industrial Applications Silicon P Channel M O SType L 2-k-MOS IV 10 ± 0.3 . Unit in mm 0 3.2 ±0.2 2.7 ±0.2 High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications

2SK1865

Abstract: ld12a diode 9D Bp co2cc 2sk18
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1865 Field Effect Transistor Industrial A p p lica tio n s Unit in m m Silicon N Channel MOSType c-MOS III.5 High Speed, High Current Switching Applications F ea tu res • Low Drain-Source ON Resistance - Rds (ON) = 0-55Q (Typ.)

C3902

Abstract: 25A15 SC3902 A 1507 EN2101B 2SA audio POWER TRANSISTORS tA 1507 2SA1507 Audio Circuit with IC 701
Contextual Info: Ordering number:EN2101B _ 2SA1507/2SC3902 PNP/NPN Epitaxial Planar Silicon Transistors 160V/1.5A Switching Applications A pplications • Color TV audio output, converters, inverters. F e a tu re s •High breakdown voltage. • Large current capacity.

2SJ241

Contextual Info: TOSHIBA Discrete Semiconductors 2SJ241 Field Effect Transistor Industrial Applications TQ-220FL Silicon P Channel MOS Type Unit in mm L2-tc-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt G ate Drive