MC 140 TRANSISTOR Search Results

aaf marking sot23-5

Abstract: MCP73832 MCP7383X-2 MCP73831 "Charge Management Controller" marking code e2 sot23-5 DS21984B MCP7383X-5 SOT23 marking code AAR
Contextual Info: MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features: Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%

3DG 130

Abstract: MCP73832 MCP7383X MCP73831 MCP73831T aae sot-23 marking JC51-7 AAK marking code
Contextual Info: MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%

MCP73831

Abstract: aaf marking sot23-5 aae DFN marking MCP73831T Li-ion charger controller sot23-5 MCP73831-4 C04 SOT23 MCP73831T-5ACI/MC mosfet 4433 AAK marking code
Contextual Info: MCP73831 Miniature Single Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controller Features: Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%

Contextual Info: MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%

Battery Management

Abstract: MCP73831-2
Contextual Info: MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%

FET BFW 43

Abstract: MPSA 506 transistor TRANSISTOR BC 157 TRANSISTOR BC 530 transistor BF 298 BFT58 transistor mpsa 42 BFW 43 transistor transistor 2SA transistor 2 sa 72 transistor BF 257
Contextual Info: 4.2+« 4.2+* I OOOOO C MC MC MC MC M O O O 1O C Mt—i— 1 C M Oo C MC M - I I I I CMC MC MC MC M C MID ID 1 C M OO C MC M lO ID ID LOLD C MC MC M*- t-* o' ò o’ O* O 1 LOLOLOLO C MC MC MC M o d O* O 0> «—C Mr- C MC M - Ul O> > IO o o o o CO»—« —*—

Transistor C5019

Abstract: C5019 MC 140 transistor
Contextual Info: KSC5019 KSC5019 Low Saturation • VCE sat =0.5V at IC=2A, IB=50mA TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 30 Units

kc 5188

Abstract: 7805 Ka 2535 data sheet
Contextual Info: NTC SMD Thermistors With Nickel Barrier Termination NB 12 - NB 20 - NB 21 Chip thermistors are high quality and low cost devices especially developed for surface mounting applications. They are widely used for temperature compensation but can also achieve temperature control of printed circuits.

2SA205

Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

P-8CM

Abstract: IC P605 8 pin DIODE P31A "triac protection" overcurrent MOV surge protection circuit diagram p31b DIODE P31B Teccor P0080SC MC marking code diode s4 do-214 P3100EB
Contextual Info: Data Book and Design Guide TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: techsalessidactor@littelfuse.com A Littelfuse company Teccor Electronics is the proprietor of the SIDACtor , Battrax®, and TeleLink®

diode cc 3053

Abstract: cc 3053 NTC THERMISTORS nd06 NI24RA0104 THERMISTORS SCK 055 ntc 150-7 10 k ntc thermistor 4 PC smd DA RN smd code nj
Contextual Info: A KYOCERA GROUP COMPANY TPC NTC Thermistors - Preliminary Catalog NTC SMD Thermistors With Nickel Barrier Termination NB 12 - NB 20 - NB 21 Chip thermistors are high quality and low cost devices especially developed for surface mounting applications. They

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 97Q 376-2022 (212)227-6008 FAX: (973) 3764860 SILICON PLANEX* TRANSISTOR Quality Semi-Conductors 2N3056A *.IMV»WOUJ-I . 2N3056A is a silicon NPN PLANEX* transistor, designed to provide a high breakdown voltage with a low saturation resistance. This

Contextual Info: N AMER P H I LIPS/DISCRETE QbE D PowerMOS transistor • bbSBTBl 0014737 4 ■ BUZ384 T - V 1 'I Z May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is

NTC THERMISTOR 3470

Abstract: SMD MARKING CODE N03 zener diode marking 182 bd 222 smd varistors 1399 GE SMD zener diode AVX BAR code ON THE label SMD MARKING CODE zener diode 501 Midwest Components THERMISTOR ND03N00103J
Contextual Info: AVX NTC Thermistors Contents NTC Thermistors NTC THERMISTORS General Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Application Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

0f10v

Contextual Info: TELEDYNE COMPONENTS m äT17büa Q0üb577 3 EÒE D F O T O F ET SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR FF 108 G E O M E T R Y 282 • • • • • HIGH SENSITIVITY LOW D A R K CURRENT FAST RESPONSE PHOTOTUBE REPLACEMENT FLAT GLASS TOP FOR EXTERNAL OPTICS

diode cc 3053

Abstract: THERMISTORS SCK 055 C 5763 transistor Ka 2535 TM 1628 Datasheet TL 7805 NTC THERMISTORS nd06 smd diode marking KC NTC 4,7 cc 3053
Contextual Info: A KYOCERA GROUP COMPANY TPC Thermistors NTC Contents Thermistors NTC General Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Application Notes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2SC3279

Abstract: 420600
Contextual Info: M C C TO-92 Plastic-Encapsulate Transistors ^ 2 S C 3 2 7 9 TR A N S IS T O R N P N FEATURES Power dissipation TO-92 Pcm: 0.75W (Tamb=25°C) Collector current 1 .E M IT T E R IcM: 2 A 2.C O LLEC TO R Collector-base voltage ViBR)cao: 3 .BASE T 30 V Operating end storage junction temperature range

Contextual Info: iLcti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N4080 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PNP SILICON PLANEX TRANSISTOR MECHANICAL DATA CASE: JEDEC TO-18 with four leads TERMINAL CONNECTIONS: Lead 1 Emitter Lead 3 Collector

uei 350

Abstract: K 3567 MMBT3568 MMBTA05 MMBTA06 MMBTA42 MMBTA43 mmbt
Contextual Info: Surface Mount Transistors Medium Power—NPN VCER* VCEO V Min V eb o (V) Min MMBT3568 TO-236 (49) 80 60 5 Its MMBT3700 TO-236 (49) 140 Type No. Case Style 80 7 »T Ic e s * C0b *oft NF VCE(SAT) V b E(SAT) Test Process (MHz) @ lc •cBOa VCB hre lc & VCE

BUZ84

Contextual Info: N AMER PH IL IP S/ D I S CR E T E PowerMOS transistor ObE D • bb53T31 O O m b l b BU Z84 1 ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

MC1460r

Abstract: mc1461 2N3055 series voltage regulator Motorola Mc 1461 MC1561 MC1460 MC1560R 2n3055 voltage regulator MC1560G MC1561R
Contextual Info: MC1560, MC1561 MC1460, MC1461 MOf JOLITHIC . C LT/5 GE REGUL/ TOR P O S I T i 'V'- E - P O W E R - S U P P L Y , , . designed to d eliver c o n tin u o u s load c u rre n t up to 5 0 0 m A w ith o u t use o f an e x te rn a l p ow er transistor. V O LTAG E R E G O LA T O R

2N6849

Contextual Info: 2N6849 Siliconix PĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) -100 0.30 -6.5 Parametric limits in accordance with MILĆSĆ19500/564 where applicable. S TOĆ205AF (TOĆ39) S G 1 2 3 G D D Top View PĆChannel MOSFET

B0530

Abstract: 2N7089
Contextual Info: 2N7089 Siliconix PĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) -100 0.30 -10 TOĆ257AB Hermetic Package S G Case Isolated D G D S PĆChannel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

2N6849

Abstract: W41A
Contextual Info: 2N6849 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –100 0.30 –6.5 Parametric limits in accordance with MIL-S-19500/564 where applicable. S TO-205AF (TO-39) S G 1 2 3 G D Top View D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)