MC 108 TRANSISTOR Search Results
MC 108 TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA011 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
| TPCP8513 | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet |
MC 108 TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
YTF540Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOS h HIGH SPEED. HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 10 .3 MA X. • FEATURES: •Low Drain-Source ON Resistance : ROS(ON)= 0.07ß (Typ.) |
OCR Scan |
10/oevgs-10v00a//tsytf540 | |
0f10vContextual Info: TELEDYNE COMPONENTS m äT17büa Q0üb577 3 EÒE D F O T O F ET SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR FF 108 G E O M E T R Y 282 • • • • • HIGH SENSITIVITY LOW D A R K CURRENT FAST RESPONSE PHOTOTUBE REPLACEMENT FLAT GLASS TOP FOR EXTERNAL OPTICS |
OCR Scan |
400mw0f10v | |
|
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1928 Field Effect Transistor Silicon N Channel MOSType itMOS II High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' ^DS(ON) = 0.7Q (Typ.) • High Forward Transfer Admittance - lYfSl= 10S (Typ.) |
OCR Scan |
2sk19280021fc | |
2SK1928Contextual Info: TOSHIBA 2SK1928 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS II h iZ . High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RiD S (O N ) = 0.7Q [Typ.) • High Forward Transfer Admittance |
OCR Scan |
2sk1928ij100a/ms | |
ERF150WJ
Abstract: 72606-WV003 72606-WV001 PS-UDC24 VZA42P2HAA VZA40P7BAA JVOP-181 VZA40P7HAA VZA47P5HAA VZA40P4HAA
|
Original |
i68e-en-01v1000en954-1vz-21p5/22p2+15 | |
KF520
Abstract: KF521 KF552 KS4391 KF522 field effect transistors KS4392 KS4393 S10ms transistor 4393
|
OCR Scan |
kf520kf521kf522kf523+8 | |
INVERTER 50 kW
Abstract: 5,5 KW 3-phase motor weight 150 KW motor a1000-cavpc232-ee 110 KW motor 90 KW motor jvop 160 37 KW motor ERF-150WJ401 IT 236 schaffner
|
Original |
v1000en954-1en6158en60204-1+16 | |
VZA40P7BAA
Abstract: a1000-cavpc232-ee ERF-150WJ201 ERF-150WJ101 ERF-150WJ301 ERF-150WJ401 VZA42P2BAA VZA41P5BAA INVERTER 50 kW A1000-FIV1010-SE
|
Original |
v1000en954-1en6158en60204-1+16 | |
ERF-150WJ401
Abstract: ERF-150WJ201 VZA40P7BAA ERF-150WJ301 ERF-150WJ751 A1000-FIV3010-SE A1000-FEV2102-RE A1000-FIV3010-RE a1000-cavpc232-ee A1000-REV00K4100-IE
|
Original |
v1000en954-1en6158en60204-1+16 | |
BUZ11AContextual Info: *57 SGS-THOMSON TYPE BUZ11A IH iO lM iQ O I B U Z 11 A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V dss R DS on Id 50 V < 0.055 a 27 A • TYPICAL R Ds(on) = 0.048 Q AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C |
OCR Scan |
buz11a | |
4312 020 36642
Abstract: BLV37 transistor tt 2222 9t2 transistor ca212 TT 2222 npn transistor 4312
|
OCR Scan |
711002bblv37ot179711da2b+6 | |
L428Contextual Info: TO SHIBA 2SK2789 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O SV 2SK2789 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm T0-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS |
OCR Scan |
2sk2789t0-220fl100/ia20kil+2 | |
|
Contextual Info: TO SHIBA 2SK2314 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE L2- tt-M O S V 2SK2314 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 03.6 ±0.2 |
OCR Scan |
2sk231420kiliar-27a428//h | |
|
Contextual Info: T O SH IB A 2SK2314 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O SV 2SK2314 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Sorce ON Resistance : Rjjg (ON)= |
OCR Scan |
2sk231420kf2 | |
|
|
|||
6 pin TRANSISTOR SMD CODE PA
Abstract: BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD
|
OCR Scan |
buz22smdq67042-s4139dsj146 pin transistor smd code pa+8 | |
16V 100uf
Abstract: PCM1773 PCM1770 PCM1772 FP1F
|
Original |
demdai1772/1773sleu025pcm1772/7310uf/16v+9 | |
equivalent components of transistor 772
Abstract: hartley oscillator mc13146
|
Original |
mc13146mc13145mc33410mc33411a/b+2 | |
MCP60421
Abstract: mcp61421 PIC16F877 stepper motor interfacing PIC16F874A SD card Thermistor 20SP switch reluctance motor control using pic18F46K20 ENC28J60 mplab icd 3 mclr pgd pgc pic16f722 TC1426 rf transmitter and receiver for pic16f887
|
Original |
12-bit14-bitpic1816-bit+11 | |
C732B
Abstract: 337 BGA 337 BGA footprint EPM7032AE EPM7064AE EPM7128A EPM7128AE EPM7256A EPM7256AE EPM7512AE
|
Original |
7000aejesd-71epm7128aepm7256a+10 | |
NEC MYS
Abstract: FR-S540E S-N10 Magnetic Contactor FR-S520se magnetic S-N20 mitsubishi s-n10 FR-S520E-0 fr-s540e-3.7k user manual service manual FR-S520SE S-N10 Contactor
|
Original |
fr-s500fr-s500efr-s520e-0fr-s540e-0+12 | |
4093 BP
Abstract: cd 4093 equivalent V40098D V40511D 40511 4017 BP MC 4011 BCP MC 4093 ZUD 132 ci 4093 equivalent
|
OCR Scan |
v4001v4011v4015dv4017d+12 | |
mps1983Contextual Info: MOTOROLA SEMICONDUCTOR MPS901 MPS1983 TECHNICAL DATA T h e R F L in e 1C = 3 0 m A HIGH FREQUENCY TRANSISTORS N P N S IL IC O N H IG H - F R E Q U E N C Y T R A N S IS T O R NPN SILICION . . . designed prim arily for use in high-gain, low-noise small-signal |
OCR Scan |
mps901mps1983mrf901 | |
MATRA
Abstract: t4211 MCT12K MC10K
|
OCR Scan |
matrat4211mct12kmc10k | |
|
Contextual Info: Transistors Switching 450V, 7A 2SK2299N •F e a tu re s •E x te rn a l dim ensions (Units: mm) 1) Low on-resistance. _a, •mn + 0.3 10.0 2) High-speed switching. - . c+ 0.3 0.1 4 5 3) W ide SOA (safe operating area). 4) G ate-source volta ge guaranteed |
OCR Scan |
2sk2299no-220fn | |