MBRS Search Results

MBRS4201T3G

Contextual Info: MBRS4201T3G, NRVBS4201T3G 200 V, 4 A Schottky Fast Soft-Recovery Power Rectifier http://onsemi.com SMC Power Surface Mount Package Features • Lower Forward Voltage than any Ultrafast Rectifier:       VF < 0.61 V at 150C Fast Switching Speed: Reverse Recovery Time tRR < 35 ns

MBRS360T3G

Abstract: NRVBS360T3G NRVBS360BT3G MBRS360BT3G MBRS360BT3
Contextual Info: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

NRVBS2040LT3G

Abstract: 403A-0 MBRS2040LT3G
Contextual Info: MBRS2040LT3G, NRVBS2040LT3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package http://onsemi.com . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation

marking code onsemi Diode B34

Abstract: b34 DIODE schottky SMC 403-03 MBRS340T3 b34 diode diode marking b34 marking B34 diode SCHOTTKY DIODE ON SEMICONDUCTOR B34 DIODE B34 diode schottky B34
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRS4060CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

Contextual Info: MBRS2035CT - MBRS20150CT CREAT BY ART 20.0AMPS. Surface Mount Schottky Barrier Rectifiers D2PAK Pb RoHS COMPLIANCE Features — UL Recognized File # E-326854 — For surface mounted application — Plastic material used carriers Underwriters Laboratory Classification 94V-0

Contextual Info: MBRS1035 - MBRS10150 CREAT BY ART 10.0AMPS. Surface Mount Schottky Barrier Rectifiers 2 D PAK Features — UL Recognized File # E-326854 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

D0-214AB

Abstract: 30BQ060 D0214AB HSM350 HSM360 MBRS360T3 SK36
Contextual Info: 3 Amp Schottky Rectifier HSM350, HSM360 — Oh rATur\nr d a m r CATHODE BAND Dim. Inches Minimum D0215AB D0214AB Microsemi Catalog Number HSM350* HSM360* A B C D E F G H Idustry Part Number SK36 MBRS360T3 30BQ060 Working Peak Reverse Voltage .117 .260 .220

Contextual Info: Bulletin PD-20410 07/04 MBRS320TRPbF 3 Amp SCHOTTKY RECTIFIER IF AV = 3.0Amp VR = 20V Major Ratings and Characteristics Description/ Features Characteristics Value Units IF(AV) Rectangular waveform 3.0 A VRRM 20 V IFSM @ t p= 5 µs sine 820 A VF @ 3.0 Apk, TJ = 125°C

Contextual Info: Bulletin PD-20592 rev. C 05/02 MBRS190TR MBRS1100TR SCHOTTKY RECTIFIER 1 Amp SMB Description/Features Major Ratings and Characteristics MBR190TR MBR1100TR Units Characteristics IF AV Rectangular waveform 1.0 A 90 - 100 V IFSM @ tp = 5 µs sine 870 A VF @ 1.0 Apk, TJ=125°C

Contextual Info: VS-MBRS120TRPbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable • Very low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode

AN-994

Abstract: MBRS130TR
Contextual Info: Bulletin PD-20584 rev. D 03/03 MBRS130TR SCHOTTKY RECTIFIER 1 Amp SMB Major Ratings and Characteristics Characteristics Description/ Features MBRS130TR Units The MBRS130TR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small

Contextual Info: Bulletin PD-20585 rev. F 07/05 MBRS340TR SCHOTTKY RECTIFIER 3 Amp IF AV = 3.0Amp VR = 40V Description/ Features Major Ratings and Characteristics The MBRS340TR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small

MBRS320

Contextual Info: MBRS320 SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters. This device offers a low forward voltage performance in a

403A-03

Abstract: CASE 403A B140 MBRS140T3
Contextual Info: MOTOROLA Order this document by MBRS140T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS140T3 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with

Contextual Info: s MBRS1635- MBRS16150 TAIWAN SEMICONDUCTOR RoHS 16.0 AMPS. Surface Mount Schottky Barrier Rectifiers D*PAK C O M P L IA N C E Features <<' P la s tic m a te ria l u s e d c a rrie s U n d e rw rite rs L a b o ra to ry C la s s ific a tio n s & 4 V -0 M e ta l s ilic o n ju n c tio n , m a jo rity c a rrie r c o n d u c tio n

Contextual Info: MOTOROLA Order this document by MBRS240LT3/D SEMICONDUCTOR TECHNICAL DATA Advance Information Surface Mount Schottky Power Rectifier MBRS240LT3 SMB Power Surface Mount Package . . . em ploying the S chottky B arrier principle in a m e ta l-to -s ilic o n power

Contextual Info: SENSITRON SEMICONDUCTOR
Technical Data    3374, . 




MBRS360-G Green Products MBRS360-G   
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Contextual Info: MBRS1045CTC . MBRS10150CTC 10.0 Amp. Schottky Barrier Rectifier Current 10.0 A Voltage 45 to 150 V FEATURES • Low leakage current • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop

Contextual Info: MBRS25HCTC 25.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Voltage 45 V FEATURES • Low leakage current • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop

IR19-IR10

Abstract: marking code IR10 diode IR10 marking code MBRS1100TRPBF AN-994 IR10
Contextual Info: Bulletin PD-20788 07/04 MBRS190TRPbF MBRS1100TRPbF SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0Amp VR = 90-100V Description/ Features Major Ratings and Characteristics Characteristics Value Units 1.0 A 90 - 100 V IFSM @ tp = 5 µs sine 870 A VF @ 1.0 Apk, TJ=125°C

Contextual Info: MBRS16 16 Amp. Surface Mount Schottky Barrier Rectifiers D2PAK Voltage 45 to 150 V Current 16 A 2 • For surface mounted application • Low forward voltage drop • High current capability • High reliability • High surge current capability 3 Mechanical Data

1bl3

Contextual Info: MBRS130L PA.RCH.LD s e m i c o n d u c t o r Tm DISCRETt ECH°nW0 L 0 “ eSSIGNAL SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high

Contextual Info: VS-MBRS140TRPbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of