MBRF3080C Search Results

Contextual Info: MBRF3080CT Isolated 30.0AMPS Schottky Barrier Rectifier ITO-220AB Features — Plastic material used carries Underwriters Laboratory Classifications 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency — High current capability, low forward voltage drop

Contextual Info: MBRF3080CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - UL Recognized File # E-326243 - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: MBRF3080CT Isolated 30.0AMPS Schottky Barrier Rectifier ITO-220AB Features — Plastic material used carries Underwriters Laboratory Classifications 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency — High current capability, low forward voltage drop

Schottky

Contextual Info: MBRF3080CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: SANGDEST MICROELECTRONICS MBRF3080CT Green Products Technical Data Data Sheet N1109, Rev. A MBRF3080CT SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • •

Contextual Info: MBRF3080CT Isolated 30.0AMPS Schottky Barrier Rectifier ITO-220AB Pb RoHS COMPLIANCE Features ­ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ­ Metal silicon junction, majority carrier conduction ­ Low power loss, high efficiency

Contextual Info: MBRF3080CT Isolated 30.0AMPS Schottky Barrier Rectifier ITO-220AB Pb RoHS COMPLIANCE Features — Plastic material used carries Underwriters Laboratory Classifications 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency

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Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
Contextual Info: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital

MBRF3045C

Abstract: MBRF30200 MBRF3080C
Contextual Info: MBRF3020C thru MBRF30200C Schottky Barrier Rectifiers PRIMARY CHARACTERISTICS ITO-220AB Dimensions in inches and millimeters IF 30A VRRM 20~200V IFSM 200A VF 0.70V, 0.75V, 0.85V, 0.92V TJ max 150°C Features Mechanical Date ‧Guard Ring for over voltage Protection

Contextual Info: MBRF3045CT-Y thru MBRF30150CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: MBRF3045CT-Y thru MBRF30150CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

SBLF10100CT

Abstract: SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510
Contextual Info: CONTENTS TABLE OF CONTENTS ……………………C NUMERICAL INDEX ……………………L SYMBOLS AND TERMS ……………………S HIGH RELIABILITY EXPERIMENT ……………………U trr REVERSE RECOVERY TIME MEASUREMENT CIRCUIT ……………………V

Contextual Info: MBRF3045CT-Y thru MBRF30200CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and