MBR60080CT Search Results

MBR600100CT

Abstract: mcc40
Contextual Info: MCC 4 0 0 AM PERE S C H O T T K Y I FU LL PAC K _ MBR40020CT MBR40030CT MBR40035CT MBR40040CT MBR40045CT MBR40060CT MBR40080CT MBR400100CT 20 30 35 40 45 60 80 too 400 400 400 400 400 400 400 400 125 125 125 125 125 125 125 125

Contextual Info: MBR60045CT thru MBR600100CTR Silicon Power Schottky Diode VRRM = 45 V - 100 V IF AV = 600 A Features • High Surge Capability • Types from 45 V to 100 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

CPT600100

Abstract: CPT60080 CPT60090 MBR600100CT MBR60080CT
Contextual Info: Schottky PowerMod CPT60080 - CPT600100 A Dim. Inches R G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number CPT60080* CPT60090* CPT600100* E Notes: Baseplate: Nickel plated copper Min. A B C E

Contextual Info: MB R 60020C T R DACO SEMICONDUCTOR CO., LTD. MB R 600100CT(R ) T HRU SCHOTTKY DIODE MODULE TYPES 600A Features 600Amp Rectifier 20-100 Volts High Surge Capability Types Up to 100V VRRM Twin Tower Maximum Ratings A R Operating Temperature: -55 C to+150 Storage Temperatur: -55 C to +150

Contextual Info: MBR60045CT thru MBR600100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 600 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

CPT600100

Abstract: CPT60080 CPT60090 MBR600100CT MBR60080CT
Contextual Info: d c r600i 00 Schottky Powe rMo D D " 60080 c r • V V Baseplate A=Common Anode 1 U * "1 i H h 1 / “ I- \ Baseplate Common Cathode F ¡ / -I il- u \ — , r r t _L‘ °-N - I Baseplate D=Doubler Notes: Baseplate: Nickel plated copper Microsemi Catalog Number

Contextual Info: MBR60045CT thru MBR600100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 600 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

MBR600100CT

Abstract: MBR60020CT MBR60030CT MBR60035CT MBR60040CT MBR60045CT MBR60080CT
Contextual Info: MCC MBR60020CT THRU MBR600100CT Micro Commercial Corp. 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • 600 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton

CPT600100

Abstract: CPT60080 CPT60090 MBR600100CT MBR60080CT
Contextual Info: Schottky PowerMod CPT60080 - CPT600100 M V Dim . Inches Min. Baseplate A=Common Anode Baseplate Common Cathode U t H h 1 F u h , — r 1 “ I- °N | W ° 1 n Baseplate D=Doubler Notes: Baseplate: Nickel plated copper Microsemi Catalog Number Industry

Contextual Info: Schottky PowerMod CPT60080 - CPT600100 A Dim. Inches R G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number CPT60080* CPT60090* CPT600100* E Notes: Baseplate: Nickel plated copper Min. A B C E

MBR60060CT

Abstract: MBR60020CT
Contextual Info: MCC MBR60020CT
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU MBR600100CT Features • • • • 600 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton

CPT600100

Abstract: CPT60080 CPT60090 MBR600100CT MBR60080CT
Contextual Info: Schottky PowerMod CPT60080 - ¥ ¥ CPT600100 Baseplate A=Common Anode U 1 H 1 “ I- h / 1 \ Baseplate Common Cathode F u , — r ! oN _L‘ W° Baseplate D=Doubler Dim . In ch es Min. A B C E F G H N Q R U V W Max. -3.630 0.700 0.800 — .680 0.120

B2X84C12

Abstract: MBR30100 MBR400100CT RS1005M UF5407G mur640 fst83100 MBR1535 MUR140G BC548
Contextual Info: MCC P A R T IN D E X PART NUMBER 1-5KE10 C {A) 1.5KE100(C)(A) 1-5KE11(C)(A) 1.5KE110fC)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1-5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C){A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1-5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

MBR60045CT

Contextual Info: Naina Semiconductor Ltd. MBR60045CT thru MBR600100CTR Silicon Schottky Diode, 600A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified