MBR40080CT Search Results

MBR600100CT

Abstract: mcc40
Contextual Info: MCC 4 0 0 AM PERE S C H O T T K Y I FU LL PAC K _ MBR40020CT MBR40030CT MBR40035CT MBR40040CT MBR40045CT MBR40060CT MBR40080CT MBR400100CT 20 30 35 40 45 60 80 too 400 400 400 400 400 400 400 400 125 125 125 125 125 125 125 125

CPT40080-CPT400100

Abstract: MBR400100CT
Contextual Info: Schottky PowerMod CPT40080-CPT400100 A Dim. Inches R G Min. Baseplate A=Common Anode A B C E F G H N Q R U V W B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT40080* 403CNQ080 MBR40080CT CPT40090*

CPT40080-CPT400100

Abstract: 403CNQ080 403CNQ100 CPT400100 CPT40080 CPT40090 MBR400100CT MBR40080CT MBRP400100CTL
Contextual Info: Schottky PowerMod CPT40080-CPT400100 A Dim. Inches R G Min. Baseplate A=Common Anode A B C E F G H N Q R U V W B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT40080* 403CNQ080 MBR40080CT CPT40090*

MBR40045CT

Abstract: MBR400100CT MBR40060CT MBR40080CT MBR400100CTR
Contextual Info: MBR40045CT thru MBR400100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 400 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

403cnq100

Abstract: 403CNQ080 CPT400100 CPT40080 CPT40090 MBR40080CT
Contextual Info: Schottky PowerMod CPT40080—CPT4001 00 Dim. Inches Min. V Baseplate A=Common Anode A -B 0.700 c V Baseplate Common Cathode U *"1 1 H — 1 -1 - r T ^ i r t ^ | r * i, _ L ‘ -lit- W o Baseplate D=Doubler Max. E F G H N Q R U V W 3.630 0.800 -0.630

Contextual Info: cD Schottky PowerMod 0080— 1 — D C ¥ Dim . Inches Min. Baseplate A=Common Anode T Q Baseplate Common Cathode h I o= i z " 3 = 1: -A °-H — i m L I ° Baseplate D=Doubler TT E Notes: 00100 A B C E F G H N Q R U V W Max. -3.630 0.700 0.800 -0.630

Contextual Info: MBR40020CT R THRU DACO SEMICONDUCTOR CO., LTD. MBR4001 OOCT(R) SCHOTTKY DIODE MODULE TYPES 400A 400Am p Rectifier 20-100 Volts Features High Surge Capability Types Up to 100V VRRM Twin Tower Maximum Ratings Operating Temperature: -55 C to+150 °C Storage Temperatur: -55 °C to+150 °C

40060CT

Abstract: MBR300100CT MBR400100CT MBR40020CT MBR40030CT MBR40035CT MBR40040CT MBR40045CT MBR40060CT MBR40080CT
Contextual Info: MCC MBR40020CT THRU MBR300100CT Micro Commercial Corp. 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • 400 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton

MBR400100CT

Abstract: MBR40020CT MBR40030CT MBR40035CT MBR40040CT MBR40045CT MBR40060CT MBR40080CT Daco 400Amp
Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBR40020CT R THRU MBR400100CT(R) SCHOTTKY DIODES MODULE TYPE 400A Features High Surge Capability 400Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175

403CNQ080

Abstract: 403CNQ100 CPT400100 CPT40080 CPT40090 MBR400100CT MBR40080CT MBRP400100CTL
Contextual Info: Schottky PowerMod CPT40080—CPT4001 00 Dim . ¥ Min. Baseplate A=Common Anode V Baseplate Common Cathode _L o-NT i H 4 iz t d = i: -A I Baseplate D=Doubler TT E Notes: In ch es A B C E F G H N Q R U V W Max. -3.630 0.700 0.800 -0.630 0.120 0.130 0.490

400Amp

Abstract: MBR400100CT MBR40020CT MBR40030CT MBR40035CT MBR40040CT MBR40045CT MBR40060CT MBR40080CT MBR400100
Contextual Info: Transys MBR40020CT R THRU MBR400100CT(R) Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 400A Features High Surge Capability 400Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175

40060CT

Abstract: MBR300100CT
Contextual Info: MCC MBR40020CT THRU MBR300100CT
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • 400 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton

Contextual Info: MBR40045CT thru MBR400100CTR Silicon Power Schottky Diode VRRM = 45 V - 100 V IF AV = 400 A Features • High Surge Capability • Types from 45 V to 100 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Contextual Info: MBR40045CT thru MBR400100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 400 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

B2X84C12

Abstract: MBR30100 MBR400100CT RS1005M UF5407G mur640 fst83100 MBR1535 MUR140G BC548
Contextual Info: MCC P A R T IN D E X PART NUMBER 1-5KE10 C {A) 1.5KE100(C)(A) 1-5KE11(C)(A) 1.5KE110fC)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1-5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C){A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1-5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

Contextual Info: MBR40045CT thru MBR400100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 400 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed