MBR5008 Search Results

MBR600100CT

Abstract: mcc40
Contextual Info: MCC 4 0 0 AM PERE S C H O T T K Y I FU LL PAC K _ MBR40020CT MBR40030CT MBR40035CT MBR40040CT MBR40045CT MBR40060CT MBR40080CT MBR400100CT 20 30 35 40 45 60 80 too 400 400 400 400 400 400 400 400 125 125 125 125 125 125 125 125

CPT500100

Abstract: CPT50080 CPT50090 MBR500100CT MBR50080CT EE-170
Contextual Info: d r500i 00 Schottky Powe rMo D • c D " r50080 c V V Baseplate A=Common Anode Baseplate Common Cathode U h 1 F u r * " 1 1 i H “ / \ ¡ / \ I- t — r _ L ‘ - I il- Microsemi Catalog Number C PT50080* C PT50090* CPT500100* In d u stry P a rt Num ber

MBR500100CT

Abstract: MBR50020CT MBR50030CT MBR50035CT MBR50040CT MBR50045CT MBR50060CT MBR50080CT k 4026
Contextual Info: MCC MBR50020CT THRU MBR500100CT Micro Commercial Corp. 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • 500 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton

Contextual Info: Schottky PowerMod CPT50080 - CPT500100 A Dim. Inches R G Min. Baseplate A=Common Anode A B C E F G H N Q R U V W B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V E Microsemi Catalog Number Industry Part Number CPT50080* CPT50090* CPT500100*

Contextual Info: MBR50045CT thru MBR500100CTR Silicon Power Schottky Diode VRRM = 45 V - 100 V IF AV = 500 A Features • High Surge Capability • Types from 45 to 100 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Contextual Info: MBR50045CT thru MBR500100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 500 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

CPT500100

Abstract: CPT50080 CPT50090 MBR500100CT MBR50080CT
Contextual Info: Schottky PowerMod CPT50080 - CPT500100 Dim. Inches Min. V Baseplate A=Common Anode A -B 0.700 c V Baseplate Common Cathode U *"1 1 H h 1 1 / “ I- \ ! / F 1=1 °N | W o u r * i \ _ L ‘ — r -lit- Baseplate D=Doubler Max. E F G H N Q R U V W 3.630

CPT500100

Abstract: CPT50080 CPT50090 MBR500100CT MBR50080CT
Contextual Info: Schottky PowerMod CPT50080 - ¥ ¥ CPT500100 Baseplate A=Common Anode U 1 H 1 “ I- h / 1 \ Baseplate Common Cathode F u , — r ! oN _L‘ W° Baseplate D=Doubler Dim . In ch es Min. Max. A -B 0.700 c E F G H N Q R U V W 3.630 0.800 — .680 0.120

B2X84C12

Abstract: MBR30100 MBR400100CT RS1005M UF5407G mur640 fst83100 MBR1535 MUR140G BC548
Contextual Info: MCC P A R T IN D E X PART NUMBER 1-5KE10 C {A) 1.5KE100(C)(A) 1-5KE11(C)(A) 1.5KE110fC)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1-5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C){A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1-5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

Contextual Info: MBR 50020C T R DACO SEMICONDUCTOR CO., LTD. MBR 500100CT(R) T HRU SCHOTTKY DIODE MODULE TYPES 500A Features 500Amp Rectifier 20-100 Volts High Surge Capability Types Up to 100V VRRM Maximum Ratings Twin Tower Operating Temperature: -55 C to+150 Storage Temperatur: -55 C to +150

CPT500100

Abstract: CPT50080 CPT50090 MBR500100CT MBR50080CT
Contextual Info: Schottky PowerMod CPT50080 - CPT500100 A Dim. Inches R G Min. Baseplate A=Common Anode A B C E F G H N Q R U V W B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V E Microsemi Catalog Number Industry Part Number CPT50080* CPT50090* CPT500100*

Contextual Info: MBR50045CT thru MBR500100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 500 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

BR5010

Abstract: KBPC50005 KBPC5001 KBPC5002 KBPC5004 KBPC5006 KBPC5008 KBPC5010 KBPC5010W ta8625
Contextual Info: BRIDGE RECTIFIERS OPERATING AND STORAGE TEMPERATURE -55 to +125 TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @Half-Wave Resistive Load 60Hz Maximum Forward Peak Surge Current @ 8.3mS Superimposed Maximum Reverse Current @ PRV @25 TA

MBR50045CT

Contextual Info: Naina Semiconductor Ltd. MBR50045CT thru MBR500100CTR Silicon Schottky Diode, 500A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified