MBR253 Search Results

2550CT

Contextual Info: LITE-ON SEMICONDUCTOR MBR2530CT thru 2560CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 25 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

Contextual Info: DIGITRON SEMICONDUCTORS MBR2535CTL 25A SCHOTTKY RECTIFIER MAXIMUM RATINGS Symbol MBR2535CTL Unit Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage Rating VRRM VRWM VR 35 30 30 V Average rectified forward current Rated VR IF(AV)

Contextual Info: MBR2535CT - MBR2560CT 25 A Schottky Barrier Rectifiers Features • Low Power Loss, High Efficiency • High Surge Capacity • Metal Silicon Junction, Majority Carrier Conduction • High Current Capacity, Low Forward Voltage Drop • Guard Ring for Over-Voltage Protection OVP

Contextual Info: MBR2535CT THRU MBR2560CT SCHOTTKY RECTIFIER Reverse Voltage 35 to 60 Volts Forward Current - 30.0 Amperes - FEATURES TO-22QAB ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap

2535CT

Abstract: 2545CT MBR2535CT MBR2560CT
Contextual Info: MBR2535CT - MBR2560CT Features • • • • • • 0.185 4.70 0.175(4.44) 0.412(10.5) MAX 0.055(1.40) 0.045(1.14) 0.154(3.91) 0.148(3.74) Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity

Contextual Info: MBR2535CT - MBR25150CT CREAT BY ART 25.0 AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency

MBR2535CT

Abstract: MBR2545CT MBR2550CT MBR2560CT
Contextual Info: MBR2535CT - MBR2560CT 30A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection TO-220AB Low Power Loss, High Efficiency L High Surge Capability B Min Max A 14.48 15.75 B 10.00 10.40

2535CT

Abstract: 2545CT MBR2535CT MBR2560CT
Contextual Info: E M IC O N D U C T O R 1 MBR2535CT - MBR2560CT 0 .055 1.40 0 .045 (1.14 ) Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier

MBR 2535 package

Abstract: MBR2560
Contextual Info: MBR2535CT - MBR25150CT CREAT BY ART 25.0 AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency

MBR2545CT/45

Abstract: MBR2535CT MBR2545CT MBR2550CT MBR2560CT
Contextual Info: MBR2535CT - MBR2560CT 30A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • G uard Ring D ie Construction for T ran sien t Protection • Low P ow er Loss, High Efficiency • High S urge Capability Lh -*| • High C urrent C apability and Low Forward

Contextual Info: BL GALAXY ELECTRICAL MBR2535CT - MBR2560CT VOLTAGE RANGE: 35 - 60 V CURRENT: 25 A DUAL SCHOTTKY RECTIFIERS FEATURES High s urge capacity. TO-220AB For us e in low voltage, high frequency inverters , free 111 wheeling, and polarity protection applications .

b2535

Abstract: b2545 B2545 M b2535 diode
Contextual Info: MOTOROLA MBR2535CT MBR2545CT SEM ICONDUCTOR TECHNICAL DATA MBR2545CT is a Motorola Preferred Device Sw itchm ode Power R e ctifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:

Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODEt Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: http://onsemi.com

Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODEt Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: http://onsemi.com

B2535LG

Abstract: aka B2535LG B2535L B2535L diode B2535L AKA B2535L 220 SCHOTTKY BARRIER RECTIFIER aka MBR2535CTL MBR2535CTLG
Contextual Info: MBR2535CTL SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*

Contextual Info: MBR2535CT AND MBR2545CT SCHOTTKY RECTIFIER VOLTAGE RANGE - 35 and 45 Volts CURRENT - 30 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Fiammabiitiy Classifications 94V-0 ♦ Metal to silicon rectifier, majority carrier conduction ♦ Low power

MBR2535CT

Abstract: MBR2550CT MBR2560CT MBR2560
Contextual Info: MBR2535CT - MBR25150CT 25.0 AMPS. Schottky Barrier Rectifiers TO-220AB Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop

TC130

Abstract: MBR 2535 MBR2535CT MBR2550CT MBR2560CT
Contextual Info: MBR2535CT - MBR25150CT 25.0 AMPS. Schottky Barrier Rectifiers TO-220AB Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop

Schottky

Contextual Info: MBR2535CT thru MBR25150CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

30CTQ

Abstract: MBR2535CT MBR2545CT
Contextual Info: PD-2.322 rev. A 12/97 MBR2535CT MBR2545CT SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics Characteristics IF AV Rectangular waveform Description/Features MBR25.CT Units The MBR25.CT center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The

Contextual Info: MBR2535CTG, MBR2545CTG SWITCHMODE Power Rectifiers The MBR2535CTG/45CTG series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: SCHOTTKY BARRIER RECTIFIERS 30 AMPERES 35 and 45 VOLTS

B2535L

Abstract: B2535L diode
Contextual Info: MBR2535CTL SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency

Contextual Info: TSC S MBR2535CT THRU MBR2560CT 30.0 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 60 Volts Current 30.0 Amperes TO-220 Features •i■i- 4-$• ❖ ■4* .185 4.701 .175(4.44 Plastic m aterial used carries U nderw riters Laboratory C lassifications 94V-0

Contextual Info: MCC TM Micro Commercial Components MBR2535FCT THRU MBR2560FCT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • • 30 Amp Schottky Barrier Rectifier