MBR12080CT Search Results

203CNQ080

Abstract: 203CNQ100 CPT200100 CPT20080 CPT20090 MBR120100CT MBR12080CT MBR200100CT MBR20080CT
Contextual Info: Schottky PowerMod CPT20080-CPT200100 A Dim. Inches R G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT20080* 203CNQ080 MBR12080CT MBR20080CT CPT20090* CPT200100* 203CNQ100

203CNQ080

Abstract: 203CNQ100 CPT200100 CPT20080 CPT20090 MBR120100CT MBR12080CT MBR200100CT MBR20080CT
Contextual Info: Schottky PowerMod CPT20080—CPT2001 00 ¥ Baseplate A=Common Anode V Baseplate Common Cathode 1 u — 1 / T \ É ! / i V ! i c I Microsemi Catalog Number Industry P art Number CPT20080* 203CNQ080 MBR12080CT MBR20080CT °N | W ° i Baseplate D=Doubler Notes:

203CNQ080

Abstract: 203CNQ100 CPT200100 CPT20080 CPT20090 MBR120100CT MBR12080CT MBR20080CT
Contextual Info: ¥ ¥ Baseplate A=Common Anode Baseplate Common Cathode u *"1 1 1 H -1— 1 H u h \l i \ h - 1— 1- / °N | W ° I c Baseplate D=Doubler -I Notes: Baseplate: Nickel plated copper Microsemi Catalog Number Industry Part Number CPT20080* 203CNQ080 MBR12080CT

t 63 n 1200

Contextual Info: MCC MCC Part Number M a x ip u n 1 Average Forward Current Peak j @ Half-Wave Reverse I Resistive Load YpKage I 60Hz . ',| If î a v @ T a Forward Peak Surge Current @ 8.3mS Superimposed Maximum Reverse Current @ PRV @ 25°C Ta Ir If m V fm A mAdc A V o

Contextual Info: MBR12045CT thru MBR120100CTR Silicon Power Schottky Diode VRRM = 45 V - 100 V IF AV = 120 A Features • High Surge Capability • Types from 45 V to 100 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBR12020CT R THRU MBR120100CT(R) SCHOTTKY DIODES MODULE TYPE 120A Features High Surge Capability 120Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175

Contextual Info: MBR12045CT thru MBR120100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 120 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

Contextual Info: Naina Semiconductor Ltd. MBR12045CT thru MBR120100CTR Silicon Schottky Diode, 120A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified

Contextual Info: MBR12045CT thru MBR120100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 120 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

MBR12020CT

Contextual Info: MCC MBR12020CT
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU MBR120100CT Features • • • • 120 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton

MBR12060CT

Abstract: MBR120100CT MBR12045CT MBR12080CT
Contextual Info: MBR12045CT thru MBR120100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 120 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

B2X84C12

Abstract: MBR30100 MBR400100CT RS1005M UF5407G mur640 fst83100 MBR1535 MUR140G BC548
Contextual Info: MCC P A R T IN D E X PART NUMBER 1-5KE10 C {A) 1.5KE100(C)(A) 1-5KE11(C)(A) 1.5KE110fC)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1-5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C){A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1-5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

MBR12020CT(R)

Abstract: Twin Tower
Contextual Info: MBR 12020C T R DACO SEMICONDUCTOR CO., LTD. MBR 120100CT(R) T HRU SCHOTTKY DIODE MODULE TYPES 120A Features 120Amp Rectifier 20-100 Volts High Surge Capability Types Up to 100V VRRM Twin Tower Maximum Ratings A R Operating Temperature: -55 C to+150 Storage Temperatur: -55 C to +150

MBR120100CT

Abstract: MBR12020CT MBR12030CT MBR12035CT MBR12040CT MBR12045CT MBR12060CT MBR12080CT mbrf1201 MBR1200
Contextual Info: Transys MBR12020CT R THRU MBR120100CT(R) Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 120A Features High Surge Capability 120Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175