MBB110 Search Results

Contextual Info: Philips Semiconductors b b 5 3 ^ 31 □ 0 2 b 4 M0 b 7 5 IB APX Product specification Variable capacitance diode BBY31 N AUER PHILIPS/DISCRETE DESCRIPTION The BBY31 is a silicon planar variable capacitance diode in a microminiature SOT23 envelope. It is intended for electronic tuning

MDD 1654

Abstract: TMT Isolator wr 90 x band flange waveguide teledyne yig oscillator 10GHz bandpass filter yig oscillator hp m7928 teledyne microwave mbg ferretec filtronic band-pass
Contextual Info: TELEDYNEMICROWAVE the complete microwave solution Table of Contents Company Profile. . . . . . . . . . . . . . . . . . . . . . . . . 5 Sub-Systems. . . . . . . . . . . . . . . . . . . . . . . . . . 7 Diplexers and Multiplexers. . . . . . . . . . . . . . . . . . . . . . . . . . 82

pj 929 diode picture

Abstract: bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor
Contextual Info: Philips Sem iconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits

Contextual Info: Prelim inary F U JIT S U MOS Memories • M B 8 1 1 0 0 0 - 1 2 , M B 8 1 1 0 0 0 - 1 5 1,048,576-Bit Dynamic Random Access Memory D es c rip tio n The Fujitsu MB811000 is a fully decoded, dynamic NMOS random access memory organized as 1,048,576 one-bit words. The design

Contextual Info: • b 1353131 0024433 b50 « A P X N A HER PHILIPS/DISCRETE BBY42 b?E » J V V.H.F. VARIABLE CAPACITANCE DIODE The B B Y 4 2 is a variable capacitance diode in a microminiature plastic envelope SOT-23. It is intended for use in v.h.f. T V tuners and C A T V applications using S M D technology.

Contextual Info: FUJITSU MICROELECTRONICS 7 ft D e J 37^ 7^5 O Q Q a W l | T"VC'2 2 ^ T Advanced Inform ation FU JITSU MOS Memories MB811001-12, MB811001-15 1,048,576-Bit Dynamic Random Access Memory Description The Fujitsu MB811001 is a fully decoded, dynamic NMOS random

Contextual Info: N AMER PHILIPS/DISCRETE b^E D bb53T31 0QEb447 TET H A P X Product specification Philips Semiconductors_ BBY40 Variable capacitance diode DESCRIPTION The BBY40 is a variable capacitance diode in a plastic SOT23 envelope. It is intended for electronic tuning in VHF television

MBG-1026

Abstract: m7420A m7437 MBG-1025 MBG-1156 MBG-1014 MBG-1141 MBG-1126 MBG-1154 MBG-1152
Contextual Info: "!73 the complete microwave solution BAW Delay Lines Teledyne’s Bulk Acoustic Wave BAW Product Line has been producing BAW delay devices since the early 1960’s. Over the years, Teledyne Microwave has constantly improved BAW technology and is currently the world’s only supplier of microwave bulk acoustic wave delay devices.

TELEVISION EHT TRANSFORMERS

Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Contextual Info: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes

CCC-910

Contextual Info: FUJITSU MICROELECTRONICS 70 3749762 FUJITSU MICROELECTRONICS D e | 3 ? L H 7 b E D O O STET 78C 02929 ^ J 0^^13-/S Preliminary M O S M M e m FU JITSU o r ie s B 8 1 1 0 0 0 -1 2 , M B 8 1 1 0 0 0 -1 5 1,048,576-Bit Dynamic Random Access Memory Description

MB811000-12

Abstract: MB811000-15 MB511000-12
Contextual Info: Prelim inary F U J IT S U MOS Memories MB 8 1 10 00 -1 2 , MB 8 1 10 0 0 -1 5 1,048,576-Bit Dynamic Random Access Memory Description The Fujitsu MB811000 is a fully decoded, dynamic NMOS random access memory organized as 1,048,576 one-bit words. The design