bgjg
Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
Contextual Info: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control
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-0ciBLF542
0D43TS4
OT171
PINNING-SOT171
MBA931
MRA971
bgjg
transistor T
philips 2322 733
BLF542
UFU370
3a0c
2222 030 capacitor philips
philips potentiometer
43t transistor
3909
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MRA359
Abstract: MDA536 BLV103 MRA364
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for
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BLV103
MRA359
MDA536
BLV103
MRA364
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4312 020 36640
Abstract: BLF543 MDA489 MRA991
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF543 UHF power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF543 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability
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BLF543
MBA931
OT171
4312 020 36640
BLF543
MDA489
MRA991
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mrc102
Abstract: MRC100 mrc101 MRC103 BLV194
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV194 UHF power transistor Product specification January 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures
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BLV194
OT171
mrc102
MRC100
mrc101
MRC103
BLV194
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Philips 2222-030
Abstract: philips resistor 2322 4312 020 36640 philips catalog potentiometer 100 pf, ATC Chip Capacitor 100A BLF543 enamelled copper wire MDA487 class b power transistors datasheet current gain IEC -320 C14
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF543 UHF power MOS transistor Product specification File under Discrete Semiconductors, SC08b October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF543 PIN CONFIGURATION • High power gain
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BLF543
SC08b
MBB072
MBA931
OT171
Philips 2222-030
philips resistor 2322
4312 020 36640
philips catalog potentiometer
100 pf, ATC Chip Capacitor 100A
BLF543
enamelled copper wire
MDA487
class b power transistors datasheet current gain
IEC -320 C14
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MRA250
Abstract: BLF522 MRA990
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF522 UHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF522 PIN CONFIGURATION • High power gain • Easy power control • Gold metallization
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BLF522
MBB072
OT171
MRA250
BLF522
MRA990
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Contextual Info: Philips Semiconductors ^53= 131 0030 1 2 b TO? • APX ^roductspecjfjcat^ UHF power MOS transistor BLF544 N AUER PHILIPS/DISCRETE FEATURES b'iE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures
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BLF544
OT171
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BJE 42
Abstract: 9 BJE 42
Contextual Info: Philips S em iconductors bbS3R31 003010b H R Ap y Product spec if ication UHF power MOS transistor BLF542 N AMER PHILIPS/DISCRETE FEATURES bRE T> PIN CONFIGURATION • High power gain < • Easy power control • Gold metallization '" " “v o • Good thermal stability
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bbS3R31
003010b
BLF542
MBA931
MRA732
MRA971
BJE 42
9 BJE 42
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BLF542
Abstract: MBB778
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor Product specification File under Discrete Semiconductors, SC08b October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF542 PIN CONFIGURATION • High power gain
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BLF542
SC08b
MBB072
OT171
BLF542
MBB778
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1 Fp 33 transistor
Abstract: MRA552 MRA553 MRA554 BLV193 SOT171 101 DISC CAPACITOR definition CAPACITOR 2222 427 MRA555 MRA560
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV193 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures
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BLV193
OT171
1 Fp 33 transistor
MRA552
MRA553
MRA554
BLV193
SOT171
101 DISC CAPACITOR definition
CAPACITOR 2222 427
MRA555
MRA560
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mda540
Abstract: BLV100
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV100 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES BLV100 PIN CONFIGURATION • Internal input matching to achieve high power gain • Ballasting resistors for an optimum
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BLV100
OT171
mda540
BLV100
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BLF542
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF542 PIN CONFIGURATION • High power gain • Easy power control halfpage
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BLF542
MBB072
OT171
BLF542
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BLF542
Abstract: UBB776
Contextual Info: Philips Semiconductors 003010b HR M APX Product specification UHF power MOS transistor BLF542 N AMER PHILIPS/DISCRETE FEATURES b^E T> PIN CONFIGURATION • High power gain • Easy power control o • Gold metallization • Good thermal stability • Withstands full load mismatch
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GG3G10b
BLF542
OT171
PINNING-SOT171
MBA931
MRA733
BLF542
UBB776
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MRA253
Abstract: BLF522 MRA24S P101 saia
Contextual Info: Philip^emiconducto^ H ^ 53^ 31 OOBOOT? 3flb H A P X Pr<KiuctsPecification UHF power MOS transistor ^ BLF522 ^ FEATURES N AMER PHILIPS/DISCRETE b'lE T> PIN CONFIGURATION • High power gain • Easy power control r- o • Gold metallization • Good thermal stability
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BLF522
OT171
PINNING-SOT171
MBB072
MBA931
MBA379
URA24S
MRA253
BLF522
MRA24S
P101
saia
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