MB7500 Search Results

MB-7500

Abstract: 130 nm CMOS standard cell library ST
Contextual Info: Mrüll electronic June 1992 ASIC HI-REL DATA SHEET MB GATE ARRAY SERIES - 2\U2 METAL LAYERS MB 850 - MB 1300 - MB 2000 - MB 2700 - MB 3200 MB 4000 - MB 5000 - MB 6600 - MB 7500 FEATURES ADVANCED SILICON GATE CMOS PROCESS : - two metal level - 2 micron drawn channel length

Matra-Harris Semiconductor

Abstract: MB-7500 pn sequence generator using d flip flop H749 H741 matra harris gate array H7444 INVP inverter MB-4000 multi 9 ihp 1c
Contextual Info: MB GATE ARRAY SERIES 2/J2 METAL LAYERS Illììlilll //ATRA•HAI<’RISSEMICONullUOR MB 850 - MB 1300 - MB 2000 MB 2700 - MB 4000 - MB 5000 -MB 7500 MAY 1986 ¡U M IN À H V Features MACRO CELL LIBRARY EXTENSION CAPABILITY : - COMBINATIONAL AND SEQUENTIAL

Contextual Info: » H Y U N D A I H Y M 5 3 6 8 1 0 A M - S e r ie s 8M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or 7SOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit

RQW 130

Abstract: A10q
Contextual Info: HY51V16400A Series •HYUNDAI 4M X 4-bit CM OS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide

H7442

Abstract: Matra-Harris Semiconductor
Contextual Info: MB GATE ARRAY SERIES 2/t/2 METAL LAYERS M ÌM ÌIII /MATRA' HARRIS SEMICONDUCTOR MB 850 • MB 1300 • MB 2000 MB 2700 • MB 4000 - MB 5000 -MB 7500 MAY 1986 PR B LÎISIÈ S A R V Features MACRO CELL LIBRARY EXTENSION CAPABILITY : - COMBINATIONAL AND SEQUENTIAL