MAY03 Search Results

c216842

Contextual Info: DO NOT SCALE DIMENSIONS - ► IN T H IR D METRIC mm ANGLE P R O JE C T IO N X o 1 \ \ NOTES o TT - - / 1 [ mm. /, b A max. 1 1 , 0 * & PHOSPHORBRONZE - c1 , 6D I A /> \ 8 „5 1 p 2 , 75 1 2,54pm 5n 1 , 25pm MIN. PLA T IN G : # 4 HD/THICKNESS

Contextual Info: DO NOT SCALE D IM E N S IO N S IN THIRD ANGLE METRIC mm PROJECTION •1 2 , 2 5 - 1 2 ,2 5 S E C T IO N 4 x 2 ,0 = 8 ,0 S E C T IO N B -B B -B 4 9 ,9 20,2 ■21 ,9 8 ,8 7" :x. D liiigiiiiii ii i i i 1 1 ,4 1 0 ,9 5 3 ,3 i ô Ô ■— if X. \j \j u 3 ,7 \

valox 420 seo material specification

Abstract: EIA-364-13 EIA-364-20 EIA-364-21 EIA-364-27 EIA-364-28
Contextual Info: 108-1657-2 Product Specification 23Jul03 Rev A EC 0990-0838-03 Pivot II Connector, Two Pair 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the Tyco Electronics Two Pair Pivot II Connector. This connector accepts two wires for each wire stuffer pair for power drop in

Contextual Info: BBY 57-02W Silicon Tuning Diode • Excellent linearity • High Q hyperabrupt tuning diode 2 • Low series inductance • High capacitance ratio • Designed for low tuning voltage operation 1 for VCO's in mobile communications equipment VES05991 • For control elements such as TCXOs and VCXOs

SGP30N60HS

Abstract: SGW30N60HS 3UAT
Contextual Info: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

SGP15N120

Abstract: Q67040-S4274 Q67040-S4275 Q67040-S4276 SGB15N120 SGW15N120
Contextual Info: SGP15N120 SGB15N120 SGW15N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution

15v 60w smps

Abstract: SGI02N120 SGB02N120 SGD02N120 SGP02N120 SGP02N120 equivalent
Contextual Info: SGP02N120, SGD02N120, SGB02N120 SGI02N120 Fast IGBT in NPT-technology • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution

smd transistor marking vbg

Contextual Info: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK201-50Y DESCRIPTION BUK205-50Y QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount

MOSFET TRANSISTOR SMD MARKING CODE nh

Abstract: smd transistor marking A5
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION BUK108-50DL QUICK REFERENCE DATA Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a

TRANSISTOR SMD MARKING CODE spt

Abstract: ta114 Marking Code For SMD Devices SMD PNP MARKING DE PDTA114
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA114T series PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open Product specification Supersedes data of 1999 Apr 13 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open

Contextual Info: INTEGRATED CIRCUITS 74ABT16899 74ABTH16899 18-bit latched transceiver with 16-bit parity generator/checker 3-State Product specification Supersedes data of 1997 Mar 28 IC23 Data Handbook Philips Semiconductors 1998 Feb 25 Philips Semiconductors Product specification

PDTC143EK

Abstract: PDTC143E
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 1999 Apr 15 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;

GBK201209T-151Y-N

Abstract: OS13
Contextual Info: n 7 T H I S DRAWING JÊL C OPYRIGHT I S U N PU B L IS H E D . 19 R E L E A S E D FOR P U B L I C A T I O N BY AMP INCORPORATED. 6 4 5 3 2 LOG , 19 ALL R IG H T S R ES E R V E D . GP DI ST REVISIONS 00 DESCRIPTION R E V I S E D PER EC 0 5 1 3 - 0 1 5 7 - 0 3

9 pin d type connector

Abstract: SR10
Contextual Info: DO NOT SCALE DIMENSIONS 25 THIRD ANGLE METRIC IN m m PROJECTION SECTION A -A A 4 9 , 9- IW I IW I M M m B I B gb u s fw l M W M w A M w a M w r w § B S B IK a ÜQ 0 ,9 5 Ü iiii m Ô - m m m B- ÔI S-ô -Ô - Ô - ra rs - Ô - r w i

Contextual Info: BBY 56-03W Silicon Tuning Diode 2
Excellent linearity 1
High Q hyperabrupt tuning diode
Low series inductance
Designed for low tuning voltage operation for VCO's in mobile communications equipment
Very low capacitance spread VPS05176 Type Marking

Contextual Info: R E V 1S I O N S 930-1I6J-5IP NOTES: I . M A T E R I A L S AND F I N I S H E S : BODY - B R A S S , GOL D O V E R W H I T E B R ON Z E P L A T I N G C O N T A C T - B e C u , GOL D O V E R W H I T E B R ON Z E P L A T I N G INSULATOR - PTFE 2 . ELECTRICAL:

Contextual Info: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)

Contextual Info: 4 3 THIS DRAWING IS UNPUBUSHED. | RELEASED FOR PUBLICATION - ,- 1 2 . LOC ALL RIGHTS RESERVED. DIST CM 00 R E V IS IO N S 1 LTR DATE D A 0 .3 8 2. MAX C U T -O F F A D E T A IL A 5 .0 8 [ . 2 0 0 ] M IN L O C A L IZ E D G O L D PLATE AREA 3 .4 3 r 2 . 92^

Contextual Info: コンプリメンタリーパワー MOSFET ELM35603KA-S •概要 ■特長 ELM35603KA-S は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=40V 性を備えた大電流 MOSFET です。 ・ Id=10A

jrc 2901

Abstract: 20pin IC AL 6001 2901 jrc U435 MOROCCO 0X00 DIP20 HE10 SO20 ST7LITE10 ST7LITE15
Contextual Info: ST7LITE1 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 4 TIMERS, SPI DATASHEET Memories – 4 Kbytes single voltage extended Flash XFlash Program memory with read-out protection, In-Circuit Programming and In-Application programming (ICP and IAP). 10K write/

SKW30N60HS

Abstract: IGBT SKW30N60HS Q67040-S4503
Contextual Info: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

SMD transistor MARKING CODE 43

Abstract: TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD MARKING CODE 42 SMD Transistor A1 TC114E smd TRANSISTOR code marking 36 smd TRANSISTOR code marking 013 Transistor SMD marking code NV smd transistor 023 TRANSISTOR SMD MARKING CODE X D
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Product specification Supersedes data of 1999 May 31 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistor;

Transient Voltage Suppressor diode application no

Abstract: rz 7888
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D184 BZA109 9-fold ESD transient voltage suppressor Product specification Supersedes data of 1997 Oct 27 File under Discrete Semiconductors, SC01 1997 Dec 01 Philips Semiconductors Product specification

cfldr64

Abstract: AC97 EP9312 cfstr64
Contextual Info: 5/29/03 Errata: EP9312 Rev D0 Reference EP9312 Data Sheet revision DS515PP4 dated May ‘03 AC97 Description In certain configurations, the AC97 FIFO will generate spurious writes to some channels, thus corrupting the output audio sample stream. The configurations with potential failures are listed as follows: