MAXIMUM IDSS FET Search Results

TRANSISTOR 187

Abstract: fkv550 2sk2943 2SK1185 2SK3460 2SK2710a 2SK3724
Contextual Info: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions ID VDS (V) (µA) −60

N3001

Abstract: TF218
Contextual Info: Ordering number : ENN7088 TF218 N-channel Silicon Junction FET TF218 Capacitor Microphone Applications 0.2 • [TF218] 1.4 0.25 0.07 • unit : mm 2201 3 2 0.45 1 0.07 • Ultrasmall package facilitates miniaturization in end products. Especially suited for use in audio, telephone capacitor

A0201

Abstract: TF202B
Contextual Info: TF202B Ordering number : ENA0201 TF202B N-channel Silicon Junction FET Condenser Microphone Applications Features • • • • • Especially suited for use in condenser microphone for audio equipments and telephones. TF202B is possible to make applied sets smaller and thinner

ISO220 package

Abstract: MWT273HP MwT-273 ISO220
Contextual Info: MwT-2 26 GHz High Power GaAs FET M ic r o W a v e T e c h n o l o g y Units in urn • • • • • +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES

Contextual Info: EC4A01LF Ordering number : EN8714 EC4A01LF N-Channel Silicon Junction FET Condenser Microphone Applications Features • • • • • • Ultrasmall 1710 size , thin (0.35mm) leadless package. Especially suited for use in condenser microphone for audio equipments and telephones.

EC3A01B

Abstract: TA-3160
Contextual Info: Ordering number : ENN6612 EC3A01B N-Channel Silicon Junction FET EC3A01B Capacitor Microphone Applications Features • 0.15 0.15 0.05 1 2 0.25 0.4 0.65 0.25 • [EC3A01B] 0.35 0.2 3 0.5 1.0 • Ultrasmall 1006 size , thin (0.5mm) leadless package. unit : mm

TA-3161

Abstract: EC4A01C It02310 13001 fet
Contextual Info: Ordering number : ENN6613 EC4A01C N-Channel Silicon Junction FET EC4A01C Capacitor Microphone Applications 0.05 • 0.5 0.2 3 4 2 1 1 : Base 2 : Emitter 3 : Collector 4 : Collector 0.05 0.6 Bottom view 1.0 • [EC4A01C] 0.05 • 0.3 • Package Dimensions

EC3A01T

Abstract: ECSP1006-3
Contextual Info: Ordering number : ENN7617 EC3A01T N-Channel Silicon Junction FET EC3A01T Electret Condenser Microphone Applications Features Bottom View Top View 1 1.0 1 0.05 • [EC3A01T] 0.05 0.65 • unit : mm 2223 0.25 • Ultrasmall 1006 size and thin (0.35mm) leadless

Contextual Info: ET MwT-3 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y Units in iim ►j 50 p • • • • • +21 DBM OUTPUT POWER AT 12 GHZ 11 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAL/GOLD GATE 300 MICRON GATE WIDTH CHOICE OF CHIP AND THREE

Contextual Info: TF202THC Ordering number : ENA1285 SANYO Semiconductors DATA SHEET N-channel Silicon Juncton FET TF202THC Electret Condenser Microphone Applications Features • • • • • • Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones.

A1285

Abstract: electret condenser microphone datasheets tf202thc
Contextual Info: TF202THC Ordering number : ENA1285 SANYO Semiconductors DATA SHEET N-channel Silicon Juncton FET TF202THC Electret Condenser Microphone Applications Features • • • • • • Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones.

FET FH1G

Abstract: 8550 SOT-89 angS21 FH1G 8050 sot 89 8050 sot89 fh1g smd FH101 FH101-G JESD22-A114
Contextual Info: FH101 The Communications Edge Product Information High Dynamic Range FET Product Features • 50-3000 MHz Bandwidth • +36 dBm Output IP3 • 1.2 dB Noise Figure • 18 dB Gain • +18 dBm P1dB • Single or Dual Supply Operation • MTBF >100 Years • SOT-89 SMT Package

Contextual Info: 2SK1578 Ordering number : EN4178B SANYO Semiconductors DATA SHEET 2SK1578 N-channel Junction FET Electret Condenser Microphone Applications Features • • • • Especially suited for use in electret condenser microphone for audio equipments and telephones.

Contextual Info: TF202C Ordering number : ENA0727 SANYO Semiconductors DATA SHEET N-channel Silicon Junction FET TF202C Electret Condenser Microphone Applications Features • • • • • Especially suited for use in electret condenser microphone for audio equipments and telephones.

Contextual Info: TF252 Ordering number : ENA0841A SANYO Semiconductors DATA SHEET N-channel Silicon Junction FET TF252 Electret Condenser Microphone Applications Features • • • • • • • • High gain : GV=1.0dB typ VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz

Contextual Info: TF252 Ordering number : ENA0841 SANYO Semiconductors DATA SHEET TF252 N-channel Silicon Junction FET Electret Condenser Microphone Applications Features • • • • • • • High gain : GV=1.0dB typ VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz . Ultrasmall package facilitates miniaturization in end products [1.0mm✕0.6mm✕0.27mm (max 0.3mm)].

Contextual Info: MwT-A1 12 GHz High Gain GaAs FET M ic r o w a v e T e c h n o l o g y Units in tun I T 10 dB GAIN A T 12 GHz EXCELLENT FOR FEEDBACK AMPLIFIER APPLICATIONS 100 MHz T O 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE

mwt-970

Abstract: 16662 ic 74390 61787
Contextual Info: MwT-9 M ic r o w ave 18 GHz High Power GaAs FET T echno lo g y ri iiiniiiMiiii! +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES - • _ I

H273

Contextual Info: MwT - H2 W 26 GHz High Power Pseudomorphic HEMT GaAs FET MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES ' +23 DBM OUTPUT POWER AT 12 GHZ * 10 DB SMALL SIGNAL GAIN AT 12 GHZ •0 .3 MICRON REFRACTORY METAL/ GOLD GATE

Device Handling Procedure

Abstract: Application Notes
Contextual Info: FET Application Notes Supplimentary Information Device Handling Procedure 1 Open package in clean room environment only. 2) GaAs FETs are sensitive to electrostatic discharge. Precautions should be taken in handling, die attachment, and bonding to assure that Maximum Ratings are not exceeded as a result of electrical discharge.

LD 8164

Abstract: ic lg 631
Contextual Info: MwT-9 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y r,!i 6/ löSmmjuir +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES rAï

Contextual Info: MwT-14 _ 12 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y • 2 WATT POWER OUTPUT AT 6 GHz • HIGH ASSOCIATED GAIN • 0.3 MICRON REFRACTORY METAI7GOLD GATE • 5 mm GATE WIDTH • DIAMOND-LIKE CARBON DLC PASSIVATION DESCRIPTION

596S

Abstract: 2SK596S 2SK596S-A A0944 2SK596SB 2SK596
Contextual Info: 2SK596S Ordering number : ENA0944 SANYO Semiconductors DATA SHEET N-channel Silicon Juncton FET 2SK596S Electret Condenser Microphone Applications Features • • • • Low output noise voltage : VNO=-110dB max VCC=4.5V, RL=1kΩ, Cin=15pF, VIN=0V, A curve

MwT-371

Abstract: 371 fet
Contextual Info: MwT-3 26 GHz High Power GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns CHIP THICKNESS = 125 FEATURES 50 • 11 dB SMALL SIGNAL GAIN AT 12 GHz • +21.0 dBm OUTPUT POWER AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 300 MICRON GATE WIDTH