MAX247 DATASHEET Search Results

STY145N65M5

Contextual Info: STY145N65M5 N-channel 650 V, 0.012 Ω typ., 138 A, MDmesh V Power MOSFET in Max247 package Datasheet — preliminary data Features Order code VDSS @TJmax RDS on max ID STY145N65M5 710 V < 0.015 Ω 138 A • Max247 worldwide best RDS(on) ■ Higher VDSS rating

139N65M5

Abstract: STY139N65M5
Contextual Info: STY139N65M5 N-channel 650 V, 0.014 Ω, 130 A, MDmesh V Power MOSFET in Max247 package Datasheet — production data Features Order code VDSS @TjMAX RDS on max ID STY139N65M5 710 V < 0.017 Ω 130 A • Max247 worldwide best RDS(on) ■ Higher VDSS rating

STY105NM50N

Abstract: 105NM50N
Contextual Info: STY105NM50N N-channel 500 V, 0.019 Ω typ., 110 A, MDmesh II Power MOSFET in a Max247 package Datasheet — production data Features Order code VDSS @TjMAX RDS on max ID STY105NM50N 550 V < 0.022 Ω 110 A • Max247 worldwide best RDS(on) ■ 100% avalanche tested

145n65m5

Contextual Info: STY145N65M5 N-channel 650 V, 0.012 Ω typ., 138 A, MDmesh V Power MOSFET in Max247 package Datasheet — preliminary data Features Order code VDSS @TJmax RDS on max ID STY145N65M5 710 V < 0.015 Ω 138 A • Max247 worldwide best RDS(on) ■ Higher VDSS rating

Contextual Info: STY139N65M5 N-channel 650 V, 0.014 Ω typ., 130 A, MDmesh V Power MOSFET in Max247 package Datasheet — production data Features Order code VDS @TjMAX RDS on max ID STY139N65M5 710 V 0.017 Ω 130 A • Max247 worldwide best RDS(on) ■ Higher VDSS rating

Contextual Info: STY105NM50N N-channel 500 V, 0.019 Ω typ., 110 A, MDmesh II Power MOSFET in a Max247 package Datasheet - production data Features Order code VDSS @TjMAX RDS on max ID STY105NM50N 550 V < 0.022 Ω 110 A • Max247 worldwide best RDS(on) 1 2 • 100% avalanche tested

JESD97

Abstract: STY80NM60N 80NM60N
Contextual Info: STY80NM60N N-channel 600 V, 0.030 Ω, 74 A, MDmesh II Power MOSFET Max247 Features Type VDSS @ TJmax RDS on max ID STY80NM60N 650 V < 0.035 Ω 74 A • The worldwide best RDS(on) in Max247 ■ 100% avalanche tested ■ Low input capacitance and gate charge

STY80NM60N

Abstract: 80NM60N
Contextual Info: STY80NM60N N-channel 600 V, 0.030 Ω, 74 A, MDmesh II Power MOSFET Max247 Features Type VDSS @ TJmax RDS on max ID STY80NM60N 650 V < 0.035 Ω 74 A • The worldwide best RDS(on) in Max247 ■ 100% avalanche tested ■ Low input capacitance and gate charge

14210

Contextual Info: STY80NM60N N-channel 600 V, 0.030 Ω, 74 A, MDmesh II Power MOSFET Max247 Features Type VDSS @ TJmax RDS on max ID STY80NM60N 650 V < 0.035 Ω 74 A • The worldwide best RDS(on) in Max247 ■ 100% avalanche tested ■ Low input capacitance and gate charge

STY80NM60N

Abstract: 80nm60 JESD97
Contextual Info: STY80NM60N N-channel 600 V, 0.030 Ω, 74 A, MDmesh II Power MOSFET Max247 Features Type VDSS @ TJmax RDS on max ID STY80NM60N 650 V < 0.035 Ω 74 A • The worldwide best RDS(on) in Max247 ■ 100% avalanche tested ■ Low input capacitance and gate charge

100nF

Abstract: STY112N65M5
Contextual Info: STY112N65M5 N-channel 650 V, 0.019 Ω, 96 A, MDmesh V Power MOSFET Max247 Features Order code VDSS @TjMAX RDS on max ID STY112N65M5 710 V < 0.022 Ω 96 A • Max247 worldwide best RDS(on) ■ Higher VDSS rating ■ Higher dv/dt capability ■ Excellent switching performance

gy-80

Contextual Info: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current

Contextual Info: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, H series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current

Contextual Info: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current

Contextual Info: STY130NF20D N-channel 200 V, 0.01 Ω typ., 130 A STripFET II with fast recovery diode Power MOSFET in a Max247 package Datasheet - production data Features Order code VDS RDS on max. STY130NF20D 200 V 0.012 Ω ID PTOT 130 A 450 W • Exceptional dv/dt capability

100NM60N

Abstract: STY100NM60N
Contextual Info: STY100NM60N N-channel 600 V, 0.028 Ω typ., 98 A MDmesh II Power MOSFET in a Max247 package Datasheet — production data Features Type VDSS @ TJmax RDS on max ID STY100NM60N 650 V < 0.029 Ω 98 A • 100% avalanche tested ■ Low input capacitance and gate charge

STPS80L15CY

Contextual Info: STPS80L15CY  LOW DROP OR-ing POWER SCHOTTKY RECTIFIER PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS A1 K IF AV 2 x 40 A VRRM Tj (max) 15 V 125 °C VF (max) 0.33 V A2 FEATURES AND BENEFITS A2 K Max247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V

STY112

Abstract: 112N65 STY112N65M5
Contextual Info: STY112N65M5 N-channel 650 V, 0.019 Ω, 96 A, MDmesh V Power MOSFET in Max247 package Datasheet — production data Features Order code VDSS @TjMAX RDS on max ID STY112N65M5 710 V < 0.022 Ω 96 A • Higher VDSS rating ■ Higher dv/dt capability ■ Excellent switching performance

Contextual Info: STPS80L15CY LOW DROP OR-ing POWER SCHOTTKY RECTIFIER PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS A1 K IF AV 2 x 40 A VRRM 15 V Tj (max) 125 °C VF (max) 0.33 V A2 FEATURES AND BENEFITS A2 K Max247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V

Contextual Info: £t7 STPS80L15CY LOW DROP OR-ing POWER SCHOTTKY RECTIFIER PR ELIM IN ARY DATASHEET MAIN PRODUCT CHARACTERISTICS If av 2 x40 A V rrm 15 V Tj (max) 125 °C V f (max) 0.33 V FEATURES AND BENEFITS • Max247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A ■ 15V BLOCKING VOLTAGE SUITABLE FO R 5V

STPS80L15CY

Contextual Info: STPS80L15CY LOW DROP OR-ing POWER SCHOTTKY RECTIFIER PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS A1 K IF AV 2 x 40 A VRRM 15 V Tj (max) 125 °C VF (max) 0.33 V A2 FEATURES AND BENEFITS n n n n n Max247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V

STPS80L15CY

Contextual Info: STPS80L15CY LOW DROP OR-ing POWER SCHOTTKY RECTIFIER PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS A1 K IF AV 2 x 40 A VRRM 15 V Tj (max) 125 °C VF (max) 0.33 V A2 FEATURES AND BENEFITS n n n n n Max247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V

TH 2190 mosfet isolated

Abstract: th 2190 TH 2190 mosfet schematic diagram of energy saving device STY130NF20D
Contextual Info: STY130NF20D N-channel 200 V, 0.01 Ω, 130 A, Max247 low gate charge STripFET II Power MOSFET Features Type VDSS RDS on max STY130NF20D 200 V < 0.012 Ω • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge ID PW 130 A 450 W 1

Y30NK90Z

Abstract: STY30NK90Z schematic diagram welding device diode equivalent
Contextual Info: STY30NK90Z N-CHANNEL 900V - 0.21Ω - 26A Max247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE STY30NK90Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 900 V < 0.26 Ω 28 A 500 W TYPICAL RDS(on) = 0.25 Ω EXTREMELY HIGH dv/dt CAPABILITY