MAX-410 EQUIVALENT Search Results

SCHEMATIC DIAGRAM OF POWER SAVER DEVICE

Abstract: delta plc cable pin diagram RS-232 PLC based PROJECTS MAX420 delta plc cable pin diagram RS-485 32 line to 5 encoder IC AC 240V Motor Speed Controller OPTO-5 schematic diagram RPM meter wiring diagram timer motor start delta
Contextual Info: MAX-410 & MAX-420 USERS GUIDE Table of Contents MAX-410 & MAX-420 USERS GUIDE Revision Date: 03/02/2010 Ad va nc e d M ic r o S ys te ms , I nc . | www. s t e p c o nt r o l. c o m i MAX-410 & MAX-420 USERS GUIDE [Pick the date] 1 Introduction . 5

IBM0144051M

Abstract: IBM014405B1M IBM014405M1M IBM014405P1M
Contextual Info: IBM0144051M x 410/10, 5.0V, EDO. IBM014405P1M x 410/10, 3.3V, EDO, LP, SR. IBM014405M1M x 410/10, 5.0V, EDO, LP, SR. IBM014405B1M x 410/10, 3.3V, EDO. IBM014405 IBM014405B 1M x 4 10/10 EDO DRAM Features • 1,048,576 word by 4 bit organization - Active max

SCHEMATIC DIAGRAM OF POWER SAVER DEVICE

Abstract: BLUEMAX bluetooth dongle 24VDC push button 3 phase 200 VAC servo drive schematic AC 240V Motor Speed Controller bluetooth RS232 TTL laptop adapter circuit by delta electronics wiring diagram motor start delta wiring diagram timer motor start delta
Contextual Info: BLUEMAX-410 & -420 USERS GUIDE Table of Contents BLUEMAX MAX-410 & -420 BLUE MAX USERS GUIDE Revision Date: 05/20/2010 Ad va nc e d M ic r o S ys te ms , I nc . | www. s t e p c o nt r o l. c o m i BLUEMAX-410 & -420 USERS GUIDE 1 Table of Contents Introduction . 5

SSM3K107TU

Contextual Info: SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit: mm Ron = 410 mΩ max (@VGS = 4V) Ron = 200 mΩ (max) (@VGS = 10V) 2.1±0.1 Symbol Rating Unit Drain–source voltage VDS 20 V Gate–source voltage

SSM3K107TU

Contextual Info: SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit: mm Ron = 410 mΩ max (@VGS = 4V) Ron = 200 mΩ (max) (@VGS = 10V) 2.1±0.1 Symbol Rating Unit Drain–source voltage VDS 20 V Gate–source voltage

SSM3K107TU

Contextual Info: SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit: mm Ron = 410 mΩ max (@VGS = 4V) Ron = 200 mΩ (max) (@VGS = 10V) 2.1±0.1 Symbol Rating Unit Drain–source voltage VDS 20 V Gate–source voltage

Contextual Info: SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications • 4 V drive • Low ON-resistance: Unit: mm 2.1±0.1 Ron = 410 mΩ max (@VGS = 4V) Characteristic Symbol Rating Unit Drain–source voltage

8002B

Abstract: SSM3K107TU
Contextual Info: SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications • 4 V drive • Low ON-resistance: Unit: mm 2.1±0.1 Ron = 410 mΩ max (@VGS = 4V) Characteristic Drain–source voltage Rating Unit VDS

d12s60

Abstract: 2N3904 2N3906
Contextual Info: D Series D12S60 12 Volt Input Dc to Ac Inverter .100 [2,54] 6 3 4 1 .175 [4,45] 5 .300 [7,62] 2.250 [57,15] .38 [9,65] Max .250 [6,35] 6X 2.866 [72,80] .149 [3,78] .200 [5,08] .624 [15,85] 2.630 [66,8] .410 [10,41] The D12S60 is a generic dc to ac inverter designed to generate 6 mArms into a 350 - 550 volt load

SHD114211

Abstract: SHD114211A SHD114211B
Contextual Info: SHD114211 SHD114211A SHD114211B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1047, REV. - POWER SCHOTTKY RECTIFIER Very Low Voltage Drop S-100 for JANTXV equivalent screening; SS for JANS equivalent screening available DESCRIPTION: A 30 VOLT, 15 AMP, POWER SCHOTTKY RECTIFIER IN A HERMETIC SHD-3/3A/3B PACKAGE.

Contextual Info: SHD114211 SHD114211A SHD114211B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1047, REV. A POWER SCHOTTKY RECTIFIER Very Low Voltage Drop S-100 for JANTXV equivalent screening; SS for JANS equivalent screening available DESCRIPTION: A 30 VOLT, 15 AMP, POWER SCHOTTKY RECTIFIER IN A HERMETIC SHD-3/3A/3B PACKAGE.

SHD114211

Abstract: SHD114211A SHD114211B
Contextual Info: SHD114211 SHD114211A SHD114211B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1047, REV. - POWER SCHOTTKY RECTIFIER Very Low Voltage Drop S-100 for JANTXV equivalent screening; SS for JANS equivalent screening available DESCRIPTION: A 30 VOLT, 15 AMP, POWER SCHOTTKY RECTIFIER IN A HERMETIC SHD-3/3A/3B PACKAGE.

SHD114211

Abstract: SHD114211A SHD114211B
Contextual Info: SHD114211 SHD114211A SHD114211B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1047, REV. - POWER SCHOTTKY RECTIFIER Very Low Voltage Drop S-100 for JANTXV equivalent screening; SS for JANS equivalent screening available DESCRIPTION: A 30 VOLT, 15 AMP, POWER SCHOTTKY RECTIFIER IN A HERMETIC SHD-3/3A/3B PACKAGE.

Contextual Info: SHD114623 SHD114623A SHD114623B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4121, REV. B POWER SCHOTTKY RECTIFIER Very Low Voltage Drop S-100 for JANTXV equivalent screening and SS for JANS equivalent screening is available DESCRIPTION: A 60 VOLT, 120 AMP, POWER SCHOTTKY RECTIFIER IN A HERMETIC SHD-3/3A/3B PACKAGE.

SHD114534

Abstract: SHD114534A SHD114534B
Contextual Info: SHD114534 SHD114534A SHD114534B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1026, REV. A HERMETIC POWER SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200°C Operating Temperature S-100 for JANTXV equivalent screening; SS for JANS equivalent screening available

Contextual Info: SHD114534 SHD114534A SHD114534B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1026, REV. B HERMETIC POWER SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200 C Operating Temperature S-100 for JANTXV equivalent screening; SS for JANS equivalent screening available

SHD114534

Abstract: SHD114534A SHD114534B
Contextual Info: SHD114534 SHD114534A SHD114534B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1026, REV. PRELIMINARY HERMETIC POWER SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200•C Operating Temperature S-100 for JANTXV equivalent screening; SS for JANS equivalent screening available

SHD114623

Abstract: SHD114623A SHD114623B Schottky rectifier 3A 60v
Contextual Info: SHD114623 SHD114623A SHD114623B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4121, REV. A POWER SCHOTTKY RECTIFIER Very Low Voltage Drop S-100 for JANTXV equivalent screening and SS for JANS equivalent screening is available DESCRIPTION: A 60 VOLT, 120 AMP, POWER SCHOTTKY RECTIFIER IN A HERMETIC SHD-3/3A/3B PACKAGE.

Contextual Info: 138D www.vishay.com Vishay Wet Tantalum Capacitors Silver Case TANTALEX Capacitors Hermetically-Sealed FEATURES • Terminations: axial, standard tin / lead SnPb , 100 % tin (RoHS-compliant) available Available • Model 138D is the commercial equivalents of

138D336X0050C2

Contextual Info: 138D www.vishay.com Vishay Wet Tantalum Capacitors Silver Case TANTALEX Capacitors Hermetically-Sealed FEATURES • Terminations: Axial, standard tin/lead SnPb , 100 % tin (RoHS-compliant) available • Model 138D is the commercial equivalents of Tansitor styles WT, UWT, Mallory-NACC styles

Contextual Info: NBSG16 2.5V/3.3V SiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com The SG16 is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices with much higher bandwidth and lower EMI capabilities.

Contextual Info: NBSG16 2.5V/3.3V SiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com The SG16 is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices with much higher bandwidth and lower EMI capabilities.

Contextual Info: NBSG16 2.5V/3.3VĄSiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com The SG16 is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices with much higher bandwidth and lower EMI capabilities.

qfn-16 352

Contextual Info: NBSG16 2.5V/3.3V SiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com The NBSG16 is a differential receiver/driver targeted for high frequency applications. The device is functionally equivalent to the EP16 and LVEP16 devices with much higher bandwidth and lower