MAX 550 TRANSISTOR Search Results

MSP55

Contextual Info: MSP55 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550ã V(BR)CBO (V)550 I(C) Max. (A)350m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: Miniature Transistors TYPE NO. BC146 BC146R BC146Y BC146G BC200 N N N N BC200R BC200Y BC200G BCW83 CL151-4 P P P IC VCE VCE sat max IC rr min N.F. m ai f min max (mA) (V) (V) (mA) (MHz) (dB) (Hz) 20 20 20 20 20 SO 550 80 200 140 350 280 550 50 400 0.2 0.2

MPS-A65

Contextual Info: Miniature Transistors TYPE POLA­ CASE NO. RITY H FE MAXIMUM RATINGS Pd It ^C E O mW (mA) (V) min max Ic ^C E (mA) (V) BC146 BC146R BC146Y BC146G N N N N MT-42 MT-42 MT-42 MT-42 50 50 50 50 50 50 50 50 20 20 20 20 80 80 140 280 550 200 350 550 0.2 0.2 0.2

Contextual Info: 2N5099 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550 V(BR)CBO (V)800 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N2222

Abstract: INA105 MAT03 OPA1013 OPA1013CN8 OPA1013CN8G4 OPA1013DN8 REF200 Burr-Brown IC free 4-20 n channel enhancement MOSFET
Contextual Info: OPA1013 Precision, Single-Supply DUAL OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● SINGLE POWER SUPPLY OPERATION INPUT VOLTAGE RANGE TO GROUND OUTPUT SWINGS NEAR GROUND LOW QUIESCENT CURRENT: 550µA max LOW VOS: 300µV max

LM324

Contextual Info: OPA1013 Precision, Single-Supply DUAL OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● SINGLE POWER SUPPLY OPERATION INPUT VOLTAGE RANGE TO GROUND OUTPUT SWINGS NEAR GROUND LOW QUIESCENT CURRENT: 550µA max LOW VOS: 300µV max

LM324

Contextual Info: OPA1013 Precision, Single-Supply DUAL OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● SINGLE POWER SUPPLY OPERATION INPUT VOLTAGE RANGE TO GROUND OUTPUT SWINGS NEAR GROUND LOW QUIESCENT CURRENT: 550µA max LOW VOS: 300µV max

2N2222

Abstract: INA105 MAT03 OPA1013 OPA1013CN8 OPA1013DN8 REF200 Burr-Brown IC free 4-20 SBOS005
Contextual Info: OPA1013 Precision, Single-Supply DUAL OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● SINGLE POWER SUPPLY OPERATION INPUT VOLTAGE RANGE TO GROUND OUTPUT SWINGS NEAR GROUND LOW QUIESCENT CURRENT: 550µA max LOW VOS: 300µV max

LM324-type

Abstract: Burr-Brown IC free 4-20 opa1013 REF200 2N2222 INA105 MAT03 OPA1013CN8 OPA1013DN8 n channel enhancement mosfet
Contextual Info: OPA1013 Precision, Single-Supply DUAL OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● SINGLE POWER SUPPLY OPERATION INPUT VOLTAGE RANGE TO GROUND OUTPUT SWINGS NEAR GROUND LOW QUIESCENT CURRENT: 550µA max LOW VOS: 300µV max

2N2222

Abstract: INA105 MAT03 OPA1013 OPA1013CN8 OPA1013DN8 REF200 Burr-Brown IC free 4-20
Contextual Info: OPA1013 Precision, Single-Supply DUAL OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● SINGLE POWER SUPPLY OPERATION INPUT VOLTAGE RANGE TO GROUND OUTPUT SWINGS NEAR GROUND LOW QUIESCENT CURRENT: 550µA max LOW VOS: 300µV max

design of a 4-20mA transmitter for a bridge type

Abstract: Lm324 comparator datasheet Lm324 window comparator datasheet 2N2222 INA105 MAT03 OPA1013 OPA1013CN8 OPA1013DN8 REF200
Contextual Info: OPA1013 Precision, Single-Supply DUAL OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● SINGLE POWER SUPPLY OPERATION INPUT VOLTAGE RANGE TO GROUND OUTPUT SWINGS NEAR GROUND LOW QUIESCENT CURRENT: 550µA max LOW VOS: 300µV max

Contextual Info: OPA1013 Precision, Single-Supply DUAL OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● SINGLE POWER SUPPLY OPERATION INPUT VOLTAGE RANGE TO GROUND OUTPUT SWINGS NEAR GROUND LOW QUIESCENT CURRENT: 550µA max LOW VOS: 300µV max

Contextual Info: TK6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.25 (typ.) High forward transfer admittance: |Yfs| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

Contextual Info: TK4P55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK4P55D Switching Regulator Applications 1.08±0.2 (typ.) Low drain-source ON-resistance: RDS (ON) = 1.5 High forward transfer admittance: ⎪Yfs⎪ = 2.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

Contextual Info: TK13A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK13A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.32 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

Contextual Info: TK4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK4A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

TK4A55DA

Contextual Info: TK4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 Ω(typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

Contextual Info: TK13A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.32 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

Burr-Brown IC free

Abstract: LM324-type ku 602 vc Burr-Brown IC free appendix B QPA1013CN8 Burr-Brown IC appendix d
Contextual Info: B U R R -B R O W N OPA1013 El AVAILABLE IN DIE APPLICATIONS • • • • • • • • • • • • • SINGLE POWER SUPPLY OPERATION INPUT VOLTAGE RANGE TO GROUND OUTPUT SWINGS NEAR GROUND LOW QUIESCENT CURRENT: 550^A max LOW Vpji 300 iV max LOW DRIFT: 2.5nV/°C max

TK8A55DA

Abstract: k8a55da
Contextual Info: TK8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK8A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 Ω(typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

Contextual Info: TK13A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.32 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

TK4A55DA

Abstract: Hints
Contextual Info: TK4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 Ω(typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

K6A55DA

Abstract: TK6A55DA K6A5 TK6A
Contextual Info: TK6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.26 Ω (typ.) High forward transfer admittance: |Yfs| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

Contextual Info: TK10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)