MAX 550 TRANSISTOR Search Results
MAX 550 TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| LM6161J |
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LM6161 - Operational Amplifier, 1 Func, 7000uV Offset-Max, BIPolar, CDIP8 |
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| ICL7662MTV/B |
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ICL7662 - Switched Capacitor Converter, 10kHz Switching Freq-Max, CMOS |
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| LM143H/883 |
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LM143 - Operational Amplifier, 1 Func, 6000uV Offset-Max, BIPolar, MBCY8 - Dual marked (7800303XA) |
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| LM107J/883 |
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LM107 - Operational Amplifier, 1 Func, 3000uV Offset-Max, BIPolar, CDIP8 - Dual marked (5962-8958901PA) |
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MAX 550 TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MSP55Contextual Info: MSP55 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550ã V(BR)CBO (V)550 I(C) Max. (A)350m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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MSP55 Freq40M | |
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Contextual Info: Miniature Transistors TYPE NO. BC146 BC146R BC146Y BC146G BC200 N N N N BC200R BC200Y BC200G BCW83 CL151-4 P P P IC VCE VCE sat max IC rr min N.F. m ai f min max (mA) (V) (V) (mA) (MHz) (dB) (Hz) 20 20 20 20 20 SO 550 80 200 140 350 280 550 50 400 0.2 0.2 |
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30-15K BC146 BC146R BC146Y BO-92F O-92A | |
MPS-A65Contextual Info: Miniature Transistors TYPE POLA CASE NO. RITY H FE MAXIMUM RATINGS Pd It ^C E O mW (mA) (V) min max Ic ^C E (mA) (V) BC146 BC146R BC146Y BC146G N N N N MT-42 MT-42 MT-42 MT-42 50 50 50 50 50 50 50 50 20 20 20 20 80 80 140 280 550 200 350 550 0.2 0.2 0.2 |
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BC146 BC146R BC146Y BC146G BC200 BC200R BC200Y BC200G BCW83 MT4102 MPS-A65 | |
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Contextual Info: 2N5099 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550 V(BR)CBO (V)800 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N5099 Freq50M | |
2N2222
Abstract: INA105 MAT03 OPA1013 OPA1013CN8 OPA1013CN8G4 OPA1013DN8 REF200 Burr-Brown IC free 4-20 n channel enhancement MOSFET
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OPA1013 4-20mA OPA1013 LM324-type 2N2222 INA105 MAT03 OPA1013CN8 OPA1013CN8G4 OPA1013DN8 REF200 Burr-Brown IC free 4-20 n channel enhancement MOSFET | |
LM324Contextual Info: OPA1013 Precision, Single-Supply DUAL OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● SINGLE POWER SUPPLY OPERATION INPUT VOLTAGE RANGE TO GROUND OUTPUT SWINGS NEAR GROUND LOW QUIESCENT CURRENT: 550µA max LOW VOS: 300µV max |
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OPA1013 4-20mA OPA1013 LM324-type LM324 | |
LM324Contextual Info: OPA1013 Precision, Single-Supply DUAL OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● SINGLE POWER SUPPLY OPERATION INPUT VOLTAGE RANGE TO GROUND OUTPUT SWINGS NEAR GROUND LOW QUIESCENT CURRENT: 550µA max LOW VOS: 300µV max |
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OPA1013 4-20mA OPA1013 LM324-type LM324 | |
2N2222
Abstract: INA105 MAT03 OPA1013 OPA1013CN8 OPA1013DN8 REF200 Burr-Brown IC free 4-20 SBOS005
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OPA1013 4-20mA OPA1013 LM324-type 2N2222 INA105 MAT03 OPA1013CN8 OPA1013DN8 REF200 Burr-Brown IC free 4-20 SBOS005 | |
LM324-type
Abstract: Burr-Brown IC free 4-20 opa1013 REF200 2N2222 INA105 MAT03 OPA1013CN8 OPA1013DN8 n channel enhancement mosfet
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OPA1013 4-20mA OPA1013 LM324-type 150mV INA105 REF200 Burr-Brown IC free 4-20 REF200 2N2222 INA105 MAT03 OPA1013CN8 OPA1013DN8 n channel enhancement mosfet | |
2N2222
Abstract: INA105 MAT03 OPA1013 OPA1013CN8 OPA1013DN8 REF200 Burr-Brown IC free 4-20
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OPA1013 4-20mA OPA1013 LM324-type 150mV INA105 REF200 2N2222 INA105 MAT03 OPA1013CN8 OPA1013DN8 REF200 Burr-Brown IC free 4-20 | |
design of a 4-20mA transmitter for a bridge type
Abstract: Lm324 comparator datasheet Lm324 window comparator datasheet 2N2222 INA105 MAT03 OPA1013 OPA1013CN8 OPA1013DN8 REF200
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OPA1013 4-20mA OPA1013 LM324-type design of a 4-20mA transmitter for a bridge type Lm324 comparator datasheet Lm324 window comparator datasheet 2N2222 INA105 MAT03 OPA1013CN8 OPA1013DN8 REF200 | |
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Contextual Info: OPA1013 Precision, Single-Supply DUAL OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● SINGLE POWER SUPPLY OPERATION INPUT VOLTAGE RANGE TO GROUND OUTPUT SWINGS NEAR GROUND LOW QUIESCENT CURRENT: 550µA max LOW VOS: 300µV max |
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OPA1013 4-20mA OPA1013 LM324-type | |
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Contextual Info: TK6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.25 (typ.) High forward transfer admittance: |Yfs| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) |
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TK6A55DA | |
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Contextual Info: TK4P55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK4P55D Switching Regulator Applications 1.08±0.2 (typ.) Low drain-source ON-resistance: RDS (ON) = 1.5 High forward transfer admittance: ⎪Yfs⎪ = 2.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) |
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TK4P55D 58MAX 01MAX 14MAX | |
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Contextual Info: TK13A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK13A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.32 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) |
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TK13A55DA | |
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Contextual Info: TK4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK4A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) |
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TK4A55DA | |
TK4A55DAContextual Info: TK4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 Ω(typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) |
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TK4A55DA TK4A55DA | |
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Contextual Info: TK13A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.32 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) |
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TK13A55DA | |
Burr-Brown IC free
Abstract: LM324-type ku 602 vc Burr-Brown IC free appendix B QPA1013CN8 Burr-Brown IC appendix d
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-548-61M 55nVp-p, 4-20mA OPA1013 LM324-type 17313b5 00E4840 200mV 100MA Burr-Brown IC free ku 602 vc Burr-Brown IC free appendix B QPA1013CN8 Burr-Brown IC appendix d | |
TK8A55DA
Abstract: k8a55da
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TK8A55DA TK8A55DA k8a55da | |
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Contextual Info: TK13A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.32 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) |
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TK13A55DA | |
TK4A55DA
Abstract: Hints
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TK4A55DA TK4A55DA Hints | |
K6A55DA
Abstract: TK6A55DA K6A5 TK6A
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TK6A55DA K6A55DA TK6A55DA K6A5 TK6A | |
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Contextual Info: TK10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) |
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TK10A55D | |