MAX 550 TRANSISTOR Search Results

MSP55

Contextual Info: MSP55 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550ã V(BR)CBO (V)550 I(C) Max. (A)350m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: Miniature Transistors TYPE NO. BC146 BC146R BC146Y BC146G BC200 N N N N BC200R BC200Y BC200G BCW83 CL151-4 P P P IC VCE VCE sat max IC rr min N.F. m ai f min max (mA) (V) (V) (mA) (MHz) (dB) (Hz) 20 20 20 20 20 SO 550 80 200 140 350 280 550 50 400 0.2 0.2

Contextual Info: 2N5099 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550 V(BR)CBO (V)800 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N2222

Abstract: INA105 MAT03 OPA1013 OPA1013CN8 OPA1013CN8G4 OPA1013DN8 REF200 Burr-Brown IC free 4-20 n channel enhancement MOSFET
Contextual Info: OPA1013 Precision, Single-Supply DUAL OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● SINGLE POWER SUPPLY OPERATION INPUT VOLTAGE RANGE TO GROUND OUTPUT SWINGS NEAR GROUND LOW QUIESCENT CURRENT: 550µA max LOW VOS: 300µV max

LM324

Contextual Info: OPA1013 Precision, Single-Supply DUAL OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● SINGLE POWER SUPPLY OPERATION INPUT VOLTAGE RANGE TO GROUND OUTPUT SWINGS NEAR GROUND LOW QUIESCENT CURRENT: 550µA max LOW VOS: 300µV max

LM324

Contextual Info: OPA1013 Precision, Single-Supply DUAL OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● SINGLE POWER SUPPLY OPERATION INPUT VOLTAGE RANGE TO GROUND OUTPUT SWINGS NEAR GROUND LOW QUIESCENT CURRENT: 550µA max LOW VOS: 300µV max

2N2222

Abstract: INA105 MAT03 OPA1013 OPA1013CN8 OPA1013DN8 REF200 Burr-Brown IC free 4-20 SBOS005
Contextual Info: OPA1013 Precision, Single-Supply DUAL OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● SINGLE POWER SUPPLY OPERATION INPUT VOLTAGE RANGE TO GROUND OUTPUT SWINGS NEAR GROUND LOW QUIESCENT CURRENT: 550µA max LOW VOS: 300µV max

2N2222

Abstract: INA105 MAT03 OPA1013 OPA1013CN8 OPA1013DN8 REF200 Burr-Brown IC free 4-20
Contextual Info: OPA1013 Precision, Single-Supply DUAL OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● SINGLE POWER SUPPLY OPERATION INPUT VOLTAGE RANGE TO GROUND OUTPUT SWINGS NEAR GROUND LOW QUIESCENT CURRENT: 550µA max LOW VOS: 300µV max

Contextual Info: OPA1013 Precision, Single-Supply DUAL OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● SINGLE POWER SUPPLY OPERATION INPUT VOLTAGE RANGE TO GROUND OUTPUT SWINGS NEAR GROUND LOW QUIESCENT CURRENT: 550µA max LOW VOS: 300µV max

Contextual Info: TK4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK4A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

TK4A55DA

Contextual Info: TK4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 Ω(typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

Burr-Brown IC free

Abstract: LM324-type ku 602 vc Burr-Brown IC free appendix B QPA1013CN8 Burr-Brown IC appendix d
Contextual Info: B U R R -B R O W N OPA1013 El AVAILABLE IN DIE APPLICATIONS • • • • • • • • • • • • • SINGLE POWER SUPPLY OPERATION INPUT VOLTAGE RANGE TO GROUND OUTPUT SWINGS NEAR GROUND LOW QUIESCENT CURRENT: 550^A max LOW Vpji 300 iV max LOW DRIFT: 2.5nV/°C max

K6A55DA

Abstract: TK6A55DA K6A5 TK6A
Contextual Info: TK6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.26 Ω (typ.) High forward transfer admittance: |Yfs| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

Contextual Info: TK10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

K10A5

Abstract: K10A55D
Contextual Info: TK10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

TK4A55D

Contextual Info: TK4A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A55D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.0 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 550 V)

TK9A55DA

Contextual Info: TK9A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK9A55DA Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.68 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.7 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

5R520P

Abstract: PG-TO-252-3-21 IPD50R520CP JESD22
Contextual Info: Type IPD50R520CP CoolMOSTM Power Transistor Product Summary Package • Lowest figure of merit RON x Qg • Ultra low gate charge VDS @Tjmax 550 V RDS on ,max 0.520 Ω 13 nC Qg,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant

Contextual Info: TK5A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK5A55D Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.4Ω(typ.) High forward transfer admittance: |Yfs| = 2.4 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

Contextual Info: CY7C199N 32 K x 8 Static RAM 32 K × 8 Static RAM Features Functional Description • High speed ❐ 15 ns ■ Fast tDOE ■ CMOS for optimum speed/power ■ Low active power ❐ 550 mW max, 15 ns “L” version ■ Low standby power ❐ 0.275 mW (max, “L” version)

5R399P

Abstract: IPD50R399CP JESD22 D49 transistor
Contextual Info: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge VDS @Tjmax 550 V RDS on ,max 0.399  17 nC Qg,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant

dvr schematic

Contextual Info: PRELIMINARY TECHNICAL DATA Preliminary Technical Data Ultra Precision Shunt-Mode Voltage Reference ADR520/525/530/540/545/550 FEATURES Ultra Compact SC70 and SOT23 Packages Temperature Coefficient: 25 ppm/؇C Max. Initial Accuracy: +0.2% Low Output Voltage Noise: 4 ␮V p-p

5R350P

Abstract: 5R350P transistor IPI50R350CP JESD22 f56a
Contextual Info: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.350 Ω 19 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant

5R399P

Abstract: IPA50R399CP JESD22 PG-TO220-3-31 D49 transistor
Contextual Info: IPA50R399CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.399 Ω 17 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant