MARKING ZI SOT Search Results

marking ZI

Abstract: marking ZI SOT KTN2369S
Contextual Info: SEMICONDUCTOR KTN2369S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking ZI No. 1 Item Marking Device Mark ZI KTN2369S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

marking ZI SOT

Abstract: VEBO-15V 2SC4366 Low frequency amplifier
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4366 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 Low Frequency amplifier. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

Contextual Info: • b b S a ' O l QQ24b5cl 72T « A P X N APIER P H I L I P S / D I S C R E T E BF570 b7E P 7 V SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic SOT-23 variant envelope, intended for use in large-signal handling i.f. pre­ amplifiers of TV receivers in combination with surface acoustic wave filters.

Contextual Info: CXE-1089Z CXE-1089Z 50MHz to 1200MHz 75Ω pHEMT MMIC LNA 50MHz to 1200MHz 75Ω pHEMT MMIC LNA Package: SOT-89 Product Description Features RFMD’s CXE-1089Z is a high performance 75Ω pHEMT MMIC low-noise amplifier utilizing a Darlington configuration with active bias. The active

em 223

Abstract: tic 223 GT2222A PZT2222A
Contextual Info: PZT2222A NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 SOT-223 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 1 2 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC)

Contextual Info: PZT2222A NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 * “G” Lead Pb -Free SOT-223 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 1 2 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

Contextual Info: PZT2222A NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 SOT-223 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 1 2 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC)

SOT-223 P1f

Abstract: Transistor p1f MARKING P1F on semiconductor p1f P1F transistor P1F NPN transistor p1f transistor pnp
Contextual Info: ON Semiconductort PZT2222AT1 NPN Silicon Planar Epitaxial Transistor ON Semiconductor Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount

DIODE A6

Abstract: Y6 ZENER DIODE BZXB4C10 sprague catalog BZX marking diode ZENER diode Y8 Y4 ZENER DIODE diode ZENER A8 diode ZENER Y6 marking A6 ZENER DIODE
Contextual Info: SPRflGUE DIODES « DIODES » DIODES « DIODES ♦ DIODES THE MARK OF RELIABILITY SERIES BAV and BAW MICROMINIATURE DIODES • • Series BAS, BAV, and BAW consists of standard European single and dual diode types. Devices are molded in a T 0 -2 6 3 A A high-profile or T O -2 3 6 AB (low-profile) package. These

Contextual Info: bb53T31 DOESSbT bfl4 « A P X N AUER PHILIPS/DISCRETE BSR13 BSR14 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli­ cations in thick and thin-film circuits.

BCD Semiconductor

Abstract: transistor 2808 voltage to bcd
Contextual Info: Preliminary Datasheet HIGH VOLTAGE NPN TRANSISTOR APT17 General Description Features The APT17 is high voltage, small signal NPN transistor. • Applications The APT17 is available in SOT-23 and TO-92 packages. SOT-23 High Collector-Emitter Voltage: 480V High Voltage and Low Standby Power Circuit for

FJX597J

Contextual Info: FJX597J FJX597J Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic 2 1 SOT-323 1. Drain 2. Source 3. Gate Si N-channel Junction FET

Contextual Info: FJX597J FJX597J Capacitor Microphone Applications 3 • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic 2 1 SOT-323 1. Base 2. Emitter 3. Collector Si N-channel Junction FET

transistor G1 SOT-23

Abstract: 1203 TO-92 625 SOT-23 8F sot23 NPN Transistor TO92
Contextual Info: Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 General Description Features The APT17 is high voltage, small signal NPN transistor. • Applications The APT17 is available in SOT-23 and TO-92 packages. SOT-23 High Collector-Emitter Voltage: 480V High Voltage and Low Standby Power Circuit for

Contextual Info: Product Brief High Sensitivity Micropower Omnipolar Hall-Effect Switch Description AH9248 Parametric Table The AH9248 is an ultra-sensitive Hall-effect switch with digital latched output, mainly designed for battery-operation, hand-held equipments. Supply Voltage V

AH9249NTR-G1

Abstract: marking GJ9
Contextual Info: Product Brief High Sensitivity Micropower Omnipolar Hall-Effect Switch Description AH9249 Parametric Table The AH9249 is an ultra-sensitive Hall-effect switch with digital latched output, mainly designed for battery-operation, hand-held equipments. Supply Voltage V

TRANSISTOR SMD CODE PACKAGE SOT323

Abstract: TRANSISTOR SMD MARKING CODES MARKING SMD PNP TRANSISTOR 2a PMST3904 PMST3906 pmst3906 transistor smd transistor MARKING 2A npn MARKING CODE SMD IC transistor sc-70 marking codes 1325 pnp
Contextual Info: PMST3906 40 V, 200 mA PNP switching transistor Rev. 05 — 29 April 2009 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a SOT323 SC-70 very small Surface-Mounted Device (SMD) plastic package. NPN complement: PMST3904.

Contextual Info: Product Brief AH922 UNIPOLAR HALL-EFFECT SWITCH Description Parametric Table The AH922 is a unipolar Hall-effect one-chip switch with digital output, solution for sense magnetic field. It is designed in mixed signal CMOS and chopper technology. This IC is quite

Contextual Info: PZT4403 40 V, 600 mA PNP switching transistor Rev. 03 — 2 March 2010 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a medium power SOT223 SC-73 small Surface-Mounted Device (SMD) plastic package. NPN complement: PZT4401.

ZT4403

Abstract: data sheet transistor PNP NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODES PZT4401 PZT4403 SC-73 MARKING CODE SMD IC
Contextual Info: PZT4403 40 V, 600 mA PNP switching transistor Rev. 03 — 2 March 2010 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a medium power SOT223 SC-73 small Surface-Mounted Device (SMD) plastic package. NPN complement: PZT4401.

LWE2015R

Abstract: SC15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LWE2015R NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor

e2b sot236

Abstract: marking G2B AP4305K AP4305KTR-E1 operational amplifier temperature control MARKING E2B SOT-23-6 marking G2B AP4305 AP4305KTR-G1 CA SOT 23-6
Contextual Info: Product Brief CONSTANT VOLTAGE AND CONSTANT CURRENT CONTROLLER Description The AP4305 is a highly integrated solution for a constant voltage/constant current mode SMPS application. The AP4305 contains one 1.21V voltage reference with ±0.5% accuracy, one current sensing circuit and two operational amplifiers. Combining the voltage reference with

Taiwan Semiconductor

Contextual Info: Data Sheet LINEAR HALL EFFECT IC AH49H General Description Features The AH49H is a small, versatile linear Hall-effect device that is operated by the magnetic field from a permanent magnet or an electromagnet. The output voltage is set by the supply voltage and varies in

Contextual Info: Product Brief HIGH SENSITIVITY CMOS HALL-EFFECT LATCH Description Parametric Table The AH921 is a Hall-effect latch designed in mixed signal CMOS technology. It is quite suitable for use in automotive, industrial and consumer applications. Superior high-temperature performance is made