MARKING YT Search Results

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

Contextual Info: T H I R DA N G L EP R O J E C T I O NI ALTERATION 1 SS U E ITEM CODE ECWF2W564JA 1 / 2W684JA 1 / 2W824JA { { 2Wl05JA { { 2W125JA { { 2W155JA 2W185JA { { 2W225JA { 2W275JA { { 2W335JA ( { 2W395JA 2W475JA { { ( { CAP DIMENSIONS VOLUME MARKING Note F T H

marking BSs sot23

Abstract: 82c80 marking code bss sot TL1040 marking BSs sot23 siemens
Contextual Info: SIEMENS PNP Silicon Switching Transistors BSS 80 BSS 82 • High DC current gain • Low coltector-emitter saturation voltage • Complementary types: BSS 79, BSS 81 NPN Type BSS BSS BSS BSS 80 80 82 82 B C B C Marking Ordering Code (tape and reel) PinC onfiguration

Contextual Info: 2SB1132 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SC-62) package • package marking: 2SB1132; B A *, where ★ is hFE code 2SB1132 (MPT3) . , +0.2 *•5—0.1 1.6±0.1 • Pc = 2 W (when mounted on 40 x 40 x 0.7 mm ceramic PCB)

Contextual Info: 10 MARKING SEE S H E ET NORMAL FORCE 0.60 yR|o.2o|y | (0.60 N 0.05 MIN (6 X A I © 0 .2 N MIN \ _ DETAIL2 0.6 CONTACT HEIGHT(MM) (M EASURE POSITION) CONTACT A R E A / 6* o O.i NORMAL FORCE CURVE © \C/ - © 10.00 * 0.10r © CARD INSERTION DIRECTION

ERE41-15

Abstract: T151 T810 T930
Contextual Info: ERE41-1 5 3A : Outline Drawings F A S T R E C O V E R Y DIODE Features : Marking D am per diode fo r high definition T V and high resolution display. H igh voltage by mesa design. •t i 'j - h*7-ÿ • «fSIHtt E4I- IK 01 ■« 1 10 H ig h re liab ility

Contextual Info: REFERENCE DATA KV 1 3 6 2 A - 1 S P E C I F I C A T I ON 9 8 ,8 ,- e TABLE OF CONTENTS 1. PURPOSE 2. TOKO PART NUMBER 3. APPLICATIONS 4. STRUCTURE 5. PACKAGE OUTLINE 6. PIN LAYOUT SIGNATURE DATE 7. PACKAGE OUTLINE DIM EN SIO N S/ Drawn By MARKING 8. ABSOLUTE MAXIMUM RATINGS

ERB83-004

Abstract: A342
Contextual Info: E R B 8 3 - 0 0 4 1 7 A '> 3 'yblr— ' V J T ÿ -f =t—F W J& '+ T i : Outline Drawings S C H O TTK Y BARRIER DIODE i Features • 1&VF Low V F i7j\ : Marking • X 4 '& > ? * ) : i - K t f A 5- n - K : 81 Color code : ^>u<- Super high speed switching.

YTS2222A

Abstract: YTS2222 YTS2221
Contextual Info: SILICON NPN EPITAXIAL TYPE YTS2222A FOR GENERAL PURPOSE USE AMPLIFIER APPLICATION. MIDIUM-SPEED SWITCHING AND AUDIO TO VHF AMPLIFIER APPLICATIONS. • • • • DC Current Gain Specified : 0.1~500mA Low Collector-Emitter Saturation Voltage : V cE sat = 1.0V(Max.) @Iq = 500mA, Ig = 50mA

YTS4123

Abstract: YTS4125
Contextual Info: YTS4123 SILICON NPN EPITAXIAL TYPE FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: • Low Leakage Current : I^gQ=50nA Max. IEBO=-’0nA (Max.) @ V q B=20V @ V e b =3V • Low Saturation Voltage : vCE(sat)=0-3v(Max-) @ Ic=50mA, IB=5mA

transistor marking MK

Abstract: YTS2222
Contextual Info: TOSHIBA TRANSISTOR YTS2907 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR HIGH-SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUITRY FEATURES: . High DC Current Gain Specified : -0.1~ -500mA . High Transition Frequency : @ Ic— 50mA, fx*200MHz(Min.)

Contextual Info: TOS H IB A DISCRETE/OPTO 45E TDTTESD D GGIT'HO TOSHIBA TRANSISTOR 2 «TOS4 YTS2222 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Z.cí - 3 FOR GENERAL PURPOSE USE Unit in mm MIDIUM-SPEED SWITCHING AND AUDIO TO +ÛS 2 .5 -a s VHF FREQUENCY APPLICATION + < 125

YTS4126

Abstract: YTS4124
Contextual Info: YTS4126 SILICON PNP EPITAXIAL TYPE Unit in mm FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER + 0.5 APPLICATIONS. FEATURES: • Low Leakage Current : Icj;o=-50nA Max. IEB0=_50nA(Max.) @ V q 3=-20V @ v EB=-3 v • Low Saturation Voltage : ^CE(sat)=_^ .4V(Max.)

YTS2222A

Abstract: transistor marking 1p Z
Contextual Info: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage

ICA10

Abstract: YTS2907A 150fps
Contextual Info: TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS YTS2907A FOR HIGH SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND +Q5 Z5-(X3 COMPLEMENTARY CIRCUITRY FEATURES: . High DC Current Gain Specified : -0.1— -500mA . High Transition Frequency

YTS4401

Abstract: MARKING e1v
Contextual Info: SILICON NPN EPITAXIAL TYPE YTS4401 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES : • Low Leakage Current : Ic]jv=100nA Max. , Iggy=-100nA (Max.) @ VCE=35V, V b e =-0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage

TRANSISTOR Marking XB PNP

Abstract: YTS3906
Contextual Info: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity

FSQS15A045

Abstract: 118T
Contextual Info: 15A 45V Tjw150V Fully Molded simitar to TO-220 FSQ S15A 045 tti* * Nihon Inter Electronics Corporation Specification -y h yT Schottky B arrier Diode Application H igh Frequency Rectification • I K Construction MAXIMUM RATINGS Ta=25°C: U nless otherw ise specified

Contextual Info: TOSHIBA DISCRETE/OPTO 45E D ÌQ'msa • TOSHIBA TRANSISTOR 0017=^7 S « T 0 S 4 - YTS2907A SILICON PNP EPITAXIAL TYPE (PCT PROCESS) FOR HIGH SPEED SWITCHING USE Unit in mm +QS Z 5-Q 3 +<Ï2 S DC TO VHF AMPLIFIER APPLICATIONS AND

YTS4400

Contextual Info: SILICON NPN EPITAXIAL TYPE YTS4400 U n i t in m m FOR G E N E R A L P U R POSE USE S W I T C H I N G A N D A M P L I F I E R * 0. 5 8 . 5 - 0. 3 APPLICATIONS. + 0.25 , 1 -5 - 0 1 5 FEATURES: EE • Low Leakage Current : I c E V = 1 0 0 tlJ' M a x - > lEj;y=-100nA (Max. )

YTS4403

Contextual Info: YTS4403 SILICON PNP EPITAXIAL TYPE U n i t in m m FOR GEN ERA L PURPOSE USE S WIT CHI NG AN D A MPL I F I E R +05 APPLICATIONS. FEATURES: •Low Leakage Current : IC E V = - 1 0 0 n A M a x . , Ig v = 1 0 0 n A ( M a x . ) @ V c e =-35V, V b e =0.4V • Excellent DC Current Gain Linearity

Nihon Inter Electronics

Abstract: 131T
Contextual Info: 4 A 6 5 V T j* 1 5 0 V '^ s ó b M k y 'B ^ m d e ' Fully Molded similar to TO -220A C FSHS04A065 Nihon Inter Electronics Corporation Specification. yT ¥ 4 Or- '> syh Construction fflìÉ H h m m m Application M c tv m Schottky Barrier Diode High Frequency Rectification

YTS2222

Contextual Info: TOSHIBA YTS2222 Transistor Unit in mm Silicon NPN Epitaxial Type + Q5 as-a3 For General Purpose Use + Q25 <n Medium-Speed Switching and Audio to w o ö d + 1 VHF Frequency Application Features • D C Current Gain Specified €E- - 0.1 - 500mA • Low Collector-Emitter Saturation Voltage