MARKING YF Search Results

marking YF

Abstract: YF 215 KRC826E
Contextual Info: SEMICONDUCTOR KRC826E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking YF 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark YF KRC826E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

marking YF

Abstract: YF 215 KRC826U
Contextual Info: SEMICONDUCTOR KRC826U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking YF 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark YF KRC826U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

Contextual Info: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

mps 1049

Abstract: JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23
Contextual Info: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS

transistor marking 3em

Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2
Contextual Info: MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS

a03409

Abstract: A9 SOT-23 A03409L SOT-23 marking A9 A9 SOT23 marking a9 Alpha Semiconductor marking YF sot-23 MARKING CODE A9 Alpha Products
Contextual Info: Document No. yf ALPHA & OMEGA Version Title SEMICONDUCTOR, LTD. SOT-23 PACKAGE MARKING DESCRIPTION Green product NOTE: P - Package and product type N - Last digital of product number W - Week code A - Assembly location code L&T - Assembly lot code PART NO. DESCRIPTION CODE PN

SUF620EF

Abstract: marking sot 5 pin
Contextual Info: SUF620EF Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • Low threshold voltage • Two STJ828 Chips in SOT-563F Package. Ordering Information Type NO. SUF620EF Marking

2SJ346

Abstract: 2SK1829
Contextual Info: 2SJ346 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ346 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5 to −1.5 V • High speed • Small package • Complementary to 2SK1829 Marking

marking c08

Abstract: CMLDM8002A CMLDM8002AJ MARKING CODE 24 TRANSISTOR
Contextual Info: Central CMLDM8002A CMLDM8002AJ SURFACE MOUNT PICOminiTM DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MARKING CODE: CMLDM8002A: C08 CMLDM8002AJ: CJ8 TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8002A and CMLDM8002AJ are dual chip Enhancement-mode

2SJ347

Abstract: 2SK1830
Contextual Info: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5 to −1.5 V • High speed • Small package • Complementary to 2SK1830 Marking

2SJ345

Abstract: 2SK1828
Contextual Info: 2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5 to −1.5 V • High speed • Small package • Complementary to 2SK1828 Marking

Contextual Info: 2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V • High speed • Small package • Complementary to 2SK1828 Marking Unit: mm

2SK1830

Contextual Info: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5~1.5 V • High speed • Enhancement-mode • Small package Marking

CAPACITOR MICROPHONE

Contextual Info: FJX597J FJX597J Capacitor Microphone Applications 3 • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic 2 1 SOT-323 Marking: SCH 1. Drain 2. Source 3. Gate Si N-channel Junction FET

Contextual Info: FJX597JH FJX597JH Capacitor Microphone Applications 3 • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic 2 1 SOT-323 Marking: SCH 1. Drain 2. Source 3. Gate Si N-channel Junction FET

Contextual Info: 2SK1828 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1828 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5~1.5 V • High speed • Enhancement-mode • Small package Marking

Contextual Info: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5~1.5 V • High speed • Enhancement-mode • Small package Marking

Contextual Info: 2SK1829 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5~1.5 V • High speed • Enhancement-mode • Small package Marking

2SK1826

Contextual Info: 2SK1826 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1826 High Speed Switching Applications Analog Switch Applications • 4 V gate drive • Low threshold voltage: Vth = 0.8~2.5 V • High speed • Enhancement-mode • Small package Marking

2SK1829

Contextual Info: 2SK1829 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5~1.5 V • High speed • Enhancement-mode • Small package Marking

2SK1827

Contextual Info: 2SK1827 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1827 High Speed Switching Applications Analog Switch Applications • 4 V gate drive • Low threshold voltage: Vth = 0.8~2.5 V • High speed • Enhancement-mode • Small package Marking

2SK1828

Contextual Info: 2SK1828 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1828 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5~1.5 V • High speed • Enhancement-mode • Small package Marking

Contextual Info: 2SK1826 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1826 High Speed Switching Applications Analog Switch Applications • 4 V gate drive • Low threshold voltage: Vth = 0.8~2.5 V • High speed • Enhancement-mode • Small package Marking