MARKING W4 NPN Search Results

Contextual Info: Transistors IC SMD Type General purpose Dual NPN Transistors FMW4 • Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=50mA 1 FMW4 2 3 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating

KRC158F

Abstract: parts equivalent KRC157F
Contextual Info: SEMICONDUCTOR KRC157F-KRC159F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SW IT C H IN G APPLICATION. INTERFA CE C IRCUIT A N D DRIVER CIR CUIT APPLICATION. FE A T U R E S • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

KTC812E

Contextual Info: SEMICONDUCTOR KTC812E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A High pairing property in hFE. 1 6 2 5 3 4 D The follwing characteristics are common for Q1, Q2. P SYMBOL RATING UNIT

KTC812U

Contextual Info: SEMICONDUCTOR KTC812U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. 1 6 2 5 3 4 DIM A A1 B A C High pairing property in hFE. A1 C Excellent temperature response between these 2 transistor.

Contextual Info: SEMICONDUCTOR KTC812U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. 1 6 2 5 3 4 DIM A A1 B A C High pairing property in hFE. A1 C Excellent temperature response between these 2 transistor.

MPSA42 equivalent

Abstract: MPSA43 equivalent MPSA92 equivalent ZTX320 equivalent ZTX542 equivalent ztx342 cd BZX88C BF493 ZTX541 equivalent ZTX327
Contextual Info: TABLE 10 : NPNiPNP HIGH FREQUENCY The devices shown in this table are designed for high frequency operation is such application areas as amplification, switching and oscillation. The transistors marked with f are particularly suitable for use in RF and Video IF stages of television re­

q1205

Contextual Info: SIEMENS PNP Silicon AF Transistor • • • • BC 369 High current gain High collector current lo w collector-emitter saturation voltage Complementary type: BC 368 NPN Type Marking Ordering Code BC 369 - C62702-C748 Pin Configuration 1 2 3 E C Package1)

Contextual Info: SEMICONDUCTOR KTC812E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A High pairing property in hFE. 1 6 2 5 3 4 D The follwing characteristics are common for Q1, Q2. P SYMBOL RATING UNIT

BSS63

Contextual Info: BEE D • Ô23b320 G G lb704 4 ■ S IP PNP Silicon AF and Switching Transistors BCX 42 BSS 63 SIEMENS/ SPCL-, SEMICONDS T - X 1 '0 7 For general AF applications High breakdown voltage Low collector-emltter saturation voltage Complementary types: BCX 41, BSS 64 NPN

SC74A

Abstract: transistor w10 SC-74A npn transistor w6 SC-88A marking W8 transistor transistor w10 18 FMG12 marking W10 DTC144EK
Contextual Info: D I G I TA L T R A N S I S T O R A R R AY S DUAL COUPLED NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,

2005A

Abstract: 2SC3000 J160 transistor marking JB
Contextual Info: Ordering number ; EN 86 6 C 2SC 3000 NPN Epitaxial P lanar Silicon Transistor HF Amp Applications Features . FBET series . High fT and small ere. Absolute H a x l m Ratings at Ta=2 5C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

Contextual Info: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4985FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications 1.0±0.05 0.1±0.05 2 5 3 4 0.48 Equivalent Circuit and Bias Resistor Values

RN4985FS

Contextual Info: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.

2SA1210

Abstract: 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor
Contextual Info: SA N YO SEMICONDUCTOR CORP 12 E D I T 2SA1210 1 - 3 l \ PN P / npn Epitaxial P la n a r S ilic o n Transistors 2009A 2SC2912 - Q 7 * ^ 7 Q7b Q003775 0 High Voltage Switching, A F 150W Predriver Applications 780C Features • Adoption of F B E T process • High breakdown voltage

Contextual Info: SANYO SEMICONDUCTOR ÍS E CORP ^ BU508D r j 7m 07\n r ' 3 S NPN Triple Diffused Planar Silicon Transistor 2022 Horizontal Output Applications Absolute Maxlaua Batinga at Ta=25°C Collector to Base Voltage vCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage

2SD1401

Abstract: 2042A 5033K
Contextual Info: SANYO SEMI CONDUCTOR CORP ÍSE D I 7 cH 7 a 7 b UDOSQflL, T' 33' 3 2SD1401 NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications 1268B Features: • High breakdown voltage and high reliability • High switching speed

PBHV8540T

Abstract: PBHV9040T IEC 62-50 code MARKING CODE SMD IC
Contextual Info: PBHV8540T 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 14 January 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

MARKING CODE SMD IC

Abstract: PBHV8540T PBHV9040T IEC 62-50 code SMD W4 Transistor SOT23 marking codes SOT23 NXP power dissipation TO-236AB NXP TRANSISTOR SMD MARKING CODE SOT23
Contextual Info: PBHV8540T 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 5 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

BFY52 equivalent

Abstract: ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N929 2N2369 equivalent BAW63
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device

RN4985FS

Contextual Info: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.

Contextual Info: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.

BFS36

Abstract: BS9365 marking W4 NPN 2N2475 BFS37 f025 MARKING BS 2N929 2N930 BAW63
Contextual Info: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

transistor w4

Abstract: BSS56 f007 AMPLIFIERS transistors for uhf oscillators 2N2475 f021 f025 ic marking z7 marking Z6 rf marking Y2
Contextual Info: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type

bcy79 equivalent

Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A