MARKING W1S SOT Search Results

VPS05604

Contextual Info: BAS 16S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2

BAS16S

Abstract: VPS05604 4C3 diode
Contextual Info: BAS16S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2

infineon marking W1s SOT23

Abstract: marking W1S sot23 infineon marking W1s transitor RF 98 BFT92 bft92 datasheet w1s sot23 30227 BFR92p application note marking code 10 sot23
Contextual Info: BFT92 PNP Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents up to 30 mA 2 3 • Complementary type: BFR92P NPN 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFT92 Marking W1s Pin Configuration

VPS05604

Abstract: CC140 marking 68 Marking w1s sot 1c36 sot-36
Contextual Info: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4 • For mixer applications in the VHF / UHF range 5 6 • For high-speed switching applications Tape loading orientation Top View 654 2 Marking on SOT-363 package for example W1s corresponds to pin 1 of device

30227

Abstract: IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23
Contextual Info: BFT 92 PNP Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz at collector currents up to 20 mA
Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92 W1s

BFT92

Abstract: 30227 infineon marking W1s marking W1S sot23 transistor Bft92 infineon marking W1s SOT23 W1S SOT23
Contextual Info: BFT92 PNP Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz at collector currents up to 20 mA
Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration

infineon marking W1s SOT23

Abstract: marking W1S sot23
Contextual Info: BFT92 PNP Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz at collector currents up to 20 mA
Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration

VPS05604

Contextual Info: %$7 6 6LOLFRQ 6FKRWWN\ 'LRGH $UUD\ 3UHOLPLQDU\ GDWD 4 • Low barrier diode for detectors up to GHz 5 6 frequencies 7DSH ORDGLQJ RULHQWDWLRQ Top View 654 2 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1

Contextual Info: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4 • For mixer applications in the VHF / UHF range 5 • For high-speed switching applications 6 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device

BAT62-08S

Abstract: VPS05604
Contextual Info: BAT62-08S Silicon Schottky Diode Array Preliminary data 4
Low barrier diode for detectors up to GHz 5 6 frequencies 2 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1 VPS05604

Contextual Info: BAT68-08S 4 Silicon Schottky Diode Array 5 6
For mixer application in the VHF/UHF range
For high-speed switching applications 2 3 1 VPS05604 Tape loading orientation Top View 6 5 4 Marking on SOT-363 package for example W1s corresponds to pin 1 of device

marking code 62 3 pin diode

Contextual Info: BAT 62-08S Silicon Schottky Diode Array Preliminary data 4 • Low barrier diode for detectors up to GHz 5 6 frequencies Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 2 1 3

BAT68-08S

Abstract: VPS05604 diode array MARKING A3
Contextual Info: BAT68-08S 4 Silicon Schottky Diode Array 5 6 Preliminary data
For mixer application in the VHF/UHF range
For high-speed switching applications 2 3 1 VPS05604 Tape loading orientation Top View 6 5 4 Marking on SOT-363 package for example W1s corresponds to pin 1 of device

Contextual Info: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4
For mixer applications in the VHF / UHF range 5 6
For high-speed switching applications Tape loading orientation Top View 654 2 Marking on SOT-363 package for example W1s corresponds to pin 1 of device

Transistor BFT 98

Abstract: Transistor BFR 900mhz 75167 BFt 65 infineon marking W1s RF NPN POWER TRANSISTOR C 10-12 GHZ 30227 Transistor BFT 10 GHz PNP transistor bft92w
Contextual Info: BFT 92W PNP Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz at collector currents up to 20 mA
Complementary type: BFR 92W NPN 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92W W1s

Marking w1s sot

Abstract: VPS05604 Device Marking A3 top marking c3 MARKING w1s sot363
Contextual Info: BAS 70-08S Silicon Schottky Diode Array
General-purpose diode for high-speed switching 4
Circuit protection 5 6
Voltage clamping
High-level detecting and mixing Tape loading orientation 2 Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device

h12e

Abstract: ic power 22E SMBT3904PN VPS05604 h11e h22e
Contextual Info: SMBT3904PN NPN/PNP Silicon Switching Transistor Array 4
High current gain 5 6
Low collector-emitter saturation voltage
Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 Tape loading orientation VPS05604 Marking on SOT-363 package

Contextual Info: SMBT3904PN NPN/PNP Silicon Switching Transistor Array 4
High current gain 5 6
Low collector-emitter saturation voltage
Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 Tape loading orientation VPS05604 Marking on SOT-363 package

H21E

Contextual Info: SMBT3904PN NPN/PNP Silicon Switching Transistor Array 4
High current gain 5 6
Low collector-emitter saturation voltage
Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 Tape loading orientation VPS05604 Marking on SOT-363 package

infineon marking W1s

Abstract: marking code w1s marking W1S Marking w1s sot
Contextual Info: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)

W1s transistor

Abstract: marking W1S BCR10PN VPS05604
Contextual Info: BCR10PN NPN/PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated NPN/PNP Transistors in one package
Built in bias resistor (R 1=10k, R2 =10k) 2 3 1 VPS05604 Tape loading orientation

Contextual Info: BCR 10PN NPN/PNP Silicon Digital Transistor Array 4 5
Switching circuit, inverter, interface circuit, 6 driver circuit
Two galvanic internal isolated NPN/PNP Transistors in one package
Built in bias resistor (R1=10k, R2 =10k) 2 3 1 VPS05604 Tape loading orientation

marking code w1s

Abstract: infineon marking W1s
Contextual Info: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)

Contextual Info: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)