MARKING TRANSISTOR BAS 16 Search Results

JP MARKING CODE SOT23-6

Abstract: marking transistor BAS 16 IC ax 2008 circuit diagram TIA-968 C2471 C2471LW1-T1 C2471LX2-TR13 C2471LX2-TR7 JESD22-A114 TIA-968-A
Contextual Info: C2471 Datasheet RDFC Controllers for Offline Applications up to 6 W ADVANTAGES •      Low system component count High average efficiency Low no load power consumption EMI compliance without extra components High isolation & surge voltage withstand

Cambridge capacitor capacitors

Abstract: JP MARKING CODE SOT23-6 sot23-6 CAMSEMI marking code 1dL Diode cambridge
Contextual Info: C2471 Datasheet RDFC Controllers for Offline Applications up to 6 W ADVANTAGES •      Low system component count High average efficiency Low no load power consumption EMI compliance without extra components High isolation & surge voltage withstand

JP MARKING CODE SOT23-6

Abstract: C2471PX2 C2471 C2471LX2-TR13 C2471LX2-TR7 JESD22-A114 TIA-968-A marking code 1dL Diode sot23-6 CAMSEMI 6W MARKING CODE SOT23
Contextual Info: C2471 Datasheet RDFC Controllers for Offline Applications up to 6 W ADVANTAGES •      Low system component count High average efficiency Low no load power consumption EMI compliance without extra components High isolation & surge voltage withstand

C2472PX2-TR7

Abstract: C2472PX2 C2472 C2473 JESD22-A114 sot23-6 CAMSEMI fa sot23-6 JP MARKING CODE SOT23-6
Contextual Info: C2472 and C2473 Datasheet RDFC Controllers for Offline Applications ADVANTAGES •      Low system component count High average efficiency Low standby power consumption EMI compliance without extra components High isolation & surge voltage withstand

C2472PX2-TR7

Abstract: C2472PX2 Cambridge capacitor capacitors sot23-6 marking code FA DS-1423-0709C C2474 ef 16 transformer ef 16 transformer C2472 camsemi sot23-6 AC/DC power supply
Contextual Info: C2472, C2473 and C2474 Datasheet RDFC Controllers for Offline Applications ADVANTAGES •      Low system component count High average efficiency Low standby power consumption EMI compliance without extra components High isolation & surge voltage withstand

sot23-6 marking code FA

Abstract: marking FAXX C2472PX2-TR13
Contextual Info: C2472 Datasheet RDFC Controller for Offline Applications ADVANTAGES • • • • • • Low system component count High average efficiency Low standby power consumption EMI compliance without extra components High isolation & surge voltage withstand High power density in very small size

Contextual Info: C2472 Datasheet RDFC Controller for Offline Applications ADVANTAGES • • • • • • Low system component count High average efficiency Low standby power consumption EMI compliance without extra components High isolation & surge voltage withstand High power density in very small size

JB marking transistor

Abstract: transistor marking JB MMBT5550 marking JB
Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT5550 14E D | 7*^4142 0007505 S. J NPN EPITAXIAL SILICON TRANSISTOR -HIGH VOLTAGE TRANSISTOR T-jq-R ' SOT.23 ~ ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic

Marking KJo SOT23

Abstract: 564 transistor MMBTA43 transistor 564 marking 564 sot23-6
Contextual Info: SAMSUNG SEMICONDUCTOR INC^ MMBTA43 14E D | 7=11,4142 00072^4 1 | NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Contextual Info: TOSHIBA 2SK2884 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE tt- M O S I 2SK2884 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER APPLICATIONS INDUSTRIAL APPLICATIONS TO-220FL Unit in mm • Low Drain-Source ON Resistance : Rd S(ON)= 1*9^ (Typ.)

TPC8204

Contextual Info: TOSHIBA TPC8204 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8204 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8. Low Drain-Source ON Resistance : RßS (ON) = 16

2-10P1B

Abstract: 2SK2844 marking POJ diode
Contextual Info: TOSHIBA 2SK2844 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2844 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm 4 V Gate Drive Low Drain-Source ON Resistance : R d S(ON) = 16

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1364 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1364 is a silicon PNP epitaxial type transistor. It designed with OUTLINE DRAWING high voltage, high collector current and high collector dissipation.

MMIC Amplifier Micro-X marking 420

Abstract: x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
Contextual Info: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and Space Qualified Devices 2 2.1 General 2 2.2 Silicon Devices 3 2.3 GaAs Devices

a10 transistor

Abstract: marking code 2f MMBT2907A sot 23 marking code NT MARKING NT SOT23
Contextual Info: MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate

Contextual Info: UTC 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. 1 FEATURES *Low Collector Saturation Voltage: VCE sat < -0.4V (Ic= -1.0A,IB=-100mA )

T6360

Contextual Info: SILICON TRANSISTOR 2SC3841 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC3841 is an NPN silicon epitaxial transistor intended fo r use as in m illim e te rs UHF oscillators and a UHF mixer in a tuner o f a TV receiver.

Contextual Info: SAMSUNG SEMI CONDUCTOR INC MMBT5550 14E D 17^4142 0007502 S .J NPN EPITAXIAL SILICON TRANSISTOR - ;— H IG H VOLTAGE TRANSISTO R ' T - a SOT.23 q - R ~ A BSO LUTE M A X IM U M RATINGS Ta= 2 5 ° C

uj01

Abstract: M33 TRANSISTOR
Contextual Info: DATA SHEET AdLib OCR Evaluation NEC SILICON TRANSISTOR ElICTION DEVICE GN1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 2.1±0.1 1.25±0.1 LO 1P C~ -14 M 0 0+1 96 Ln 2 _+ C14 0 Resistors Built-in TYPE

GaAs Amplifier Micro-X Marking k

Abstract: gaas fet micro-X Package marking GaAs Amplifier Micro-X BFY193 BFY40 CFY66 BFY420 BFY193 Microx Microwave Semiconductors transistor "micro-x" "marking" 3
Contextual Info: HiRel Discrete and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 Quality Specifications of HiRel Components

GaAs Amplifier Micro-X Marking k

Abstract: LNA ku-band Silicon Bipolar Transistor MICRO-X CLY30 CLY27 microwave fet IC gaas fet micro-X Package gaas fet micro-X Package marking SIEMENS MICROWAVE RADIO 8 GHz GaAs Amplifier Micro-X "Marking k"
Contextual Info: HiRel Discrete and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 Quality Specifications of HiRel Components

transistor Bf 966

Abstract: LM 3558 transistor k 3562 B1412-1 G28 marking code sot 23 BF966 mosfet bf 966 G28 SOT-23 transistor G28 k 3561 MOSFET
Contextual Info: TELEFUNKEN ELECTRONIC ¥ ilL ilF O *lK l electronic 61C D • S^Dmb '7 s 3 / - 2 - S T ' 00052b2 0 BIAL66 BF 9 6 6 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners

dk qw

Abstract: 2SB798
Contextual Info: UTC 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. 1 FEATURES *Low Collector Saturation Voltage: VCE sat < -0.4V (Ic= -1.0A,IB=-100mA )

TPC8007-H

Contextual Info: TO SH IBA TPC8007-H TENTATIVETOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH SPEED U-M OSII TPC8007-H LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS