MARKING TRANSISTOR BAS 16 Search Results

JP MARKING CODE SOT23-6

Abstract: marking transistor BAS 16 IC ax 2008 circuit diagram TIA-968 C2471 C2471LW1-T1 C2471LX2-TR13 C2471LX2-TR7 JESD22-A114 TIA-968-A
Contextual Info: C2471 Datasheet RDFC Controllers for Offline Applications up to 6 W ADVANTAGES •      Low system component count High average efficiency Low no load power consumption EMI compliance without extra components High isolation & surge voltage withstand

Cambridge capacitor capacitors

Abstract: JP MARKING CODE SOT23-6 sot23-6 CAMSEMI marking code 1dL Diode cambridge
Contextual Info: C2471 Datasheet RDFC Controllers for Offline Applications up to 6 W ADVANTAGES •      Low system component count High average efficiency Low no load power consumption EMI compliance without extra components High isolation & surge voltage withstand

C2472PX2-TR7

Abstract: C2472PX2 Cambridge capacitor capacitors sot23-6 marking code FA DS-1423-0709C C2474 ef 16 transformer ef 16 transformer C2472 camsemi sot23-6 AC/DC power supply
Contextual Info: C2472, C2473 and C2474 Datasheet RDFC Controllers for Offline Applications ADVANTAGES •      Low system component count High average efficiency Low standby power consumption EMI compliance without extra components High isolation & surge voltage withstand

sot23-6 marking code FA

Abstract: marking FAXX C2472PX2-TR13
Contextual Info: C2472 Datasheet RDFC Controller for Offline Applications ADVANTAGES • • • • • • Low system component count High average efficiency Low standby power consumption EMI compliance without extra components High isolation & surge voltage withstand High power density in very small size

Contextual Info: TOSHIBA 2SK2884 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE tt- M O S I 2SK2884 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER APPLICATIONS INDUSTRIAL APPLICATIONS TO-220FL Unit in mm • Low Drain-Source ON Resistance : Rd S(ON)= 1*9^ (Typ.)

TPC8204

Contextual Info: TOSHIBA TPC8204 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8204 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8. Low Drain-Source ON Resistance : RßS (ON) = 16

MMIC Amplifier Micro-X marking 420

Abstract: x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
Contextual Info: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and Space Qualified Devices 2 2.1 General 2 2.2 Silicon Devices 3 2.3 GaAs Devices

Contextual Info: UTC 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. 1 FEATURES *Low Collector Saturation Voltage: VCE sat < -0.4V (Ic= -1.0A,IB=-100mA )

Contextual Info: SAMSUNG SEMI CONDUCTOR INC MMBT5550 14E D 17^4142 0007502 S .J NPN EPITAXIAL SILICON TRANSISTOR - ;— H IG H VOLTAGE TRANSISTO R ' T - a SOT.23 q - R ~ A BSO LUTE M A X IM U M RATINGS Ta= 2 5 ° C

uj01

Abstract: M33 TRANSISTOR
Contextual Info: DATA SHEET AdLib OCR Evaluation NEC SILICON TRANSISTOR ElICTION DEVICE GN1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 2.1±0.1 1.25±0.1 LO 1P C~ -14 M 0 0+1 96 Ln 2 _+ C14 0 Resistors Built-in TYPE

transistor Bf 966

Abstract: LM 3558 transistor k 3562 B1412-1 G28 marking code sot 23 BF966 mosfet bf 966 G28 SOT-23 transistor G28 k 3561 MOSFET
Contextual Info: TELEFUNKEN ELECTRONIC ¥ ilL ilF O *lK l electronic 61C D • S^Dmb '7 s 3 / - 2 - S T ' 00052b2 0 BIAL66 BF 9 6 6 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners

TPC8401

Contextual Info: TOSHIBA TENTATIVE TPC8401 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N, P CHANNEL MOS TYPE U-MOSII TPC8401 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SOP-8 •

max 1786a

Abstract: 2SB1120 SANYO 1786A
Contextual Info: SANY O S E M I C O N D U C T O R CORP 22E 1> 7 cH 7 0 7 b OOD71bS 4 T-Z7-/3 2SB1120 % PNP Epitaxial Planar Silicon Transistor 2030 High-Current Driver Applications 1786A Applications . Strobes, voltage regulators, relay drivers, lamp drivers. Features . Low collector-to-emitter saturation volage VcE(sat max=_0,i, v ^

Contextual Info: . SANYO SEMICONDUCTOR CORP EEE D • 7^ 1707^ 2SD1628 0007241= 4 T - 3 5 -15 % 2038 N P N Epitaxial Planar Silicon Transistor High-Current Switching Applications 731A Applications . Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor

Contextual Info: SANYO SEMICONDUCTOR CORP E2E a0ükñ23 □ 7TT707la D T-3H1 2SC3771 # N PN Epitaxial Planar Silicon Transistor 2018A U/V OSC, M IX, High-Frequency General-Purpose Amp Applications 1944B Applications . UHF/VHF frequency converters, looal oscillators, HF amplifiers

2SK2835

Contextual Info: TOSHIBA 2SK2835 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2835 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm 8.0 APPLICATIONS Low Drain-Source ON Resistance : RßS (ON) = 0«56O (Typ.)

TPC8001

Contextual Info: TOSHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8001 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC • • • • Low Drain-Source ON Resistance : Rd S (ON)= 15mO (Typ.) High Forward Transfer Admittance: |Yfs| = llS (Typ.)

K2391

Abstract: 2SK2391
Contextual Info: TOSHIBA 2SK2391 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2391 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS r 10 ±0.3 4V Gate Drive Low Drain-Source ON Resistance : Rd S (ON)= 66mil (Typ.)

45mO

Abstract: 2SK2985
Contextual Info: TOSHIBA TENTATIVE 2SK2985 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U - M O S ÏÏ 2SK2985 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance : RßS (ON)= 4.5mO (Typ.)

2SK2992

Contextual Info: TOSHIBA 2SK2992 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2992 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance

tpc8102

Abstract: marking A3A
Contextual Info: TOSHIBA TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSVI T P C 8 1 02 INDUSTRIAL APPLICATIONS LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : Rd S (ON)= 34m il (Typ.) High Forward Transfer Adm ittance: |Yfs|= 9 S (Typ.)

2SK2381

Abstract: j5075
Contextual Info: T O S H IB A 2SK2381 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2381 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 10 ± 0.3

Contextual Info: T O SH IB A 2SK2963 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-MOS V 2SK2963 HIGH SPEED APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • « • INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive Low Drain-Source ON Resistance : Rd S (ON) = 0-5^ (Typ.)

k2699

Abstract: Toshiba K2699 2SK2699 SC-65 pulse te 735
Contextual Info: TO SH IBA 2SK2699 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2699 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 5 Q MAY •