MARKING STMICROELECTRONICS YEAR DIGIT Z Search Results

Contextual Info: STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 300 W min. with 20 dB gain @ 175 MHz • In compliance with the 2002/95/EC European

SD2933W

Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed

resistor 560 ohm

Abstract: SD2933
Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed

Contextual Info: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european

Bead 220 ohm 2.5A

Abstract: SD2931 SD2931-10 VK200 marking code transistor ND sd2931-10w
Contextual Info: SD2931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

sd2931-10w

Abstract: marking code oz 09-Sep-2004
Contextual Info: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

92196A146

Abstract: SD3933 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr
Contextual Info: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

McMaster-Carr

Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
Contextual Info: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

ZENER MARKING C8 ST

Abstract: CAPACITOR 64 680 4J diode t25 4 L5 SD2932 neosid RG316-25 vk200 ferrite bead SD2932W diode marking 100b
Contextual Info: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS

Contextual Info: VL6180X Proximity and ambient light sensing ALS module Datasheet - production data – Window and thresholding functions for both ranging and ALS Description The VL6180X is the latest product based on ST’s patented FlightSenseTM technology. This is a ground-breaking technology allowing absolute

vdfpn8

Abstract: VFQFPN8 M25P16 VDFPN8 M25P16 VDFPN SO16-300
Contextual Info: M25P16 16 Mbit, serial Flash memory, 75 MHz SPI bus interface Features • 16 Mbit of Flash memory ■ Page Program up to 256 bytes in 0.64 ms (typical) ■ Sector Erase (512 Kbit) in 0.6 s (typical) ■ Bulk Erase (16 Mbit) in 13 s (typical) ■ 2.7 V to 3.6 V single supply voltage

M25P16 VDFPN8

Abstract: MARKING code mf stmicroelectronics VDFPN 8x6 M25P16-V vdfpn8 VDFPN8 package SO8N M25P16 MARKING CODE A21 SO8
Contextual Info: M25P16 16 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface Features • 16 Mbit of Flash memory ■ Page Program up to 256 bytes in 0.64 ms (typical) ■ Sector Erase (512 Kbit) in 0.6 s (typical) ■ Bulk Erase (16 Mbit) in 17 s (typical)

M25P16 VDFPN8

Abstract: M25P16 A21 SO8
Contextual Info: M25P16 16 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface Features • 16 Mbit of Flash memory ■ Page Program up to 256 Bytes in 0.64ms (typical) ■ Sector Erase (512 Kbit) in 0.6s (typical) ■ Bulk Erase (16 Mbit) in 13s (typical)

VDFPN 8x6

Abstract: vdfpn8 VDFPN8 package M25P32
Contextual Info: M25P32 32-Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface Features • 32 Mbit of Flash memory ■ 2.7 V to 3.6 V single supply voltage ■ SPI bus compatible serial interface ■ 75 MHz clock rate maximum ■ VPP = 9 V for Fast Program/Erase mode

vl6180xv

Contextual Info: VL6180X Proximity and ambient light sensing ALS module Datasheet - production data • Two programmable GPIO – Window and thresholding functions for both ranging and ALS Description Features • Three-in-one smart optical module – Proximity sensor – Ambient Light Sensor

M25PE40

Abstract: Marking STMicroelectronics Single digit week SO8 Wide Package ai-135
Contextual Info: M25PE40 4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout Features • SPI bus compatible serial interface ■ 4 Mbit page-erasable Flash memory ■ Page size: 256 bytes – Page Write in 11 ms typical – Page Program in 0.8 ms (typical)

M25PE

Abstract: M25PE10 M25PE20 Ai329
Contextual Info: M25PE20 M25PE10 1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout Features • 1 or 2 Mbit of Page-Erasable Flash memory ■ 2.7 V to 3.6 V single supply voltage ■ SPI bus compatible serial interface

M25PE40

Contextual Info: M25PE40 4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout Features • SPI bus compatible serial interface ■ 4 Mbit Page-Erasable Flash memory ■ Page size: 256 bytes – Page Write in 11 ms typical

VDFPN8 package

Abstract: M25P32 A22are 3s80
Contextual Info: M25P32 32-Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface Features „ 32 Mbit of Flash memory „ 2.7 V to 3.6 V single supply voltage „ SPI bus compatible serial interface „ 75 MHz clock rate maximum VDFPN8 (ME) 8 x 6 mm (MLP8) „ VPP = 9 V for Fast Program/Erase mode

ST92F120 programmer

Abstract: 71872 st9 technical st92915 cse 2822
Contextual Info: ST9+ V6 Software Toolchain — gcc9, Libraries & Startup Files Reference Manual Release 6.1 March 2001 Ref: DOC-ST9V6-RG2 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN

OMRON CQM1 programming manual

Abstract: plc em 235 DIP switches settings CQM1-CPU41 Omron CQM1H-CPU21 dip switch setting omron CPM1-CIF01 rs 232 manual CQM1H-CPU51 switches cqm1
Contextual Info: Cat. No. V084-E1-01 NT11 Programmable Terminal USER’S MANUAL NT11 Programmable Terminal User’s Manual Produced January 2004 iv Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator and only for the purposes described in this manual.

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

LCD Iphone 3G

Abstract: cd player amplifier double ic 4440 hynix lpddr2 Amphenol Connectors CATALOG iphone camera module Hynix Semiconductor lpddr2 samsung lpddr2 samsung* lpddr2 Rockchip lcd touchscreen iphone 3g
Contextual Info: Industry News: Breaking News in the Industry and around the World MEMORY Interfaces WIRELESS COMMUNICATIONS: Ultra-wideband CONSUMER ELECTRONICS: HANDHELD GAMING DEVICES PORTABLE POWER: PARTITIONING for POWER Featured Product: Texas Instruments TMS320DM355