MARKING STMICROELECTRONICS YEAR DIGIT Z Search Results

MYS 99

Abstract: STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics date code format st marking code st MYS 99 stmicroelectronics assembly site date code format LOT code stmicroelectronics marking code stmicroelectronics
Contextual Info: AN926 Application note Brand traceability Introduction To ensure traceability to specific assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHAT products. STMicroelectronics is implementing a new marking and traceability scheme due to the sizes

Contextual Info: STAC2943 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ STAC air cavity packaging technology STAC package ■

STAC2933

Contextual Info: STAC2933 RF power transistor: HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package

Contextual Info: STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 300 W min. with 20 dB gain @ 175 MHz • In compliance with the 2002/95/EC European

transistor marking G9

Abstract: J4-81 j4 81 MARKING D8
Contextual Info: STAC3933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package

Contextual Info: SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175 W min. with 15 dB gain @ 175 MHz ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures

SD2933W

Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed

Contextual Info: SD2943 HF/VHF/UHF RF power N-channel MOSFETs Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures ■ Gold metallization ■ Excellent thermal stability

Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed

resistor 560 ohm

Abstract: SD2933
Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed

Contextual Info: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european

Bead 220 ohm 2.5A

Abstract: SD2931 SD2931-10 VK200 marking code transistor ND sd2931-10w
Contextual Info: SD2931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

Contextual Info: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

sd2931-10w

Abstract: marking code oz 09-Sep-2004
Contextual Info: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

92196A146

Abstract: SD3933 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr
Contextual Info: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

Contextual Info: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

McMaster-Carr

Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
Contextual Info: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

Contextual Info: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS

ZENER MARKING C8 ST

Abstract: CAPACITOR 64 680 4J diode t25 4 L5 SD2932 neosid RG316-25 vk200 ferrite bead SD2932W diode marking 100b
Contextual Info: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS

ECG transistor replacement guide book free

Abstract: ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673
Contextual Info: Component Data 24 one of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete devices would surely be formidable. Fortunately, amateurs tend to use a

MARKING CODE A21 SO8

Abstract: A21 SO8
Contextual Info: M25P16 16 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface Features • 16 Mbit of Flash memory ■ Page Program up to 256 bytes in 0.64 ms (typical) ■ Sector Erase (512 Kbit) in 0.6 s (typical) ■ Bulk Erase (16 Mbit) in 17 s (typical)

Contextual Info: VL6180X Proximity and ambient light sensing ALS module Datasheet - production data – Window and thresholding functions for both ranging and ALS Description The VL6180X is the latest product based on ST’s patented FlightSenseTM technology. This is a ground-breaking technology allowing absolute

Contextual Info: VL6180X Proximity and ambient light sensing ALS module Datasheet - production data – Window and thresholding functions for both ranging and ALS Description The VL6180X is the latest product based on ST’s patented FlightSenseTM technology. This is a ground-breaking technology allowing absolute

VDFPN8 package

Abstract: SO8N
Contextual Info: M25P16 16 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface Feature summary • 16Mbit of Flash memory ■ Page Program up to 256 Bytes in 0.64ms (typical) ■ Sector Erase (512 Kbit) in 0.6s (typical) ■ Bulk Erase (16Mbit) in 13s (typical)