MARKING S3 AMPLIFIER Search Results

WDFN-10L

Abstract: RT9026PFP RT9026 RT9026FP RT9026SP RT9026PQW S5 MARKING s3 86c DFN 3x3 PACKAGE MSOP-10
Contextual Info: RT9026 DDR Termination Regulator General Description Features RT9026 is a 3A sink/source tracking termination regulator. It is specifically designed for low-cost and low-external component count systems. The RT9026 possesses a high speed operating amplifier that provides fast load transient

Contextual Info: TO SH IBA MT3S07T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07T Unit in mm VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.2 ±0.05 0.8 ± 0.05 Low Noise Figure : NF = 1.5 dB V C E = 3V, IC = 5mA, f = 2 GHz High Gain : |S2le|2 = 9-5 dB

s142

Abstract: marking S1 amplifier ZPD11 XNONE marking S3 amplifier UL325 02A250
Contextual Info: Photoelectrics Amplifier Type S142C. • • • • • • • µ-Processor controlled Amplifier relay for photoelectric switches Automatic or manual emitter power regulation Multiplex system, master/slave 20 ms cycle Self-diagnostic functions Alignment help

RF AMPLIFIER marking S3

Contextual Info: SNA-386 Product Description DC-3 GHz, Cascadable GaAs MMIC Amplifier Sirenza Microdevices’ SNA-386 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surfacemountable plastic package. At 1950 MHz. this amplifier provides 20dB of gain when biased at 35mA.

SIRENZA MARKING

Abstract: mmic marking S3
Contextual Info: SNA-386 Product Description DC-3 GHz, Cascadable GaAs MMIC Amplifier Sirenza Microdevices’ SNA-386 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surfacemountable plastic package. At 1950 MHz. this amplifier provides 20dB of gain when biased at 35mA.

capacitor marking c106

Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

SMD r801

Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,

102433

Abstract: SNA-376
Contextual Info: SNA-376 Product Description Sirenza Microdevices’ SNA-376 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline package. This amplifier provides 22dB of gain when biased at 35mA and 4V. External DC decoupling capacitors determine low frequency

FMMT918

Abstract: marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23
Contextual Info: FERRANTI * semiconductors FMMT918 NPN Silicon Planar V H F /U H F Transistor DESCRIPTION This device is intended for low noise, high frequency amplifier and oscillator applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid

c102 TRANSISTOR

Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency

c102 TRANSISTOR

Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

MARKING e1v

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2884 Unit in AUDIO FREQUENCY AMPLIFIER APPLICATIONS. 1.6 MAX. 4.6 M A X . a4¿ao5., 1.7 M A X. FEATURES: . High DC Current Gain : hpE= 1 0 0 ~ 3 2 0 . Suitable for Output Stage of 1 Watts Amplifier . Pc= l ~ 2 W Mounted on Ceramic Substrate

BTD2444S3

Contextual Info: CYStech Electronics Corp. Spec. No. : C223S3-R Issued Date : 2005.06.29 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2444S3 Features • The BTD2444S3 is designed for general purpose low frequency power amplifier applications.

Contextual Info: User's Guide SBOU082A – December 2009 – Revised February 2010 PGA870EVM This user's guide describes the characteristics, operation, and use of the PGA870EVM, an evaluation fixture for the PGA870. The PGA870 is a wideband programmable gain amplifier PGA for high-speed

NF NPN Silicon Power transistor TO-3

Contextual Info: T O SH IB A 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5094 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF=1.8dB, |S2lel2 = 7.5dB f=2GHz +0.5 2.5-0.3 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SA812

Abstract: 2SC1623 MEI-1202 TC-5166 ic 926
Contextual Info: SILICON TRANSISTOR 2SA812 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters 2.8 ± 0.2 -8 Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. Vce = -6.0 V, Ic = -1 .0 mA

BTA1576S3

Abstract: BTC4081S3
Contextual Info: CYStech Electronics Corp. Spec. No. : C202S3 Issued Date : 2002.05.11 Revised Date : 2002.11.26 Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTC4081S3 Description • The BTC4081S3 is designed for using in driver stage of AF amplifier and general purpose

BTA1577S3

Abstract: BTC4097S3
Contextual Info: CYStech Electronics Corp. Spec. No. : C305S3 Issued Date : 2002.06.11 Revised Date : 2002.11.01 Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1577S3 Description • The BTA1577S3 is designed for use in driver stage of AF amplifier and general purpose

BTA1576S3

Abstract: BTC4081S3
Contextual Info: CYStech Electronics Corp. Spec. No. : C306S3 Issued Date : 2002.05.11 Revised Date : 2002.11.26 Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1576S3 Description • The BTA1576S3 is designed for using in driver stage of AF amplifier and general purpose

BTN2222AS3

Abstract: BTP2907AS3
Contextual Info: CYStech Electronics Corp. Spec. No. : C317S3-H Issued Date : 2003.04.11 Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP2907AS3 Description • The BTP2907AS3 is designed for general purpose amplifier applications. It is housed in the

MARKING LP SOT-323

Abstract: BTN2222AS3 BTP2907AS3
Contextual Info: CYStech Electronics Corp. Spec. No. : C227S3 Issued Date : 2003.04.11 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN2222AS3 Description • The BTN2222AS3 is designed for general purpose amplifier applications. It is housed in the

BTA1577S3

Abstract: BTC4097S3
Contextual Info: CYStech Electronics Corp. Spec. No. : C203S3 Issued Date : 2002.05.11 Revised Date : 2002.11.01 Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTC4097S3 Description • The BTC4097S3 is designed for use in driver stage of AF amplifier and general purpose

Contextual Info: REVISIONS LTR DESCRIPTION DATE Prepared in accordance with ASME Y14.24 APPROVED Vendor item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGE PMIC N/A 1 2 3 4 5 6 7 8 9 PREPARED BY CHECKED BY APPROVED BY Thomas M. Hess SIZE A REV AMSC N/A 12 TITLE Phu H. Nguyen

G2997

Abstract: G2997F6U fd 715 marking S3 amplifier stb 236 G2997P7U MSOP-10 EA2500 325BJ
Contextual Info: G2997 Global Mixed-mode Technology Inc. DDR Termination Regulator Features „ „ „ „ „ „ „ „ „ „ „ „ „ General Description Support Both DDR I 1.25VTT and DDR II (0.9 VTT) Requirements Input Voltage Range: 3.3V to 5.5V VLDOIN Voltage Range: 1.2V to 3.6V