MARKING RK SOT Search Results

m6g marking code

Abstract: m6g transistors marking code m6g marking sot23
Contextual Info: MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors http://onsemi.com N−Channel Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  SOT−23 CASE 318 STYLE 10

L2N7002EM3T5G

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002EM3T5G S-L2N7002EM3T5G N–Channel SOT–723 3 • Pb−Free Package is Available. • ESD Protected:2000V • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

FMBG16

Abstract: MARKING RK fmbg19l FMB-G24H SFPJ-73
Contextual Info: Schottky Barrier Diodes 4-4 4-4-1 1 Chip VRM IO VF IR V (A) (V) (mA) SFPA-53 0.36 1.5 Surface mount (SFP) 2 SFPB-56 EA 03 0.36 1.5 Axial(E0) 5 AK 06 MI2A3* 0.39 2.0 Surface mount (Compact) 1 0.45 1.0 Surface mount (SFP) MI1A3 0.47 1.0 AK 03 0.55 EK 03 Part No.

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 380 mAmps, 60 Volts L2N7002KLT1G S-L2N7002KLT1G N–Channel SOT–23 3 Features • • • • • ESD Protected Low RDS on Surface Mount Package This is a Pb−Free Device • S- Prefix for Automotive and Other Applications Requiring

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 380 mAmps, 60 Volts L2N7002KLT1G S-L2N7002KLT1G N–Channel SOT–23 3 Features • • • • • • ESD Protected Low RDS on Surface Mount Package This is a Pb−Free Device 1 2 We declare that the material of product are Halogen Free and

marking 6k sot-23 package

Abstract: MARKING RK marking RK sot MMBF4392
Contextual Info: MMBF4391LT1, MMBF4392LT1, MMBF4393LT1 JFET Switching Transistors N−Channel http://onsemi.com Features 2 SOURCE • Pb−Free Packages are Available 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG

IMBT4403

Abstract: IMBT4401 IMBT2222 6u sot-23 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A IMBT3903
Contextual Info: DIODES INC 32E » • 20407^3 00003b3 S H D I I SURFACE M O U N T TRA N SISTO RS -r^-oo, NPN T R A N S IS T O R S -T O -2 3 6 SOT-23 PACKAGE 310 mW DISSIPATION RATING (See Note 4) Type N u m b er M a rk in g Code IMBT3903 IMBT3904 IMBT4400 IMBT4401 IMBT2222

marking 6k sot-23 package

Abstract: MMBF4391 MMBF4391LT1 MMBF4391LT1G MMBF4392 MMBF4392LT1 MMBF4392LT1G MMBF4393LT1 MMBF4393LT1G SOT-23 6K
Contextual Info: MMBF4391LT1, MMBF4392LT1, MMBF4393LT1 JFET Switching Transistors N−Channel http://onsemi.com Features 2 SOURCE • Pb−Free Packages are Available 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG

MMBF4391

Abstract: MMBF4391LT1 MMBF4391LT1G MMBF4392 MMBF4392LT1 MMBF4393 MMBF4393LT1 MMBF4393LT1G
Contextual Info: MMBF4391LT1, MMBF4392LT1, MMBF4393LT1 JFET Switching Transistors N−Channel http://onsemi.com Features 2 SOURCE • Pb−Free Packages are Available 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG

MMBF4393LT1G

Abstract: MMBF4391 MMBF4392 RK 69 MMBF4391LT1 MMBF4391LT1G MMBF4392LT1 MMBF4392LT1G MMBF4393LT1
Contextual Info: MMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors N−Channel http://onsemi.com Features 2 SOURCE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage

m6g transistors marking code

Abstract: m6g marking code m6g marking sot23 SMMBF4391LT1G marking 6j M6G sot 23 marking code m6g m6g sot23 marking m6g MMBF4393
Contextual Info: MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors http://onsemi.com N−Channel 3 Features 1 • S Prefix for Automotive and Other Applications Requiring Unique • 2 Site and Control Change Requirements; AEC−Q101 Qualified and

marking code m6g

Abstract: m6g transistors marking code M6G sot 23 m6g marking code M6G MARKING MMBF4391 MMBF4391LT1 MMBF4391LT1G MMBF4392 MMBF4392LT1
Contextual Info: MMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors N−Channel http://onsemi.com Features 2 SOURCE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage

diode smd marking SD

Abstract: SMD kl7 QW-BA015 smd schottky diode sot363 marking KLB smd marking rl SMD PI SMD 24 oe G marking CDBV6-54AD-G
Contextual Info: c o A tc m r SMD Schottky Barrier Diode Arrays S M D D io d e s S p e c ia lis t CDBV6-54T/AD/CD/SD/BR-G Forward Current: 0.2A Reverse Voltage: 30V RoHS Device Features SOT-363 - L o w f o r w a r d v o l t a g e d ro p. -Fast switching. -Ultra-small surface mount package.

Contextual Info: MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors http://onsemi.com N−Channel 3 Features 1 • S Prefix for Automotive and Other Applications Requiring Unique • 2 Site and Control Change Requirements; AEC−Q101 Qualified and

MMBD301

Abstract: BV SMD marking 4T sot-23
Contextual Info: Diodes SMD Type Schottky Barrier Diode MMBD301 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5

B 2306 BARRIER RECTIFIER

Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

u92 surface mount u92 transistor

Abstract: t2406 MOTOROLA
Contextual Info: Order this data sheet by MMFT2406T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor M M FT2406T1 N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high

MMBF4391

Abstract: MMBF4391LT1 MMBF4392 MMBF4392LT1 MMBF4393 MMBF4393LT1
Contextual Info: MMBF4391LT1, MMBF4392LT1, MMBF4393LT1 JFET Switching Transistors N−Channel http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage VGS 30 Vdc Forward Gate Current

SMV1237

Abstract: SMV1247
Contextual Info: GaAs RFICs and Modules Varactor Diodes Hyperabrupt Diodes Continued / a ! IT— P H h Single SOT-23 / a \ y Common Cathode SOT-23 Èl H Common Anode SOT-23 II x\ Common Cathode SC-70 rr —w— r T1 H Common Anode SC-70 Single SC-79 ♦ SMV1232-011 ♦ SMV1232-079

Contextual Info: Product specification MMBD1201;MMBD1203 MMBD1204;MMBD1205 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5

smd diode 27 E

Abstract: 660 tg diode smd marking rs Diode SOT-23 marking 27 smd transistor marking 26 MMBD1201 MMBD1204 mmbd1201 datasheet MMBD1203 MMBD1205
Contextual Info: Diodes SMD Type High Conductance Ultra Fast Diode MMBD1201;MMBD1203 MMBD1204;MMBD1205 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

Contextual Info: TfiJH H E W L E T T WL'eM PA C K A R D Surface Mount RF PIN Diodes in SOT-363 SC-70, 6 Lead Technical Data HSMP-386L HSMP 389L/R/T/U/V Features • Unique configurations in surface mount SOT-363 package - Add flexibility - Save board space - Reduce cost

MARKING tAN SOT-23

Abstract: sot-23 marking code pe L630 IRLML2402 YW marking marking yw
Contextual Info: IRLML2402 Package Outline HEXFET MICRO3 SOT-23 Outline Dimensions are shown in millimeters (inches) D - B - 3 E -A - L E A D A S S IG N M E N TS 1 - G A TE 2 - S O U R CE 3 - D R A IN 3 3 D IM A H 1 0 . 20 ( .0 0 8 ) 2 M A M e e1 θ A -C B 0. 1 0 (.0 0 4 )