MARKING RH TRANSISTOR Search Results

Transistor BFR 67

Contextual Info: BFR 183 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, high gain broadband amplifiers. Features D Low noise figure D High power gain 1 2 3 94 9280 Marking: RH Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter

D1626

Abstract: 2SB1126
Contextual Info: O rd e rin g n u m b e r: EN 1721A No.1721A S A \Y O J 2SB1126/2SD1626 PNP/NPN Epitaxial Planar Silicon Transistors For Various Drivers Applications . Relay drivers, hammer drivers, lamp drivers, motor drivers. Features . High DC current gain 4000 or greater .

TO 92 leadframe

Contextual Info: Data Sheet LEADFRAME TO-92 Test Services ● Program generation/conversion ● Wafer probe ● Burn-in ● -55°C to +165°C test available ● Strip test available Transistor Outline TO-92 TO-92 is a leadframe based, plastic encapsulated package that is well suited for applications requiring optimum

4.7 20V

Abstract: 1D104
Contextual Info: SS-212 R1 Chip Tantalum Solid Electrolytic Capacitor Type TMU CERTIFIED 1. General 1-1 Scope of Application This document applies to miniaturized chip tantalum solid electrolytic capacitors for applications in transistorized circuits of electronic devices.

2SC4738

Abstract: 2SA1832
Contextual Info: TO SH IBA 2SC4738 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • • High Voltage and High Current : V0EO-5OV, 10 = 150mA (Max.) Excellent hjpg Linearity

Contextual Info: Transistors IC SMD Type Product specification 2SC3357 Features Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz

smd rf transistor marking

Abstract: 2SC3357 SMD smd transistor marking RE transistor 2SC3357 10 ghz transistor smd transistor marking GA RE smd 2SC3357 RF TRANSISTOR 10 GHZ low noise marking rh transistor
Contextual Info: IC Transistors SMD Type NPN Silicon RF Transistor 2SC3357 Features Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz

Contextual Info: TO SH IBA 2SK1875 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 875 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS 2.1 ± 0.1 AM HIGH FREQUENCY AMPLIFIER APPLICATIONS 1.25 ± 0.1 AUDIO FREQUENCY AMPLIFIER APPLICATIONS • • 3-

Contextual Info: TOSHIBA SSM3J05FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J05FU Unit in mm POWER MANAGEMENT SWITCH HIGH SPEED SWITCHING APPLICATIONS 2.1 ± 0.1 • • • Small Package Low on Resistance 1.2510.1 : Ron = 3.3 Cl Max. @VQg : Ron = 4.0 O Max. (@VGS

3SK274

Contextual Info: TO SH IBA 3SK274 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK274 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2.1 ± 0. 1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Gatel-Drain Voltage Gate2-Drain Voltage Gatel-Source Voltage

2SK2145

Contextual Info: TO SH IBA 2SK2145 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 2 1 45 Unit in mm AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. + 0.2 • . • • • Including Two Devices in SM5 Super Mini Type with 5 Leads. High |Yfc| : |Yfc| = 15mS (Typ.) at VDS = 10V, VGS = 0

2SD1618

Abstract: 2SB1118 PF140S
Contextual Info: Ordering num ber:EN 1784B 2SB1118/2SD1618 N0.1784B PNP/NPN Epitaxial Planar Silicon Transistors Low-Voltage, High-Current Amp, Muting Applications Features . Low collector-to-emitter saturation voltage. . Very small size making it easy to provide high-density,

2sj511

Contextual Info: TOSHIBA 2SJ511 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ511 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1.6MAX. -*J-*

2SC2715

Contextual Info: 2SC2715 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • High Power Gain : Gpe = 2dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage. + 0.5

EN6029

Abstract: photoreflector SPI-335-34
Contextual Info: Ordering number : EN6029 Infrared LED SPI-335-34 SPI-335-34 Ultraminiature photoreflector single-transistor type Features • Infrared LED plus Phototransistor (single) • DIP type • Compact type : 3.4 (L) ✕ 2.7 (W) ✕ 1.5 (H) mm • Visible light cut type

2SJ511

Abstract: marking zf 2I k
Contextual Info: TOSHIBA 2SJ511 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt- M O S V 2SJ511 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1.6MAX.

2SC3122

Contextual Info: TO SH IBA 2SC3122 2 S C 3 1 22 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV VHF RF AMPLIFIER APPLICATIONS • • • High Gain : Gpe = 24dB Typ. (f=200MHz) Low Noise : NF = 2.0dB (Typ.) (f=200MHz) Excellent Forward AGC Characteristics

EN6029

Abstract: SPI-335-34 26M4 L35mm
Contextual Info: Ordering number : EN6029 Infrared LED SPI-335-34 SPI-335-34 Ultraminiature photoreflector single-transistor type Features • Infrared LED plus Phototransistor (single) • DIP type • Compact type : 3.4 (L) ✕ 2.7 (W) ✕ 1.5 (H) mm • Visible light cut type

Contextual Info: Data Sheet LEADFRAME SOT-223 Test Services ● Program generation/conversion ● Wafer probe ● Burn-in ● -55°C to +165°C test available ● Strip test available Small Outline Transistor SOT-223 SOT-223 is a leadframe based, plastic encapsulated package

Contextual Info: T O S H IB A RN2961 ~RN2966 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2961, RN2962, RN2963, RN2964, RN2965, RN2966 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. 2.1 ±0.1 I- *1 1 .2 5 ÍÜ .1

tpc8102

Abstract: marking A3A
Contextual Info: TOSHIBA TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSVI T P C 8 1 02 INDUSTRIAL APPLICATIONS LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : Rd S (ON)= 34m il (Typ.) High Forward Transfer Adm ittance: |Yfs|= 9 S (Typ.)

TPC8201

Contextual Info: TOSHIBA TPC8201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8201 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS Low Drain-Source ON Resistance : R ßS (ON)= 37mO (Typ.) High Forward Transfer Admittance: |Yfs | = 6S (Typ.)

k2915

Abstract: 2SK2915 SC-65
Contextual Info: TOSHIBA 2SK2915 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2915 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5.9 MAX. 03.2 ±0.2

2SK2398

Abstract: SC-65 transistor N100
Contextual Info: TOSHIBA 2SK2398 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2398 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5.9 M A X. • • • • 03.2 ±0.2