MARKING RF 98 Search Results

Transistor BFT 98

Abstract: BFT98 BFT98B rf amplifier siemens 10 ghz
Contextual Info: SIEM ENS BFT 98 BFT98B NPN Silicon RF Transistors • For low-distortion broadband amplifier output stages up to 1 GHz at collector currents up to 150 mA. • With integrated emitter stabilizing resistors. Type Marking Ordering Code BFT 98 BFT 98 Q62702-F523

marking N50 RF mmic

Abstract: HP MMIC INA INA-50311 INA-50311-BLK INA-50311-TR1 MMIC marking code 132
Contextual Info: 1 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-50311 Features • Internally Biased, Single 5 V Supply 17 mA • 19 dB Gain • 3.6 dB NF • Unconditionally Stable SOT-143 Surface Mount Package Description Pin Connections and Package Marking

Contextual Info: CC2595 SWRS090A – SEPTEMBER 2010 – REVISED MARCH 2011 www.ti.com 2.4-GHz RF FRONT END Check for Samples: CC2595 FEATURES • 1 • • • Low Cost and Small Package Very Few External Components 2.0-V to 3.6-V Operation • • • Less Than 1- A Current Consumption in

Contextual Info: * %1 T e x a s LMV881 In s t r u m e n t s 23 MHz Low Power CMOS EMI Hardened Operational Am plifier with 1,8V Logic Shutdown General Description Features The LMV881 is a low power CMOS input operational amplifier that provides low input bias currents, a rail to rail output with

mw4ic915nb

Abstract: AN1977 AN1987 MW4IC915GNBR1 MW4IC915NBR1 A113 AN1955 ic marking z7 GM 950 motorola
Contextual Info: Freescale Semiconductor Technical Data MW4IC915N Rev. 7, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage

Contextual Info: MGA-13216 High Gain, High Linearity, Very Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-13216 is a two stage, easy-touse GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise with good input return loss and high linearity

Contextual Info: LMV881 www.ti.com SNOSC62B – JANUARY 2012 – REVISED MAY 2013 LMV881 23 MHz Low Power CMOS EMI Hardened Operational Amplifier with 1.8V Logic Shutdown Check for Samples: LMV881 FEATURES APPLICATIONS • • • • 1 2 • • • • • • • • •

7M9106

Abstract: TQP7M9106 L4024 dap sot 23-5 06035J2R4ABSTR PFB10
Contextual Info: TQP7M9106 2W High Linearity Amplifier Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package GND/NC GND/NC GND/NC 19 20 GND/NC 21 22 GND/NC 5 14 6 13 General Description Pin Configuration

Motorola 680

Abstract: Case 449-02 Motorola transistor 358 TRANSISTOR Z4 marking Z4 marking Z6 MRF9822T1 transistor 9822 nippon ferrite vk200 ferrite bead
Contextual Info: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT

RF POWER marking 556

Abstract: motorola 6135 transistor motorola 351 MRFIC0916
Contextual Info: MOTOROLA Order this document by MRFIC0916/D SEMICONDUCTOR TECHNICAL DATA The MRFIC Line General Purpose RF Cascode Amplifier MRFIC0916 The MRFIC0916 is a cost–effective, high isolation cascode silicon monolithic amplifier in the industry standard SOT–143 surface mount package designed for general purpose RF applications. On chip bias circuitry sets the

RD60HUF1-101

Abstract: Rf power transistor mosfet UHF transistor FET 100OHM RD60HUF1 PINw10 transistor A 1568 mitsubishi 250
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.

ECP100

Abstract: AH215-S8G AH215 AH215-S8 AH215-S8PCB1960 AH215-S8PCB2140 AH215-S8PCB900 ECP100G
Contextual Info: AH215 / ECP100G 1 Watt, High Gain HBT Amplifier Product Features Product Information Product Description • 400 – 2300 MHz • +31.5 dBm P1dB • +46 dBm Output IP3 • 18 dB Gain @ 900 MHz • Single Positive Supply +5 V • Lead-free/green/RoHS-compliant

Hitachi DSA00174

Contextual Info: BIC703C Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-985C Z 4th. Edition Dec. 2000 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz)

MGA-634P8-BLKG

Abstract: mga633p8 MCR01MZS
Contextual Info: MGA-634P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-634P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of

OPA2686

Contextual Info: OPA2822 OPA 282 2 SBOS188E – MARCH 2001 – REVISED AUGUST 2008 www.ti.com Dual, Wideband, Low-Noise Operational Amplifier FEATURES ● ● ● ● ● ● DESCRIPTION LOW INPUT NOISE VOLTAGE: 2.0nV/√Hz HIGH UNITY GAIN BANDWIDTH: 500MHz HIGH GAIN BANDWIDTH PRODUCT: 240MHz

trimmer cap

Abstract: UHF 8 Watt 8 Watt NPN surface mount power transistor arco mica trimmer erie ceramic mrf4427 MOTOROLA 1N4148 1N914 MRF3866 MRF4427 MRF4427R2
Contextual Info: MOTOROLA Order this document by MRF4427/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor MRF4427R2 Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount components. Suitable for

38PIN

Contextual Info: SN761677 www.ti.com SLES066A – DECEMBER 2002 TV/VCR TUNER IC WITH DC/DC CONVERTER FEATURES D Single Chip Mixer/Oscillator, Synthesizer, and DA PACKAGE TOP VIEW 38-PIN TSSOP (DA) 30-V DC/DC Converter for Tuning Amplifier D D D D D VHF-L, VHF-H, UHF 3-Band Local Oscillator

Contextual Info: WJA1035 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • • Cascadable gain block 50 – 4000 MHz 15 dB Gain @ 1.9GHz +16.5 dBm P1dB @ 1.9GHz +35 dBm OIP3 @ 1.9GHz Operates from +5V @ 65mA • • • • Wireless Infrastructure

Contextual Info: WJA1030 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • • Cascadable gain block 50 – 4000 MHz 15 dB Gain @ 1.9GHz +18 dBm P1dB @ 1.9GHz +37 dBm OIP3 @ 1.9GHz Operates from +5V @ 80mA • • • • Wireless Infrastructure

plc496

Contextual Info: 05109 PLC496 Only One Name Means ProTek’Tion 500 WATT ultra low capacitance tvs array Description The PLC496 is an ultra low capacitance TVS array that provides two lines of protection. This device protects high-frequency applications such as voice and data related systems and is designed to minimize the effects of high overshoot

Contextual Info: DGN−8 DGK−8 D−8 THS4502 THS4503 www.ti.com SLOS352D − APRIL 2002 − REVISED JANUARY 2004 WIDEBAND, LOW-DISTORTION FULLY DIFFERENTIAL AMPLIFIERS FEATURES D D D D D D D APPLICATIONS D High Linearity Analog-to-Digital Converter Fully Differential Architecture

Contextual Info: AG303-63 InGaP HBT Gain Block Product Description Product Features • • • • • • • • DC – 6000 MHz 20.5 dB Gain @ 900 MHz +14 dBm P1dB @ 900 MHz +26 dBm OIP3 @ 900 MHz Single Voltage Supply Internally matched to 50 Ω Robust 1000V ESD, Class 1C

Contextual Info: CC1120 www.ti.com SWRS112E – JUNE 2011 – REVISED OCTOBER 2013 High-Performance RF Transceiver for Narrowband Systems Check for Samples: CC1120 1 Introduction 1.1 Features • High-Performance, Single-Chip Transceiver – Adjacent Channel Selectivity: 64 dB at

RA20H8087M

Abstract: RA20H8087M-101 20W power transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to